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FQP8P10

FQP8P10
Mfr. #:
FQP8P10
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 100V P-Channel QFET
生命週期:
製造商新產品
數據表:
FQP8P10 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220-3
通道數：
1 Channel
晶體管極性：
P-通道
Vds - 漏源擊穿電壓：
100 V
Id - 連續漏極電流：
8 A
Rds On - 漏源電阻：
530 mOhms
Vgs - 柵源電壓：
30 V
最低工作溫度：
- 55 C
最高工作溫度：
+ 175 C
Pd - 功耗：
65 W
配置：
單身的
頻道模式：
增強
商品名：
場效應管
打包：
管子
高度：
16.3 mm
長度：
10.67 mm
系列：
FQP8P10
晶體管類型：
1 P-Channel
類型：
MOSFET
寬度：
4.7 mm
品牌：
安森美半導體/飛兆半導體
正向跨導 - 最小值：
4.3 S
秋季時間：
35 ns
產品類別：
MOSFET
上升時間：
110 ns
出廠包裝數量：
1000
子類別：
MOSFET
典型關斷延遲時間：
20 ns
典型的開啟延遲時間：
11 ns
單位重量：
0.063493 oz
Tags
FQP8, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    M***u
    M***u
    CA

    looks good thks

    2019-04-02
    V***n
    V***n
    RU

    Normal

    2019-01-09
***Components
In a Tube of 50, P-Channel MOSFET, 5.7 A, 100 V, 3-Pin TO-220 ON Semiconductor FQP8P10
***Semiconductor
Power MOSFET, P-Channel, QFET®, -100 V, -8 A, 530 mΩ, TO-220
*** Electronics
TRANSISTOR MOSFET P-CHAN E-MODE TO-220
***ical
Trans MOSFET P-CH 100V 8A 3-Pin(3+Tab) TO-220AB Rail
***i-Key
MOSFET P-CH 100V 8A TO-220
***ure Electronics
100V, 8A, 0.53OHM, P-CHANNEL, TO-220
***ser
MOSFETs 100V P-Channel QFET
***inecomponents.com
100V P-Channel QFET®
***ark
Mosfet, P, To-220; Transistor Polarity:p Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:-100V; On Resistance Rds(On):0.41Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:65W Rohs Compliant: No
***rchild Semiconductor
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***ment14 APAC
Prices include import duty and tax. MOSFET, P, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.41ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:65W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Current Id Max:-8A; Device Marking:FQP8P10; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Pulse Current Idm:32A; Termination Type:Through Hole; Voltage Vds Typ:-100V; Voltage Vgs Max:-30V; Voltage Vgs Rds on Measurement:-10V
***nell
MOSFET, P, TO-220; Biegunowość tranzystora:Kanał P; Prąd ciągły Id drenu:8A; Napięcie drenu / źródła Vds:-100V; Rezystancja przewodzenia Rds(on):0.41ohm; Napięcie Vgs pomiaru Rds(on):-10V; Napięcie progowe Vgs:-4V; Straty mocy Pd:65W; Rodzaj obudowy tranzystora:TO-220; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:175°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:-; Substancje SVHC:Lead (27-Jun-2018); Maks. prąd Id:-8A; Napięcie Vds, typ.:-100V; Napięcie Vgs pomiaru Rds on:-10V; Napięcie Vgs, maks.:-30V; Oznaczenie układu:FQP8P10; Prąd impulsowy Idm:32A; Temperatura robocza, min.:-55°C; Typ zakończenia:Przewlekane; Zakres temperatury roboczej:-55°C do +175°C
型號 製造商 描述 庫存 價格
FQP8P10
DISTI # V36:1790_06301292		ON SemiconductorQF -100V 530MOHM TO2200
  • 1000000:$0.3139
  • 500000:$0.3148
  • 100000:$0.4927
  • 10000:$0.9130
  • 1000:$0.9900
FQP8P10
DISTI # FQP8P10FS-ND		ON SemiconductorMOSFET P-CH 100V 8A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		1031In Stock
