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SIHD7N60E-GE3

SIHD7N60E-GE3
Mfr. #:
SIHD7N60E-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET 600V Vds 30V Vgs DPAK (TO-252)
生命週期:
製造商新產品
數據表:
SIHD7N60E-GE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
SIHD7N60E-GE3 DatasheetSIHD7N60E-GE3 Datasheet (P4-P6)SIHD7N60E-GE3 Datasheet (P7-P9)SIHD7N60E-GE3 Datasheet (P10)
ECAD Model:
更多信息:
SIHD7N60E-GE3 更多信息
產品屬性
屬性值
製造商：
威世
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TO-252-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
600 V
Id - 連續漏極電流：
7 A
Rds On - 漏源電阻：
600 mOhms
Vgs th - 柵源閾值電壓：
4 V
Vgs - 柵源電壓：
30 V
Qg - 門電荷：
20 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
78 W
配置：
單身的
頻道模式：
增強
打包：
管子
系列：
E
品牌：
威世 / Siliconix
秋季時間：
14 ns
產品類別：
MOSFET
上升時間：
13 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
24 ns
典型的開啟延遲時間：
13 ns
單位重量：
0.050717 oz
Tags
SIHD7, SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK
***et Europe
Trans MOSFET N-CH 600V 7A 3-Pin DPAK
***ure Electronics
MOSFET 600V 600MOHM@10V 7A N-CH E-SRS
***ment14 APAC
MOSFET, N CH, 575V, 7A, TO-252-3
***i-Key
MOSFET N-CH 600V 7A TO-252
***ark
N-CHANNEL 600V
***nell
MOSFET, N-CH, 600V, 7A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
型號 製造商 描述 庫存 價格
SIHD7N60E-GE3
DISTI # V99:2348_09218416		Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK
RoHS: Compliant		3000
  • 5000:$0.8775
  • 2500:$0.9173
  • 1000:$0.9386
  • 500:$1.1127
  • 100:$1.2602
  • 10:$1.6590
  • 1:$2.1913
SIHD7N60E-GE3
DISTI # V36:1790_09218416		Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK
RoHS: Compliant		0
  • 3000000:$0.8836
  • 1500000:$0.8861
  • 300000:$1.1050
  • 30000:$1.4870
  • 3000:$1.5500
SIHD7N60E-GE3
DISTI # SIHD7N60E-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 7A TO-252
RoHS: Compliant
Min Qty: 1
Container: Bulk		1355In Stock
  • 5000:$0.8845
  • 2500:$0.9185
  • 1000:$0.9866
  • 500:$1.1907
  • 100:$1.4493
  • 10:$1.8030
  • 1:$2.0100
SIHD7N60E-GE3
DISTI # 27527136		Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK
RoHS: Compliant		3000
  • 7:$2.1913
SIHD7N60E-GE3
DISTI # SIHD7N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin DPAK (Alt: SIHD7N60E-GE3)
RoHS: Compliant
Min Qty: 3000		Europe - 2475
  • 30000:€0.7659
  • 18000:€0.8009
  • 12000:€0.9059
  • 6000:€1.1169
  • 3000:€1.5569
SIHD7N60E-GE3
DISTI # SIHD7N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 7A 3-Pin DPAK - Tape and Reel (Alt: SIHD7N60E-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
    SIHD7N60E-GE3
    DISTI # 63W4108    		Vishay IntertechnologiesPower MOSFET, N Channel, 7 A, 650 V, 0.5 ohm, 10 V, 2 V RoHS Compliant: Yes2593
    • 500:$1.1400
    • 100:$1.3000
    • 50:$1.4300
    • 25:$1.5600
    • 10:$1.6900
    • 1:$2.0300
    SIHD7N60E-GE3
    DISTI # 78-SIHD7N60E-GE3    		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs DPAK (TO-252)
    RoHS: Compliant    		1048
    • 1:$2.0100
    • 10:$1.6700
    • 100:$1.2900
    • 500:$1.1300
    SIHD7N60E-E3
    DISTI # 78-SIHD7N60E-E3    		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs DPAK (TO-252)
    RoHS: Compliant    		0
    • 3000:$0.8750
    • 6000:$0.8430
    • 9000:$0.8100
    SIHD7N60E-GE3
    DISTI # 2283642    		Vishay IntertechnologiesMOSFET, N-CH, 600V, 7A, DPAK
    RoHS: Compliant    		2293
    • 5000:$1.3700
    • 2500:$1.3900
    • 1000:$1.4900
    • 500:$1.8000
    • 100:$2.1900
    • 10:$2.7200
    • 1:$3.0300
    SIHD7N60E-GE3
    DISTI # 2283642    		Vishay IntertechnologiesMOSFET, N-CH, 600V, 7A, DPAK2304
    • 500:£0.7760
    • 250:£0.8330
    • 100:£0.8880
    • 25:£1.1500
    • 5:£1.3900
    SIHD7N60E-GE3
    DISTI # XSKDRABV0041556    		Vishay Intertechnologies 
    RoHS: Compliant    		2400 in Stock0 on Order
    • 2400:$1.0700
    • 435:$1.1500
    SIHD7N60EGE3Vishay IntertechnologiesPower Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    RoHS: Compliant    		3000
      SIHD7N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs DPAK (TO-252)
      RoHS: Compliant      		Americas - 3000
      • 50:$1.2450
      • 100:$1.1020
      • 250:$1.0020
      • 500:$0.9800
      • 1000:$0.9260
      圖片 型號 描述
      BAV99,215

