AS4C8M32MD2A-25BCNTR

AS4C8M32MD2A-25BCNTR
Mfr. #:
AS4C8M32MD2A-25BCNTR
製造商:
Alliance Memory
描述:
DRAM 256M 1.2/1.8V 8Mx32 LPDDR2 -25C-95C
生命週期:
製造商新產品
數據表:
AS4C8M32MD2A-25BCNTR 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
AS4C8M32MD2A-25BCNTR 更多信息
產品屬性
屬性值
製造商:
聯盟記憶
產品分類:
動態隨機存取存儲器
RoHS:
Y
類型:
SDRAM Mobile - LPDDR2
數據總線寬度:
32 bit
組織:
8 M x 32
包裝/案例:
FBGA-134
內存大小:
256 Mbit
最大時鐘頻率:
400 MHz
電源電壓 - 最大值:
1.95 V
電源電壓 - 最小值:
1.14 V
電源電流 - 最大值:
140 mA
最低工作溫度:
- 25 C
最高工作溫度:
+ 85 C
系列:
AS4C8M32MD2A-25
打包:
捲軸
品牌:
聯盟記憶
安裝方式:
貼片/貼片
濕氣敏感:
是的
產品類別:
動態隨機存取存儲器
出廠包裝數量:
1000
子類別:
內存和數據存儲
Tags
AS4C8M32MD, AS4C8M32M, AS4C8M3, AS4C8, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
DDR2 SDRAM
Alliance Memory DDR2 SDRAM is designed to comply with DDR2 SDRAM key features. Features such as posted CAS# with additive latency, Write latency=Read latency -1 and On-Die Termination (ODT). All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS#) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in RAS #, CAS# multiplexing style.
Low-Power DDR2 SDRAM
Alliance Memory Low-Power DDR2 SDRAM are high-speed CMOS and dynamic-access memory that are internally configured as a 8-bank memory device. These DDR2 SDRAM feature 4-bit pre-fetch DDR architecture, programmable READ and WRITE latencies, auto Temperature Compensated Self Refresh (TCSR), and clock stop capability. The DDR2 SDRAM reduces the number of input pins in the system by using a double data rate architecture on the Command/Address (CA) bus. This CA bus is used to transmit address, command, and bank information. These DDR2 SDRAM can achieve high-speed operation by using a double data rate architecture on the DQ (bidirectional/differential data bus) pins.
圖片 型號 描述
AS4C8M32MD2A-25BCNTR

Mfr.#: AS4C8M32MD2A-25BCNTR

OMO.#: OMO-AS4C8M32MD2A-25BCNTR

DRAM 256M 1.2/1.8V 8Mx32 LPDDR2 -25C-95C
AS4C8M32MD2A-25BPCN

Mfr.#: AS4C8M32MD2A-25BPCN

OMO.#: OMO-AS4C8M32MD2A-25BPCN

DRAM 256M 1.2/1.8V 32Mx32 Mobile DDR2 E-Temp
AS4C8M32MD2A-25BCN

Mfr.#: AS4C8M32MD2A-25BCN

OMO.#: OMO-AS4C8M32MD2A-25BCN

DRAM 256M 1.2/1.8V 400MHz 8Mx32 LPDDR2 E-Temp
AS4C8M32MD2A-25BPCN

Mfr.#: AS4C8M32MD2A-25BPCN

OMO.#: OMO-AS4C8M32MD2A-25BPCN-1190

256M 8M X 32 LPDDR2 1.2V 168 POP Extended temp
AS4C8M32MD2A-25BCN

Mfr.#: AS4C8M32MD2A-25BCN

OMO.#: OMO-AS4C8M32MD2A-25BCN-ALLIANCE-MEMORY

134-BALL FBGA (10X11.5X1.0)
可用性
庫存:
Available
訂購:
3500
輸入數量:
AS4C8M32MD2A-25BCNTR的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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