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NXH160T120L2Q2F2SG

NXH160T120L2Q2F2SG
Mfr. #:
NXH160T120L2Q2F2SG
製造商:
ON Semiconductor
描述:
IGBT Modules PIM 1200V 160A SPLIT TNP IGBT
生命週期:
製造商新產品
數據表:
NXH160T120L2Q2F2SG 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
NXH160T120L2Q2F2SG 更多信息
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
IGBT 模塊
RoHS：
Y
技術：
矽
產品：
IGBT 矽模塊
配置：
分裂-T
集電極-發射極電壓 VCEO 最大值：
600 V, 1200 V
集電極-發射極飽和電壓：
1.47 V, 2.15 V
25 C 時的連續集電極電流：
100 A, 160 A
柵極-發射極漏電流：
300 nA, 500 nA
Pd - 功耗：
500 W
包裝/案例：
Q2PACK
最低工作溫度：
- 40 C
最高工作溫度：
+ 125 C
打包：
托盤
品牌：
安森美半導體
安裝方式：
壓合
最大柵極發射極電壓：
20 V
產品類別：
IGBT 模塊
出廠包裝數量：
12
子類別：
IGBT
Tags
NXH1, NXH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Power Integrated Module (PIM), IGBT 1200 V, 160 A and 600 V, 100 A
***ical
Trans IGBT Module N-CH 1200V 181A 500000mW 56-Pin Case 180AK Tray
***et
Transistor IGBT Module N-CH 1.2kV 160A ±20V Screw Tray
***ark
Igbt, Module, N-Ch, 1.2Kv, 160A; Transistor Polarity:n Channel; Dc Collector Current:160A; Collector Emitter Saturation Voltage Vce(On):2.15V; Power Dissipation Pd:500W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
Solutions for Energy Infrastructure
ON Semiconductor Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. ON Semiconductor offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.
NXH160T120L2Q2F2SG Power Integrated Module
On-Semiconductor NXH160T120L2Q2F2SG Power Integrated Module (PIM) contains a split T-type neutral point clamped three-level inverter. This module consists of two 160A/1200V half-bridge IGBTs with inverse diodes, two 100A/600V neutral point IGBTs with inverse diodes, and two neutral point 120A/600V rectifiers. The NXH160T120L2Q2F2SG module also includes two half-bridge 60A/1200V rectifiers and a Negative Temperature Co-efficient (NTC) thermistor. Typical applications include solar inverters and Uninterruptible Power Supplies (UPS).
型號 製造商 描述 庫存 價格
NXH160T120L2Q2F2SG
DISTI # V99:2348_18980275		ON SemiconductorPIM 1200V, 160A SPLIT TNP12
  • 12:$124.4000
  • 1:$134.3600
NXH160T120L2Q2F2SG
DISTI # NXH160T120L2Q2F2SGOS-ND		ON SemiconductorPIM 1200V, 160A SPLIT TNP
RoHS: Compliant
Min Qty: 1
Container: Tray		9In Stock
  • 1:$134.6400
NXH160T120L2Q2F2SG
DISTI # 27057668		ON SemiconductorPIM 1200V, 160A SPLIT TNP12
  • 1:$134.3600
NXH160T120L2Q2F2SG
DISTI # NXH160T120L2Q2F2SG		ON SemiconductorSplit T-Type NPC Power Module 1200 V 160 A IGBT 600 V 100 A IGBT Tray - Trays (Alt: NXH160T120L2Q2F2SG)
RoHS: Compliant
Min Qty: 6000
Container: Tray		Americas - 0
    NXH160T120L2Q2F2SG
    DISTI # 48AC1759    		ON SemiconductorIGBT, MODULE, N-CH, 1.2KV, 160A,Transistor Polarity:N Channel,DC Collector Current:160A,Collector Emitter Saturation Voltage Vce(on):2.15V,Power Dissipation Pd:500W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes12
    • 100:$118.2000
    • 50:$121.3100
    • 25:$124.4200
    • 10:$127.1000
    • 5:$133.3100
    • 1:$135.9800
    NXH160T120L2Q2F2SG
    DISTI # 863-NXH160T120Q2F2SG    		ON SemiconductorIGBT Modules PIM 1200V 160A SPLIT TNP IGBT
    RoHS: Compliant    		12
    • 1:$134.6300
    • 5:$131.9900
    • 10:$125.8400
    • 25:$123.1900
    NXH160T120L2Q2F2SG
    DISTI # 1723299    		ON SemiconductorINTELLIGENT POWER MODULE 160A 1200V, PU12
    • 12:£93.9500
    NXH160T120L2Q2F2SG
    DISTI # 2835629    		ON SemiconductorIGBT, MODULE, N-CH, 1.2KV, 160A
    RoHS: Compliant    		12
    • 1:$202.9000
    NXH160T120L2Q2F2SG
    DISTI # 2835629    		ON SemiconductorIGBT, MODULE, N-CH, 1.2KV, 160A12
    • 10:£89.2900
    • 5:£101.0000
    • 1:£103.0000
    圖片 型號 描述
    NXH160T120L2Q2F2SG

    Mfr.#: NXH160T120L2Q2F2SG

    OMO.#: OMO-NXH160T120L2Q2F2SG

    		 IGBT Modules PIM 1200V 160A SPLIT TNP IGBT
    NXH160T120L2Q2F2SG

    Mfr.#: NXH160T120L2Q2F2SG

    OMO.#: OMO-NXH160T120L2Q2F2SG-ON-SEMICONDUCTOR

    		 PIM 1200V, 160A SPLIT TNP
    可用性
    庫存:
    12
    訂購:
    1995
    輸入數量:
    NXH160T120L2Q2F2SG的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$134.63
    US$134.63
    5
    US$131.99
    US$659.95
    10
    US$125.84
    US$1 258.40
    25
    US$123.19
    US$3 079.75
    100
    US$117.03
    US$11 703.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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