      Mfr.#: BAV99,215

      OMO.#: OMO-BAV99-215

      		 Diodes - General Purpose, Power, Switching SW DBL 100V 215MA HS
      RC1206JR-072K7L

      Mfr.#: RC1206JR-072K7L

      OMO.#: OMO-RC1206JR-072K7L

      		 Thick Film Resistors - SMD 2.7K OHM 5%
      ERA-3AEB1651V

      Mfr.#: ERA-3AEB1651V

      OMO.#: OMO-ERA-3AEB1651V

      		 Thin Film Resistors - SMD 0603 1.65Kohm 0.1% 25ppm
      MH1608-601Y

      Mfr.#: MH1608-601Y

      OMO.#: OMO-MH1608-601Y

      		 Ferrite Beads 600 ohms 25% HIGH CURRENT
      ERA-3AEB1822V

      Mfr.#: ERA-3AEB1822V

      OMO.#: OMO-ERA-3AEB1822V-PANASONIC

      		 Thin Film Resistors - SMD 0603 18.2Kohm 0.1% 25ppm
      ERA-3AEB1652V

      Mfr.#: ERA-3AEB1652V

      OMO.#: OMO-ERA-3AEB1652V-PANASONIC

      		 Thin Film Resistors - SMD 0603 16.5Kohm 0.1% 25ppm
      CRCW2512357RFKEG

      Mfr.#: CRCW2512357RFKEG

      OMO.#: OMO-CRCW2512357RFKEG-VISHAY-DALE

      		 Thick Film Resistors - SMD 1watt 357ohms 1%
      CRCW060350R0FKEA

      Mfr.#: CRCW060350R0FKEA

      OMO.#: OMO-CRCW060350R0FKEA-VISHAY-DALE

      		 Thick Film Resistors - SMD 1/10watt 50ohms 1% Non Std Qt Req'd
      MH1608-601Y

      Mfr.#: MH1608-601Y

      OMO.#: OMO-MH1608-601Y-BOURNS

      		 EMI Filter Beads, Chips & Arrays 600uH 25% HIGH CURRENT
      BAV99,215

      Mfr.#: BAV99,215

      OMO.#: OMO-BAV99-215-NEXPERIA

      		 DIODE ARRAY GP 100V 215MA SOT23
      可用性
      庫存:
      Available
      訂購:
      1984
      輸入數量:
      SIHD7N60E-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格（美元）
      數量
      單價
      小計金額
      1
      US$2.01
      US$2.01
      10
      US$1.67
      US$16.70
      100
      US$1.29
      US$129.00
      500
      US$1.13
      US$565.00
      由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
      從...開始
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