MRF6V2150NBR1

Mfr. #:: MRF6V2150NBR1
製造商:: NXP / Freescale
描述:: RF MOSFET Transistors VHV6 150W
生命週期:: 製造商新產品
數據表:: MRF6V2150NBR1 數據表
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更多信息:: MRF6V2150NBR1 更多信息

產品屬性
屬性值

製造商：: 恩智浦

產品分類：: 射頻 MOSFET 晶體管

RoHS：: E

晶體管極性：: N通道

技術：: 矽

Vds - 漏源擊穿電壓：: 110 V

獲得：: 25 dB

輸出功率：: 150 W

最低工作溫度：: - 65 C

最高工作溫度：: + 150 C

安裝方式：: 貼片/貼片

包裝/案例：: TO-272-4

打包：: 捲軸

配置：: 單雙漏雙柵極

高度：: 2.64 mm

長度：: 23.67 mm

工作頻率：: 220 MHz

系列：: MRF6V2150N

類型：: 射頻功率MOSFET

寬度：: 9.07 mm

品牌：: 恩智浦/飛思卡爾

頻道模式：: 增強

濕氣敏感：: 是的

產品類別：: 射頻 MOSFET 晶體管

出廠包裝數量：: 500

子類別：: MOSFET

Vgs - 柵源電壓：: - 0.5 V, 12 V

Vgs th - 柵源閾值電壓：: 1.62 V

第 # 部分別名：: 935316841528

單位重量：: 0.067412 oz

Tags: MRF6V2150NBR, MRF6V2150NB, MRF6V2150N, MRF6V21, MRF6V2, MRF6V, MRF6, MRF

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MRF6V2150NBR1 評級和評論

L***v

SUPER

2019-03-31

K***S

Order not dotarło

2019-02-24

MRF6V2150NBR1 描述

***W: RF Power Transistor,10 to 450 MHz, 150 W, Typ Gain in dB is 25 @ 220 MHz, 50 V, LDMOS, SOT1735

*** Semiconductors SCT: Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 V, FM4F

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:2.5mA; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.62V; Package/Case:TO-272 ;RoHS Compliant: Yes

***nell: TRANSISTOR, RF, 110V, TO-272; Drain Source Voltage Vds: 110V; Continuous Drain Current Id: -; Power Dissipation Pd: 150W; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-272; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

***escale Semiconductor: Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V

***et: Power LDMOS Transistor N-Channel 110V 5-Pin TO-270 WB EP T/R

***ical: Trans RF MOSFET N-CH 110V 5-Pin TO-270 W T/R

***or: RF ULTRA HIGH FREQUENCY BAND, N-

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:2.5mA; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.63V; Package/Case:4-TO-270 ;RoHS Compliant: Yes

***W: RF Power Transistor,10 to 450 MHz, 10 W, Typ Gain in dB is 23.9 @ 220 MHz, 50 V, LDMOS, SOT1732

*** Semiconductors SCT: Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F

***nell: TRANSISTOR, RF, 110V, TO-270-2; Drain Source Voltage Vds: 110VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

*** Semiconductors SCT: Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F

***et: Transistor RF FET N-CH 110V 10MHz to 450MHz 2-Pin TO-272 T/R

*** Electronic Components: RF MOSFET Transistors VHV6 10W TO272-2N

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:50µA; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.68V; Package/Case:TO-272 ;RoHS Compliant: Yes

***(Formerly Allied Electronics): IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223

***eco: Trans MOSFET N Channel 100 Volt 1.5A 4-Pin (3+Tab) SOT-223 Tape and Reel

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3

*** Source Electronics: Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223

***nsix Microsemi: Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***hard Electronics: Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No

