We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| K4B2G1646E-BIK000 DISTI # K4B2G1646E-BIK000 | Samsung Semiconductor | DRAMs Parts and Modules (Alt: K4B2G1646E-BIK000) RoHS: Compliant Min Qty: 1 | Europe - 1 |
|
| K4B2G1646F-BYK00CV DISTI # K4B2G1646F-BYK00CV | Samsung Semiconductor | DRAMs Parts and Modules (Alt: K4B2G1646F-BYK00CV) RoHS: Compliant Min Qty: 1 | Europe - 1100 |
|
| K4B2G1646F-BMMATCV DISTI # K4B2G1646F-BMMATCV | Samsung Semiconductor | DRAMs Parts and Modules (Alt: K4B2G1646F-BMMATCV) RoHS: Compliant Min Qty: 2000 | Europe - 4000 |
|
| K4B2G1646F-BYK0TCV DISTI # K4B2G1646F-BYK0TCV | Samsung Semiconductor | DRAMs Parts and Modules (Alt: K4B2G1646F-BYK0TCV) RoHS: Compliant Min Qty: 1 | Europe - 6020 |
|
| K4B2G1646Q-BYK0000 DISTI # K4B2G1646Q-BYK0000 | Samsung Semiconductor | DRAM Chip DDR3 SDRAM 2G-Bit 128Mx16 1.35V F-BGA (Alt: K4B2G1646Q-BYK0000) RoHS: Compliant Min Qty: 1 | Europe - 29 |
|
| K4B2G1646F-BYK0000 DISTI # K4B2G1646F-BYK0000 | Samsung Semiconductor | DRAM Chip DDR3L SDRAM 2G-Bit 128M x 16 1.5V 96-Pin F-BGA - Trays (Alt: K4B2G1646F-BYK0000) Min Qty: 1120 Container: Tray | Americas - 0 | |
| K4B2G1646F-BMK00CV DISTI # K4B2G1646F-BMK00CV | Samsung Semiconductor | DRAMs Parts and Modules (Alt: K4B2G1646F-BMK00CV) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| K4B2G1646F-BCNBTCV DISTI # K4B2G1646F-BCNBTCV | Samsung Semiconductor | DRAMs Parts and Modules (Alt: K4B2G1646F-BCNBTCV) RoHS: Compliant Min Qty: 1 | Europe - 0 | |
| K4B2G1646F-BYMATCV DISTI # K4B2G1646F-BYMATCV | Samsung Semiconductor | DRAMs Parts and Modules (Alt: K4B2G1646F-BYMATCV) RoHS: Compliant Min Qty: 1 | Europe - 0 | |
| K4B2G1646F-BMMA0CV DISTI # K4B2G1646F-BMMA0CV | Samsung Semiconductor | DRAMs Parts and Modules (Alt: K4B2G1646F-BMMA0CV) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| K4B2G1646E-HCH9000 DISTI # K4B2G1646E-HCH9000 | Samsung Semiconductor | DRAM CHIP DDR3 SDRAM 2G-BIT 1.5V 96-PIN FBGA TRAY - Trays (Alt: K4B2G1646E-HCH9000) RoHS: Compliant Min Qty: 1120 Container: Tray | Americas - 0 | |
| K4B2G1646F-BYMA000 DISTI # K4B2G1646F-BYMA000 | Samsung Semiconductor | DRAM Chip DDR3L SDRAM 2G-Bit 128M x 16 1.35V 96-Pin FBGA - Trays (Alt: K4B2G1646F-BYMA000) Min Qty: 1120 Container: Tray | Americas - 0 | |
| K4B2G1646F-BYMA000 DISTI # K4B2G1646F-BYMA000 | Samsung Semiconductor | DRAM Chip DDR3L SDRAM 2G-Bit 128M x 16 1.35V 96-Pin FBGA (Alt: K4B2G1646F-BYMA000) RoHS: Compliant Min Qty: 1 | Europe - 0 | |
| K4B2G1646F-BCNB0CV DISTI # K4B2G1646F-BCNB0CV | Samsung Semiconductor | DRAMs Parts and Modules (Alt: K4B2G1646F-BCNB0CV) RoHS: Compliant Min Qty: 1 | Europe - 0 | |
