F3L150R07W2E3B11BOMA1

Mfr. #:: F3L150R07W2E3B11BOMA1
製造商:: Infineon Technologies
描述:: IGBT MODULE VCES 600V 150A
生命週期:: 製造商新產品
數據表:: F3L150R07W2E3B11BOMA1 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

Tags: F3L150R0, F3L150, F3L15, F3L1, F3L

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

F3L150R07W2E3B11BOMA1 描述

***ical: Trans IGBT Module N-CH 650V 150A 335000mW 20-Pin EASY2B-2 Tray

***ure Electronics: 650 V, 150 A EasyPACK 2B 3-level phase leg IGBT module

***et Europe: Trans IGBT Module N-CH 650V 150A 14-pin EASY2B-2

***ronik: IGBT-modul 650V 150A EasyPack2B

***i-Key: IGBT MODULE VCES 600V 150A

***omponent: Infineon power module

***et: LOW POWER EASY

***ark: Igbt, Module, N-Ch, 650V, 150A; Transistor Polarity:n Channel; Dc Collector Current:150A; Collector Emitter Saturation Voltage Vce(On):1.45V; Power Dissipation Pd:335W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. IGBT, MODULE, N-CH, 650V, 150A; Transistor Polarity:N Channel; DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):1.45V; Power Dissipation Pd:335W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:Module; No. of Pins:-; Operating Temperature Max:150°C; Product Range:-; SVHC:No SVHC (27-Jun-2018)

***nell: IGBT, MODULO, CA-N, 650V, 150A; Polarità Transistor:Canale N; Corrente di Collettore CC:150A; Tensione Saturaz Collettore-Emettitore Vce(on):1.45V; Dissipazione di Potenza Pd:335W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:Module; No. di Pin:-; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: EasyPACK 2B 650V 3-level phase leg IGBT module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode, NTC and PressFIT Contact Technology | Summary of Features: Increased blocking voltage capability to 650V; Low inductive design; Low Switching Losses; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Resistance; Compact Design; PressFIT Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; solar; ups

Market price

型號	製造商	描述	庫存	價格
F3L150R07W2E3B11BOMA1 DISTI # V99:2348_17558352	Infineon Technologies AG	Trans IGBT Module N-CH 650V 150A 335000mW 20-Pin Tray RoHS: Compliant	15	100:$59.1100 25:$64.0000 10:$71.1100 1:$79.0100
F3L150R07W2E3B11BOMA1 DISTI # F3L150R07W2E3B11BOMA1-ND	Infineon Technologies AG	IGBT MODULE VCES 600V 150A RoHS: Not compliant Min Qty: 15 Container: Bulk	Temporarily Out of Stock	15:$65.2260
F3L150R07W2E3B11BOMA1 DISTI # 30177381	Infineon Technologies AG	Trans IGBT Module N-CH 650V 150A 335000mW 20-Pin Tray RoHS: Compliant	15	15:$56.3880
F3L150R07W2E3B11BOMA1 DISTI # 32347530	Infineon Technologies AG	Trans IGBT Module N-CH 650V 150A 335000mW 20-Pin Tray RoHS: Compliant	15	100:$59.1100 25:$64.0000 10:$71.1100 1:$79.0100
F3L150R07W2E3B11BOMA1 DISTI # F3L150R07W2E3B11BOMA1	Infineon Technologies AG	LOW POWER EASY - Trays (Alt: F3L150R07W2E3B11BOMA1) RoHS: Compliant Min Qty: 15 Container: Tray	Americas - 0
F3L150R07W2E3_B11 DISTI # 641-F3L150R07W2E3B11	Infineon Technologies AG	IGBT Modules IGBT MODULES 650V 150A	54	1:$68.6600 5:$67.3900 10:$65.6500 25:$64.3600
F3L150R07W2E3B11BOMA1 DISTI # 2709947	Infineon Technologies AG	IGBT, MODULE, N-CH, 650V, 150A	0	50:£49.2700 10:£50.3200 5:£51.3700 1:£52.4200
F3L150R07W2E3B11BOMA1 DISTI # 2709947	Infineon Technologies AG	IGBT, MODULE, N-CH, 650V, 150A RoHS: Compliant	0	5:$92.3200 2:$95.6200 1:$99.1700

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