TPWR8503NL,L1Q

Mfr. #:: TPWR8503NL,L1Q
製造商:: Toshiba
描述:: MOSFET N-CH Mosfet 30V 150A 8DSOP
生命週期:: 製造商新產品
數據表:: TPWR8503NL,L1Q 數據表
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HTML Datasheet:: TPWR8503NL,L1Q Datasheet TPWR8503NL,L1Q Datasheet (P4-P6)TPWR8503NL,L1Q Datasheet (P7-P9)TPWR8503NL,L1Q Datasheet (P10)
ECAD Model:
更多信息:: TPWR8503NL,L1Q 更多信息

產品屬性
屬性值

製造商：: 東芝

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: DSOP-Advance-8

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 30 V

Id - 連續漏極電流：: 150 A

Rds On - 漏源電阻：: 1 mOhms

Vgs th - 柵源閾值電壓：: 1.3 V

Vgs - 柵源電壓：: 20 V

Qg - 門電荷：: 74 nC

最低工作溫度：: -

最高工作溫度：: -

Pd - 功耗：: 142 W

配置：: 單身的

頻道模式：: 增強

打包：: 捲軸

高度：: 0.73 mm

長度：: 5 mm

系列：: TPWR8503NL

晶體管類型：: 1 N-Channel

寬度：: 5 mm

品牌：: 東芝

秋季時間：: 15 ns

產品類別：: MOSFET

上升時間：: 9.6 ns

出廠包裝數量：: 5000

子類別：: MOSFET

典型關斷延遲時間：: 89 ns

典型的開啟延遲時間：: 23 ns

Tags: TPWR8503N, TPWR85, TPWR8, TPWR, TPW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TPWR8503NL,L1Q 描述

***et: Trans MOSFET N-CH 30V 150A 8-Pin DSOP

***enic: 30V 150A 0.85m¦¸@10V,50A 800mW 2.3V@1mA N Channel DSOP-8 MOSFETs ROHS

***i-Key: MOSFET N-CH 30V 150A 8DSOP

***: TRANS POWER MOSFET

***(Formerly Allied Electronics): MOSFET; N Ch.; 30V; 160A; 3.1 MOHM; 39 NC QG; D-PAK; Pb-Free

***ure Electronics: Single N-Channel 30 V 3.1 mOhm 39 nC HEXFET® Power Mosfet - TO-252AA

*** Source Electronics: Trans MOSFET N-CH 30V 160A 3-Pin(2+Tab) DPAK Tube / MOSFET N-CH 30V 160A DPAK

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***nell: MOSFET, N D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 160A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0031ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation

*** Stop Electro: Power Field-Effect Transistor, 160A I(D), 30V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ure Electronics: Single N-Channel 30 V 1.7 mOhm 74 nC HEXFET® Power Mosfet - DirectFET®

***ment14 APAC: MOSFET, N-CH, 30V, 180A, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Source Voltage Vds:30V; On Resistance

***ernational Rectifier: A 30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MT package rated at 32 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

***ark: MOSET TRANSISTOR; Transistor Type:MOSFET; Continuous Drain Current, Id:32A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.00122ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V; Power Dissipation, Pd:2.8W ;RoHS Compliant: Yes

***nell: MOSFET, N-CH, 30V, 180A, DIRECTFET MX; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.00122ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 89W; Transistor Case Style: DirectFET MX; No. of Pins: 7Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***et Europe: Trans MOSFET N-CH 30V 185A 8-Pin PQFN T/R

***ment14 APAC: MOSFET, N-CH, 185A, 30V, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:185A; Source Voltage Vds:30V; On Resistance

***r Electronics: Power Field-Effect Transistor, 185A I(D), 30V, 0.00123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

***nell: MOSFET, N-CH, 185A, 30V, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 185A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.00096ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.3V; Power Dissipation Pd: 64W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***emi: PowerTrench® MOSFET, N-Channel, 30V, 160A, 3.9mΩ

*** Stop Electro: Power Field-Effect Transistor, 21A I(D), 30V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***emi: N-Channel PowerTrench® MOSFET 30V, 174A, 1.3mΩ

***et Europe: Transistor MOSFET N-CH 30V 174A 8-Pin Power 33 T/R

***r Electronics: Power Field-Effect Transistor, 174A I(D), 174V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA

***nell: MOSFET, N-CH, 30V, 174A, 65W, POWER 33; Transistor Polarity: N Channel; Continuous Drain Current Id: 174A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0009ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 65W; Transistor Case Style: Power 33; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ultra low rDS(on) is required in small spaces such as High performance VRM, POL and Oring functions.

TPWR8503NL,L1Q 更多信息

TPW MOSFETs: Toshiba's TPW MOSFETs features 8-pin DSOP Advance packages for the U-MOSVIII-H and U-MOSIX-H Series MOSFETs. The are designed for high-efficiency DC-DC converters, switching voltage regulators and motor drivers. They deliver high-speed switching, a small gate charge, and low on-resistance.

Market price

型號	製造商	描述	庫存	價格
TPWR8503NL,L1Q(M DISTI # 30611258	Toshiba America Electronic Components	TPWR8503NL,L1Q(M	300	100:$2.2567 12:$2.2822
TPWR8503NL,L1Q DISTI # TPWR8503NLL1QCT-ND	Toshiba America Electronic Components	MOSFET N-CH 30V 150A 8DSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1946In Stock	1000:$1.4997 500:$1.7782 100:$2.1960 10:$2.6780 1:$3.0000
TPWR8503NL,L1Q DISTI # TPWR8503NLL1QDKR-ND	Toshiba America Electronic Components	MOSFET N-CH 30V 150A 8DSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1946In Stock	1000:$1.4997 500:$1.7782 100:$2.1960 10:$2.6780 1:$3.0000
TPWR8503NL,L1Q DISTI # TPWR8503NLL1QTR-ND	Toshiba America Electronic Components	MOSFET N-CH 30V 150A 8DSOP RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Temporarily Out of Stock	5000:$1.4560
TPWR8503NL,L1Q DISTI # V36:1790_13897616	Toshiba America Electronic Components	MOSFET N-CH 30V 150A 8DSOP	0
TPWR8503NL,L1Q DISTI # TPWR8503NL,L1Q	Toshiba America Electronic Components	Trans MOSFET N-CH 30V 150A 8-Pin DSOP - Tape and Reel (Alt: TPWR8503NL,L1Q) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$1.0379 30000:$1.0669 20000:$1.1259 10000:$1.1939 5000:$1.2689
TPWR8503NL,L1Q DISTI # 757-TPWR8503NLL1Q	Toshiba America Electronic Components	MOSFET N-CH Mosfet 30V 150A 8DSOP RoHS: Compliant	2207	1:$3.3500 10:$2.6900 100:$2.4500 250:$2.3500 500:$1.9900 1000:$1.6800 2500:$1.5900 5000:$1.5300
TPWR8503NL,L1Q	Toshiba America Electronic Components	MOSFET N-CH Mosfet 30V 150A 8DSOP RoHS: Compliant	Americas -
TPWR8503NLL1Q	Toshiba America Electronic Components	MOSFET POWER MOSFET TRANSISTOR RoHS: Compliant	Americas -

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