NSBA114EF3T5G

NSBA114EF3T5G
Mfr. #:
NSBA114EF3T5G
製造商:
ON Semiconductor
描述:
Bipolar Transistors - Pre-Biased SOT-1123 NBRT TRNSTR
生命週期:
製造商新產品
數據表:
NSBA114EF3T5G 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NSBA114EF3T5G DatasheetNSBA114EF3T5G Datasheet (P4-P6)NSBA114EF3T5G Datasheet (P7-P9)NSBA114EF3T5G Datasheet (P10-P12)
ECAD Model:
產品屬性
屬性值
製造商:
安森美半導體
產品分類:
雙極晶體管 - 預偏置
RoHS:
Y
配置:
單身的
晶體管極性:
PNP
典型輸入電阻:
10 kOhms
典型電阻比:
1
安裝方式:
貼片/貼片
包裝/案例:
SOT-1123-3
集電極-發射極電壓 VCEO 最大值:
50 V
連續集電極電流:
100 mA
峰值直流集電極電流:
100 mA
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
系列:
NSBA114EF3
打包:
捲軸
高度:
0.37 mm
長度:
0.6 mm
寬度:
0.8 mm
品牌:
安森美半導體
產品類別:
BJT - 雙極晶體管 - 預偏置
出廠包裝數量:
8000
子類別:
晶體管
Tags
NSBA114E, NSBA114, NSBA11, NSBA1, NSBA, NSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
PNP Bipolar Digital Transistor (BRT) 50 V, 100 mA, 10 k, 10 k
***et
Trans Digital BJT PNP 50V 100mA 3-Pin SOT-1123 T/R
***ark
Brt Transistor, 50V, 10K/10Kohm, Sot1123; Digital Transistor Polarity:single Pnp; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:10Kohm; Base-Emitter Resistor R2:10Kohm Rohs Compliant: Yes
***th Star Micro
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor. The digital transistor eliminates these individual components by integrating them into a single device. The use of a digital transistor can reduce both system cost and board space. The device is housed in the SOT1123 package which is designed for low power surface mount applications.
型號 製造商 描述 庫存 價格
NSBA114EF3T5G
DISTI # NSBA114EF3T5G-ND
ON SemiconductorTRANS PREBIAS PNP 254MW SOT1123
RoHS: Compliant
Min Qty: 8000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 8000:$0.0977
NSBA114EF3T5G
DISTI # NSBA114EF3T5G
ON SemiconductorTrans Digital BJT PNP 50V 100mA 3-Pin SOT-1123 T/R (Alt: NSBA114EF3T5G)
RoHS: Compliant
Min Qty: 8000
Container: Tape and Reel
Europe - 0
  • 8000:€0.1469
  • 16000:€0.1109
  • 32000:€0.1009
  • 48000:€0.0899
  • 80000:€0.0849
NSBA114EF3T5G
DISTI # NSBA114EF3T5G
ON SemiconductorTrans Digital BJT PNP 50V 100mA 3-Pin SOT-1123 T/R - Tape and Reel (Alt: NSBA114EF3T5G)
RoHS: Compliant
Min Qty: 16000
Container: Reel
Americas - 0
  • 16000:$0.0779
  • 32000:$0.0769
  • 48000:$0.0759
  • 80000:$0.0749
  • 160000:$0.0739
NSBA114EF3T5G
DISTI # 49X8912
ON SemiconductorBRT TRANSISTOR, 50V, 10K/10KOHM, SOT1123,Digital Transistor Polarity:Single PNP,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:10kohm,Base-Emitter Resistor R2:10kohm RoHS Compliant: Yes0
  • 5000:$0.1070
  • 2500:$0.1260
  • 1000:$0.1550
  • 500:$0.1820
  • 250:$0.2160
  • 100:$0.2580
  • 50:$0.3090
  • 1:$0.4030
NSBA114EF3T5G
DISTI # 01P5096
ON SemiconductorBRT TRANSISTOR, 50V, 10K/10KOHM, SOT1123, FULL REEL,Digital Transistor Polarity:Single PNP,Collector Emitter Voltage V(br)ceo:50V,Continuous Collector Current Ic:100mA,Base Input Resistor R1:10kohm,RF Transistor Case:SOT-1123 RoHS Compliant: Yes0
  • 1:$0.1200
NSBA114EF3T5GON Semiconductor 
RoHS: Not Compliant
221500
  • 1000:$0.0900
  • 100:$0.1000
  • 500:$0.1000
  • 1:$0.1100
  • 25:$0.1100
NSBA114EF3T5G
DISTI # 863-NSBA114EF3T5G
ON SemiconductorBipolar Transistors - Pre-Biased SOT-1123 NBRT TRNSTR
RoHS: Compliant
8000
  • 1:$0.3500
  • 10:$0.2660
  • 100:$0.1440
  • 1000:$0.1080
  • 2500:$0.0930
  • 8000:$0.0870
  • 24000:$0.0800
  • 48000:$0.0770
  • 96000:$0.0740
圖片 型號 描述
NSBA114TDP6T5G

Mfr.#: NSBA114TDP6T5G

OMO.#: OMO-NSBA114TDP6T5G

Bipolar Transistors - Pre-Biased DUAL PBRT
NSBA114YF3T5G

Mfr.#: NSBA114YF3T5G

OMO.#: OMO-NSBA114YF3T5G

Bipolar Transistors - Pre-Biased SOT-1123 NBRT TRNSTR
NSBA113EDXV6T1G

Mfr.#: NSBA113EDXV6T1G

OMO.#: OMO-NSBA113EDXV6T1G

Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
NSBA114EDXV6T5

Mfr.#: NSBA114EDXV6T5

OMO.#: OMO-NSBA114EDXV6T5

Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
NSBA113EDXV6T1

Mfr.#: NSBA113EDXV6T1

OMO.#: OMO-NSBA113EDXV6T1-ON-SEMICONDUCTOR

TRANS 2PNP PREBIAS 0.5W SOT563
NSBA114EDXV6T1

Mfr.#: NSBA114EDXV6T1

OMO.#: OMO-NSBA114EDXV6T1-1190

Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
NSBA114EDXV6T5

Mfr.#: NSBA114EDXV6T5

OMO.#: OMO-NSBA114EDXV6T5-ON-SEMICONDUCTOR

TRANS 2PNP PREBIAS 0.5W SOT563
NSBA114TDXV6T1G

Mfr.#: NSBA114TDXV6T1G

OMO.#: OMO-NSBA114TDXV6T1G-1190

TRANS 2PNP PREBIAS 0.5W SOT563
NSBA114TDXV6T5G

Mfr.#: NSBA114TDXV6T5G

OMO.#: OMO-NSBA114TDXV6T5G-1190

TRANS PREBIAS DUAL PNP SOT563
NSBA115TDP6T5G

Mfr.#: NSBA115TDP6T5G

OMO.#: OMO-NSBA115TDP6T5G-ON-SEMICONDUCTOR

Bipolar Transistors - Pre-Biased DUAL PBRT
可用性
庫存:
Available
訂購:
1991
輸入數量:
NSBA114EF3T5G的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$0.35
US$0.35
10
US$0.27
US$2.66
100
US$0.14
US$14.40
1000
US$0.11
US$108.00
2500
US$0.09
US$232.50
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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