SISH410DN-T1-GE3

SISH410DN-T1-GE3
Mfr. #:
SISH410DN-T1-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET 20V Vds; +/-20V Vgs PowerPAK 1212-8SH
生命週期:
製造商新產品
數據表:
SISH410DN-T1-GE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
SISH410DN-T1-GE3 DatasheetSISH410DN-T1-GE3 Datasheet (P4-P6)SISH410DN-T1-GE3 Datasheet (P7-P8)
ECAD Model:
更多信息:
SISH410DN-T1-GE3 更多信息
產品屬性
屬性值
製造商:
威世
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
PowerPAK1212-8
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
20 V
Id - 連續漏極電流:
35 A
Rds On - 漏源電阻:
4.8 mOhms
Vgs th - 柵源閾值電壓:
1.2 V
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
41 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
52 W
配置:
單身的
頻道模式:
增強
商品名:
TrenchFET、PowerPAK
打包:
捲軸
系列:
情報局
晶體管類型:
1 N-Channel
品牌:
威世 / Siliconix
正向跨導 - 最小值:
70 A
秋季時間:
15 ns
產品類別:
MOSFET
上升時間:
15 ns
出廠包裝數量:
3000
子類別:
MOSFET
典型關斷延遲時間:
30 ns
典型的開啟延遲時間:
12 ns
Tags
SISH4, SISH, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
型號 製造商 描述 庫存 價格
SISH410DN-T1-GE3
DISTI # V99:2348_22587810
Vishay IntertechnologiesN-Chanel 20 V (D-S) MOSFET PowerPAK 1212-8SH 300M sh ch , 4.8 m @ 10V m @ 7.5V 6.3 m @ 4.5V6000
  • 3000:$0.4211
  • 1000:$0.4662
  • 500:$0.5716
  • 100:$0.6715
  • 10:$0.9777
  • 1:$1.1862
SISH410DN-T1-GE3
DISTI # V36:1790_22587810
Vishay IntertechnologiesN-Chanel 20 V (D-S) MOSFET PowerPAK 1212-8SH 300M sh ch , 4.8 m @ 10V m @ 7.5V 6.3 m @ 4.5V0
    SISH410DN-T1-GE3
    DISTI # SISH410DN-T1-GE3TR-ND
    Vishay SiliconixMOSFET N-CHAN PPAK 1212-8SH
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)
    6000In Stock
    • 6000:$0.4354
    • 3000:$0.4572
    SISH410DN-T1-GE3
    DISTI # SISH410DN-T1-GE3CT-ND
    Vishay SiliconixMOSFET N-CHAN PPAK 1212-8SH
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    6000In Stock
    • 1000:$0.5045
    • 500:$0.6391
    • 100:$0.7736
    • 10:$0.9920
    • 1:$1.1100
    SISH410DN-T1-GE3
    DISTI # SISH410DN-T1-GE3DKR-ND
    Vishay SiliconixMOSFET N-CHAN PPAK 1212-8SH
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    6000In Stock
    • 1000:$0.5045
    • 500:$0.6391
    • 100:$0.7736
    • 10:$0.9920
    • 1:$1.1100
    SISH410DN-T1-GE3
    DISTI # 30744711
    Vishay IntertechnologiesN-Chanel 20 V (D-S) MOSFET PowerPAK 1212-8SH 300M sh ch , 4.8 m @ 10V m @ 7.5V 6.3 m @ 4.5V6000
    • 6000:$0.4211
    • 3000:$0.4354
    • 1000:$0.4662
    • 500:$0.5716
    • 100:$0.6715
    • 15:$0.9777
    SISH410DN-T1-GE3
    DISTI # SISH410DN-T1-GE3
    Vishay Intertechnologies- Tape and Reel (Alt: SISH410DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 6000
    Container: Reel
    Americas - 0
    • 60000:$0.3979
    • 30000:$0.4089
    • 18000:$0.4209
    • 12000:$0.4389
    • 6000:$0.4519
    SISH410DN-T1-GE3
    DISTI # 81AC3495
    Vishay IntertechnologiesN-CHANNEL 20-V (D-S) MOSFET0
    • 10000:$0.3950
    • 6000:$0.4050
    • 4000:$0.4200
    • 2000:$0.4670
    • 1000:$0.5140
    • 1:$0.5350
    SISH410DN-T1-GE3
    DISTI # 99AC9583
    Vishay IntertechnologiesMOSFET, N-CH, 20V, 35A, 150DEG C, 52W,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power RoHS Compliant: Yes25
    • 500:$0.5970
    • 250:$0.6460
    • 100:$0.6950
    • 50:$0.7650
    • 25:$0.8350
    • 10:$0.9050
    • 1:$1.1000
    SISH410DN-T1-GE3
    DISTI # 78-SISH410DN-T1-GE3
    Vishay IntertechnologiesMOSFET 20V Vds,+/-20V Vgs PowerPAK 1212-8SH
    RoHS: Compliant
    5246
    • 1:$1.0800
    • 10:$0.8950
    • 100:$0.6870
    • 500:$0.5900
    • 1000:$0.4660
    • 3000:$0.4350
    • 6000:$0.4130
    • 9000:$0.3980
    SISH410DN-T1-GE3
    DISTI # 3019131
    Vishay IntertechnologiesMOSFET, N-CH, 20V, 35A, 150DEG C, 52W
    RoHS: Compliant
    25
    • 5000:$0.5800
    • 1000:$0.5920
    • 500:$0.7510
    • 250:$0.8400
    • 100:$0.9260
    • 25:$1.2500
    • 5:$1.3700
    SISH410DN-T1-GE3
    DISTI # 3019131
    Vishay IntertechnologiesMOSFET, N-CH, 20V, 35A, 150DEG C, 52W25
    • 500:£0.4320
    • 250:£0.4690
    • 100:£0.5040
    • 25:£0.6570
    • 5:£0.7320
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    Multilayer Ceramic Capacitors MLCC - Leaded RAD 250V 0.015uF X7R 10% LS:5mm
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    Mfr.#: DSC1001DL5-019.2000

    OMO.#: OMO-DSC1001DL5-019-2000-MICROCHIP-TECHNOLOGY

    Oscillator MEMS 19.2MHz ±10ppm (Stability) 15pF CMOS 55% 1.8V/2.5V/3.3V Automotive 4-Pin VDFN SMD Tube
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    OMO.#: OMO-LP5912Q3-3DRVRQ1-TEXAS-INSTRUMENTS

    LDO Voltage Regulators Automotive Ultra-Low-Noise 500-mA Linear Regulator for RF and Analog Circuits 6-SON -40 to 125
    TPS561201DDCR

    Mfr.#: TPS561201DDCR

    OMO.#: OMO-TPS561201DDCR-TEXAS-INSTRUMENTS

    IC REG BUCK ADJ 1A TSOT23-6
    CSD18543Q3A

    Mfr.#: CSD18543Q3A

    OMO.#: OMO-CSD18543Q3A-TEXAS-INSTRUMENTS

    60V N CH MOSFET
    UCLAMP2501T.TCT

    Mfr.#: UCLAMP2501T.TCT

    OMO.#: OMO-UCLAMP2501T-TCT-SEMTECH

    TVS DIODE 2.5V 7.5V SLP1006P2T
    可用性
    庫存:
    Available
    訂購:
    1987
    輸入數量:
    SISH410DN-T1-GE3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$1.08
    US$1.08
    10
    US$0.89
    US$8.95
    100
    US$0.69
    US$68.70
    500
    US$0.59
    US$295.00
    1000
    US$0.47
    US$466.00
    由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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