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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| IRF630NSTRLPBF DISTI # V72:2272_13890568 | Infineon Technologies AG | Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 968 |
|
| IRF630NSTRLPBF DISTI # IRF630NSTRLPBFCT-ND | Infineon Technologies AG | MOSFET N-CH 200V 9.3A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 1925In Stock |
|
| IRF630NSTRLPBF DISTI # IRF630NSTRLPBFTR-ND | Infineon Technologies AG | MOSFET N-CH 200V 9.3A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR) | 1600In Stock |
|
| IRF630NSTRLPBF DISTI # 30312997 | Infineon Technologies AG | Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 9600 |
|
| IRF630NSTRLPBF DISTI # 26196294 | Infineon Technologies AG | Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 968 |
|
| IRF630NSTRLPBF DISTI # IRF630NSTRLPBF | Infineon Technologies AG | Trans MOSFET N-CH 200V 9.3A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF630NSTRLPBF) RoHS: Compliant Min Qty: 1600 Container: Reel | Americas - 800 |
|
| IRF630NSTRLPBF DISTI # IRF630NSTRLPBF | Infineon Technologies AG | Trans MOSFET N-CH 200V 9.3A 3-Pin(2+Tab) D2PAK T/R (Alt: IRF630NSTRLPBF) RoHS: Compliant Min Qty: 1600 Container: Tape and Reel | Asia - 0 | |
| IRF630NSTRLPBF DISTI # 13AC9181 | Infineon Technologies AG | MOSFET, N-CH, 200V, 9.3A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:9.3A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation, RoHS Compliant: Yes | 1703 |
|
| IRF630NSTRLPBF DISTI # 70019553 | Infineon Technologies AG | IRF630NSTRLPBF N-channel MOSFET Transistor,9.3 A,200 V,3+Tab-Pin D2PAK RoHS: Compliant | 0 |
|
| IRF630NSTRLPBF DISTI # 942-IRF630NSTRLPBF | Infineon Technologies AG | MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC RoHS: Compliant | 973 |
|
| IRF630NSTRLPBF | International Rectifier | RoHS: Not Compliant | 600 |
|
| IRF630NSTRLPBF DISTI # 9154945P | Infineon Technologies AG | MOSFET N-CHANNEL HEXFET 200V 9.5A D2PAK, RL | 352 |
|
| IRF630NSTRLPBF DISTI # 2725890 | Infineon Technologies AG | MOSFET, N-CH, 200V, 9.3A, TO-263 RoHS: Compliant | 1653 |
|
| IRF630NSTRLPBF DISTI # C1S322000481444 | Infineon Technologies AG | Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 968 |
|
| IRF630NSTRLPBF DISTI # C1S322000481435 | Infineon Technologies AG | Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 5600 |
|
| IRF630NSTRLPBF DISTI # 2725890 | Infineon Technologies AG | MOSFET, N-CH, 200V, 9.3A, TO-263 RoHS: Compliant | 2403 |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: IRF630NSTRRPBF OMO.#: OMO-IRF630NSTRRPBF |
MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC |
|
Mfr.#: IRF630A OMO.#: OMO-IRF630A-1190 |
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: IRF630A8H OMO.#: OMO-IRF630A8H-1190 |
全新原裝 |
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Mfr.#: IRF630CM OMO.#: OMO-IRF630CM-1190 |
全新原裝 |
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Mfr.#: IRF630H OMO.#: OMO-IRF630H-1190 |
全新原裝 |
|
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Mfr.#: IRF630NSTRL OMO.#: OMO-IRF630NSTRL-1190 |
MOSFET, N-CH, 200V, 9.3A, TO-263 |
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Mfr.#: IRF630NSTRPBF,IRF640NSTR |
全新原裝 |
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Mfr.#: IRF630PBF,IRF630 OMO.#: OMO-IRF630PBF-IRF630-1190 |
全新原裝 |
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Mfr.#: IRF630STRR OMO.#: OMO-IRF630STRR-VISHAY |
MOSFET N-CH 200V 9A D2PAK |
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Mfr.#: IRF630STRRPBF OMO.#: OMO-IRF630STRRPBF-VISHAY |
IGBT Transistors MOSFET N-Chan 200V 9.0 Amp |