IAUT260N10S5N019ATMA1

IAUT260N10S5N019ATMA1
Mfr. #:
IAUT260N10S5N019ATMA1
製造商:
Infineon Technologies
描述:
MOSFET_(75V,120V(
生命週期:
製造商新產品
數據表:
IAUT260N10S5N019ATMA1 數據表
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產品屬性
屬性值
Tags
IAUT2, IAUT, IAU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
OptiMOS-5 Power Transistor MOSFET N-Channel 100V 260A 8-Pin PG-HSOF-1 T/R
***ical
Trans MOSFET N-CH 100V 260A Automotive 9-Pin(8+Tab) HSOF T/R
***ronik
N-CH 100V 260A 1,8mOhm HSOF-8
***i-Key
100V 260A 1.9MOHM TOLL
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); Ultra low Rds(on); 100% Avalanche tested
***ark
Mosfet, Aec-Q101, N-Ch, 100V, Hsof; Transistor Polarity:n Channel; Continuous Drain Current Id:260A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0016Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 100V, HSOF; Transistor Polarity:N Channel; Continuous Drain Current Id:260A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Transistor Case Style:HSOF; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, AEC-Q101, CA-N, 100V, HSOF; Polarità Transistor:Canale N; Corrente Continua di Drain Id:260A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0016ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:300W; Modello Case Transistor:HSOF; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS 5 Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
75V to 100V N-Channel Automotive MOSFETs
Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.
型號 製造商 描述 庫存 價格
IAUT260N10S5N019ATMA1
DISTI # V72:2272_19082749
Infineon Technologies AGOptiMOS -5 Power-Transistor2060
  • 1000:$2.6490
  • 500:$3.1820
  • 250:$3.6170
  • 100:$3.7880
  • 25:$3.9480
  • 10:$4.3870
  • 1:$5.6683
IAUT260N10S5N019ATMA1
DISTI # V36:1790_19082749
Infineon Technologies AGOptiMOS -5 Power-Transistor0
  • 2000000:$2.5660
  • 1000000:$2.5670
  • 200000:$2.6330
  • 20000:$2.7270
  • 2000:$2.7420
IAUT260N10S5N019ATMA1
DISTI # IAUT260N10S5N019ATMA1CT-ND
Infineon Technologies AG100V 260A 1.9MOHM TOLL
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
3581In Stock
  • 1000:$2.9725
  • 500:$3.5245
  • 100:$4.1402
  • 10:$5.0530
  • 1:$5.6300
IAUT260N10S5N019ATMA1
DISTI # IAUT260N10S5N019ATMA1DKR-ND
Infineon Technologies AG100V 260A 1.9MOHM TOLL
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
3581In Stock
  • 1000:$2.9725
  • 500:$3.5245
  • 100:$4.1402
  • 10:$5.0530
  • 1:$5.6300
IAUT260N10S5N019ATMA1
DISTI # IAUT260N10S5N019ATMA1TR-ND
Infineon Technologies AGMOSFET_(75V,120V(
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
2000In Stock
  • 2000:$2.7416
IAUT260N10S5N019ATMA1
DISTI # 29519584
Infineon Technologies AGOptiMOS -5 Power-Transistor2060
  • 3:$5.6683
IAUT260N10S5N019ATMA1
DISTI # SP001676336
Infineon Technologies AGOptiMOS-5 Power Transistor MOSFET N-Channel 100V 260A 8-Pin PG-HSOF-1 T/R (Alt: SP001676336)
RoHS: Compliant
Min Qty: 2000
Container: Tape and Reel
Europe - 2000
  • 20000:€2.3900
  • 12000:€2.5900
  • 8000:€2.7900
  • 4000:€2.8900
  • 2000:€3.0900
IAUT260N10S5N019ATMA1
DISTI # IAUT260N10S5N019ATMA1
Infineon Technologies AGOptiMOS-5 Power Transistor MOSFET N-Channel 100V 260A 8-Pin PG-HSOF-1 T/R - Tape and Reel (Alt: IAUT260N10S5N019ATMA1)
RoHS: Compliant
Min Qty: 2000
Container: Reel
Americas - 0
  • 20000:$2.6900
  • 12000:$2.7900
  • 8000:$2.8900
  • 4000:$2.9900
  • 2000:$3.0900
IAUT260N10S5N019ATMA1
DISTI # 59AC7034
Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 100V, HSOF,Transistor Polarity:N Channel,Continuous Drain Current Id:260A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0016ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes1218
  • 1000:$2.7700
  • 500:$3.2800
  • 250:$3.6700
  • 100:$3.8600
  • 50:$4.0600
  • 25:$4.2600
  • 10:$4.4500
  • 1:$5.2400
IAUT260N10S5N019ATMA1
DISTI # 726-IAUT260N10S5N01
Infineon Technologies AGMOSFET MOSFET_(75V,120V(
RoHS: Compliant
3676
  • 1:$5.1900
  • 10:$4.4100
  • 100:$3.8200
  • 250:$3.6300
  • 500:$3.2500
  • 1000:$2.7400
  • 2000:$2.6100
IAUT260N10S5N019ATMA1
DISTI # 2888479
Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 100V, HSOF3178
  • 500:£2.2400
  • 250:£2.5100
  • 100:£2.7700
  • 10:£3.4000
  • 1:£4.2300
IAUT260N10S5N019ATMA1
DISTI # 2888479
Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 100V, HSOF
RoHS: Compliant
1218
  • 1000:$4.0100
  • 500:$4.0900
  • 250:$4.3200
  • 100:$4.5600
  • 10:$5.1600
  • 1:$5.5200
圖片 型號 描述
IAUT260N10S5N019ATMA1

Mfr.#: IAUT260N10S5N019ATMA1

OMO.#: OMO-IAUT260N10S5N019ATMA1

MOSFET MOSFET_(75V,120V(
IAUT260N10S5N019

Mfr.#: IAUT260N10S5N019

OMO.#: OMO-IAUT260N10S5N019-1190

N-CH 100V 260A 1,8mOhm HSOF-8
IAUT260N10S5N019ATMA1

Mfr.#: IAUT260N10S5N019ATMA1

OMO.#: OMO-IAUT260N10S5N019ATMA1-INFINEON-TECHNOLOGIES

MOSFET_(75V,120V(
可用性
庫存:
Available
訂購:
4500
輸入數量:
IAUT260N10S5N019ATMA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$3.73
US$3.73
10
US$3.55
US$35.46
100
US$3.36
US$335.97
500
US$3.17
US$1 586.50
1000
US$2.99
US$2 986.40
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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