| K4B2G1646F-BYMA0CV DISTI # K4B2G1646F-BYMA0CV | Samsung Semiconductor | DRAMs Parts and Modules (Alt: K4B2G1646F-BYMA0CV) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| K4B2G1646C-HCKO | Samsung Semiconductor | 29 |
| |
| K4B2G1646Q-BCK0 | Samsung Electro-Mechanics | DDR DRAM, 128MX16, 0.225NS, CMOS, PBGA96 | 73 |
|
| K4B2G1646B-HCF8 | Samsung Semiconductor | 6 | ||
| K4B2G1646B-HCF8000 | Samsung Electronics Co. Ltd | 19 | ||
| K4B2G1646B-HCF8000 | Samsung Semiconductor | 18 | ||
| K4B2G1646Q-BCK0 | Samsung Semiconductor | 20 | ||
| K4B2G16460-BCMA | Samsung Electronics Co. Ltd | 50 | ||
| K4B2G1646E-BCK0000 | Samsung Semiconductor | 12 | ||
| K4B2G1646C-HCH9 | Samsung Electronics Co. Ltd | 72 | ||
| K4B2G1646C-HCNB | Samsung Semiconductor | 1874 | ||
| K4B2G1646EBCH9 | Samsung Electronics Co. Ltd | RoHS: Not Compliant | Europe - 80 | |
| K4B2G1646QBIK0 | Samsung Electronics Co. Ltd | RoHS: Compliant | Europe - 3120 | |
| K4B2G1646F-BCK0000 DISTI # K4B2G1646F-BCK0000 | Samsung Electronics Co. Ltd | 388 |
| |
| K4B2G1646F-BYMA0CV | INSTOCK | 6883 | ||
| K4B2G1646E-BQK0 | Samsung Semiconductor | INSTOCK | 19 | |
| K4B2G1646F-BYK0T00 | INSTOCK | 4337 | ||
| K4B2G1646F-BCNB000 | INSTOCK | 434 | ||
| K4B2G1646F-BYK0000 | INSTOCK | 58388 | ||
| K4B2G1646C-HCKO | Samsung Semiconductor | INSTOCK | 1377 | |
| K4B2G1646F-BYMAT00 | INSTOCK | 72168 | ||
| K4B2G1646E-BCK0 | Samsung Semiconductor | INSTOCK | 11966 | |
| K4B2G1646B-HCH9 | Samsung Semiconductor | INSTOCK | 40 | |
| K4B2G1646F-BYMATCV | INSTOCK | 22812 | ||
| K4B2G1646F-BCNBT00 | INSTOCK | 46731 | ||
| K4B2G1646F-BMK0T00 | INSTOCK | 25414 | ||
| K4B2G1646F-BMK0000 | INSTOCK | 3653 | ||
| K4B2G1646B-HCH9000 | Samsung Semiconductor | INSTOCK | 40 | |
| K4B2G1646F-BYMA000 | INSTOCK | 15589 |
| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: K4B2G0846D-HCK0T00 OMO.#: OMO-K4B2G0846D-HCK0T00-1190 |
全新原裝 |
|
|
Mfr.#: K4B2G0846D-HYH9 OMO.#: OMO-K4B2G0846D-HYH9-1190 |
全新原裝 |
|
|
Mfr.#: K4B2G0846Q-BCK0000E OMO.#: OMO-K4B2G0846Q-BCK0000E-1190 |
全新原裝 |
|
|
Mfr.#: K4B2G1646B-HIH9 OMO.#: OMO-K4B2G1646B-HIH9-1190 |
全新原裝 |
|
|
Mfr.#: K4B2G1646C-HCH9TCV OMO.#: OMO-K4B2G1646C-HCH9TCV-1190 |
全新原裝 |
|
|
Mfr.#: K4B2G1646C-HCKO OMO.#: OMO-K4B2G1646C-HCKO-1190 |
全新原裝 |
|
|
Mfr.#: K4B2G1646E-BCK00DT OMO.#: OMO-K4B2G1646E-BCK00DT-1190 |
全新原裝 |
|
|
Mfr.#: K4B2G1646Q-BCMA000 OMO.#: OMO-K4B2G1646Q-BCMA000-1190 |
全新原裝 |
|
|
Mfr.#: K4B2G1646Q-BIK0 OMO.#: OMO-K4B2G1646Q-BIK0-1190 |
全新原裝 |
|
|
Mfr.#: K4B2G1646Q-BYK0000 OMO.#: OMO-K4B2G1646Q-BYK0000-230 |
DRAM Chip DDR3 SDRAM 2G-Bit 128Mx16 1.35V F-BGA (Alt: K4B2G1646Q-BYK0000) |