  • 5000:$0.4185
  • 3000:$0.4406
  • 1000:$0.4720
  • 100:$0.7238
  • 25:$0.8812
  • 10:$0.9280
  • 1:$1.0400
FQP8P10
DISTI # FQP8P10		ON SemiconductorTrans MOSFET P-CH 100V 8A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP8P10)
RoHS: Compliant
Min Qty: 1		Europe - 200
  • 1000:€0.3229
  • 500:€0.3479
  • 100:€0.3769
  • 50:€0.4119
  • 25:€0.4529
  • 10:€0.5029
  • 1:€0.5659
FQP8P10
DISTI # FQP8P10		ON SemiconductorTrans MOSFET P-CH 100V 8A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP8P10)
RoHS: Compliant
Min Qty: 50
Container: Tube		Americas - 1985
  • 500:$0.3209
  • 250:$0.3289
  • 150:$0.3339
  • 100:$0.3379
  • 50:$0.3399
FQP8P10
DISTI # FQP8P10		ON SemiconductorTrans MOSFET P-CH 100V 8A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FQP8P10)
RoHS: Compliant
Min Qty: 715
Container: Bulk		Americas - 0
  • 7150:$0.4319
  • 3575:$0.4429
  • 2145:$0.4479
  • 1430:$0.4539
  • 715:$0.4569
FQP8P10.
DISTI # 14J0096		ON SemiconductorMOSFET, P, TO-220,Transistor Polarity:P Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:-100V,On Resistance Rds(on):0.41ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-4V,Power Dissipation Pd:65W RoHS Compliant: No3259
  • 1000:$0.4550
  • 500:$0.5760
  • 100:$0.6510
  • 10:$0.8480
  • 1:$1.0000
FQP8P10.
DISTI # 27AC5844		Fairchild Semiconductor CorporationQF -100V 530MOHM TO220 ROHS COMPLIANT: YES0
  • 500:$0.3310
  • 250:$0.3390
  • 150:$0.3440
  • 100:$0.3480
  • 1:$0.3500
FQP8P10
DISTI # 512-FQP8P10		ON SemiconductorMOSFET 100V P-Channel QFET
RoHS: Compliant		2285
  • 1:$0.9900
  • 10:$0.8400
  • 100:$0.6450
  • 500:$0.5700
  • 1000:$0.4500
FQP8P10Fairchild Semiconductor CorporationPower Field-Effect Transistor, 8A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		6708
  • 1000:$0.4000
  • 500:$0.4200
  • 100:$0.4300
  • 25:$0.4500
  • 1:$0.4900
FQP8P10
DISTI # 8075879		ON SemiconductorMOSFETFAIRCHILDFQP8P10, PK1150
  • 1000:£0.3200
  • 500:£0.3740
  • 100:£0.4580
  • 50:£0.5270
  • 10:£0.5960
FQP8P10.
DISTI # 4388215		ON SemiconductorMOSFET, P, TO-220
RoHS: Not Compliant		4254
  • 1000:$0.6920
  • 500:$0.8770
  • 100:$0.9920
  • 10:$1.3000
  • 1:$1.5200
FQP8P10.
DISTI # 4388215		ON SemiconductorMOSFET, P, TO-220
RoHS: Not Compliant		4272
  • 500:£0.4440
  • 250:£0.4730
  • 100:£0.5020
  • 10:£0.7100
  • 1:£0.8800
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PV36X502C01B00

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5P49V5901B000NLGI

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FQP17P10

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 Aluminum Electrolytic Capacitors - Radial Leaded 10uF 25V 20% tol. ELECTROLYTIC
可用性
庫存:
Available
訂購:
1985
輸入數量:
FQP8P10的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$0.99
US$0.99
10
US$0.84
US$8.40
100
US$0.64
US$64.50
500
US$0.57
US$285.00
1000
US$0.45
US$450.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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