MAT03EHZ

MAT03EHZ
Mfr. #:
MAT03EHZ
製造商:
Analog Devices Inc.
描述:
Bipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS
生命週期:
製造商新產品
數據表:
MAT03EHZ 數據表
交貨:
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ECAD Model:
更多信息:
MAT03EHZ 更多信息 MAT03EHZ Product Details
產品屬性
屬性值
製造商:
模擬設備公司
產品分類:
雙極晶體管 - BJT
RoHS:
Y
包裝/案例:
TO-78-6
晶體管極性:
PNP
配置:
雙重的
集電極-發射極電壓 VCEO 最大值:
36 V
集電極-基極電壓 VCBO:
36 V
集電極-發射極飽和電壓:
100 mV
最大直流集電極電流:
20 mA
增益帶寬積 fT:
190 MHz
最低工作溫度:
- 55 C
最高工作溫度:
+ 125 C
系列:
MAT03
高度:
4.7 mm (Max)
長度:
9.4 mm (Max)
打包:
大部分
寬度:
9.4 mm (Max)
品牌:
模擬設備公司
DC 集電極/基極增益 hfe 最小值:
80 at 10 uA, 36 V
產品類別:
BJT - 雙極晶體管
出廠包裝數量:
100
子類別:
晶體管
Tags
MAT03, MAT0, MAT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Electronic Components
Bipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS
***ical
Trans GP BJT PNP 36V 0.02A 6-Pin TO-78 Tube
***log Devices
The MAT03 dual monolithic PNP transistor offers excellent parametric matching and high frequency performance. Low noise characteristics (1nV/√Hz max @ 1 kHz), high bandwidth (190 MHz typical), and low offset voltage (100 µV max), makes the MAT03 an excellent choice for demanding preamplifier applications. Tight current gain matching (3% max mismatch) and high current gain (100 min), over a wide range of collector current, makes the MAT03 an excellent choice for current mirrors. A low value of bulk resistance (typically 0.3 Ohm) also makes the MAT03 an ideal component for applications requiring accurate logarithmic conformance. Each transistor is individually tested to data sheet specifications. Device performance is guaranteed at 25°C and over the extended industrial and military temperature ranges. To insure the long-term stability of the matching parameters, internal protection diodes across the base-emitter junction clamp any reverse base-emitter junction potential. This prevents a base-emitter break-down condition which can result in degradation of gain and matching performance due to excessive breakdown current.
型號 製造商 描述 庫存 價格
MAT03EHZ
DISTI # MAT03EHZ-ND
Analog Devices IncTRANS 2PNP 36V 0.02A TO78-6
RoHS: Compliant
Min Qty: 1
Container: Tube
Limited Supply - Call
    MAT03EH
    DISTI # 584-MAT03EH
    Analog Devices IncBipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS
    RoHS: Not compliant
    0
      MAT03EHZ
      DISTI # 584-MAT03EHZ
      Analog Devices IncBipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS
      RoHS: Compliant
      0
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        可用性
        庫存:
        Available
        訂購:
        3000
        輸入數量:
        MAT03EHZ的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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