***ment14 APAC: MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252

***ical: Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R

***ment14 APAC: MOSFET, N-CH, 100V, 4.3A, TO-252AA

*** Services: CoC and 2-years warranty / RFQ for pricing

***S: French Electronic Distributor since 1988

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: No

MRF6V2150NBR1 更多信息

MRF6Vx Lateral N-Ch Broadband RF Power MOSFETs: NXP's MRF6Vx Lateral N-Channel Broadband RF Power MOSFETs are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. They can be used single-ended or in a push-pull configuration and are suitable for linear applications with appropriate biasing. These RF MOSFETs are capable of handling a load mismatch of 65:1 VSWR, a 50 VDC, 230 MHz at all phase angles.Learn More

Market price

型號	製造商	描述	庫存	價格
MRF6V2150NBR1 DISTI # 24346163	NXP Semiconductors	Trans RF MOSFET N-CH 110V 5-Pin TO-272 W T/R RoHS: Compliant	720	2:$63.2500
MRF6V2150NBR1 DISTI # 30289379	NXP Semiconductors	Trans RF MOSFET N-CH 110V 5-Pin TO-272 W T/R RoHS: Compliant	60	2:$63.2500
MRF6V2150NBR1 DISTI # MRF6V2150NBR1CT-ND	NXP Semiconductors	FET RF 110V 220MHZ TO-272-4 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1035In Stock	100:$52.5772 10:$58.6290 1:$62.4100
MRF6V2150NBR1 DISTI # MRF6V2150NBR1DKR-ND	NXP Semiconductors	FET RF 110V 220MHZ TO-272-4 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1035In Stock	100:$52.5772 10:$58.6290 1:$62.4100
MRF6V2150NBR1 DISTI # MRF6V2150NBR1TR-ND	NXP Semiconductors	FET RF 110V 220MHZ TO-272-4 RoHS: Compliant Min Qty: 500 Container: Tape & Reel (TR)	1000In Stock	500:$48.8424
MRF6V2150NBR1 DISTI # C1S233100141647	NXP Semiconductors	Trans RF MOSFET N-CH 110V 5-Pin TO-272 WB EP T/R RoHS: Compliant	720	50:$61.2000 25:$61.9000 10:$62.5000 5:$71.8000 1:$87.0000
MRF6V2150NBR1 DISTI # MRF6V2150NBR1	Avnet, Inc.	Trans MOSFET N-CH 110V 5-Pin TO-272 WB EP T/R - Tape and Reel (Alt: MRF6V2150NBR1) RoHS: Compliant Min Qty: 500 Container: Reel	Americas - 0	500:$53.4900 1000:$51.3900 2000:$49.3900 3000:$47.5900 5000:$46.6900
MRF6V2150NBR1 DISTI # 45AC7382	NXP Semiconductors	TRANSISTOR, RF, 110V, TO-272,Drain Source Voltage Vds:110V,Continuous Drain Current Id:-,Power Dissipation Pd:150W,Operating Frequency Min:10MHz,Operating Frequency Max:450MHz,RF Transistor Case:TO-272,No. of Pins:4Pins,RoHS Compliant: Yes	386	1:$60.9600 10:$57.6900 25:$54.7500 50:$52.9200 100:$48.5600 250:$47.1200 500:$45.6500
MRF6V2150NBR1 DISTI # 47M2187	NXP Semiconductors	RF MOSFET, N CHANNEL, 110V, TO-272, FULL REEL,Drain Source Voltage Vds:110V,Continuous Drain Current Id:2.5mA,Power Dissipation Pd:150W,Operating Frequency Min:10MHz,Operating Frequency Max:450MHz,RF Transistor Case:TO-272 RoHS Compliant: Yes	0	1:$73.4500
MRF6V2150NBR1 DISTI # 841-MRF6V2150NBR1	NXP Semiconductors	RF MOSFET Transistors VHV6 150W RoHS: Compliant	0	500:$47.3800
MRF6V2150NBR5 DISTI # 841-MRF6V2150NBR5	NXP Semiconductors	RF MOSFET Transistors VHV6 150W Latrl N-Ch SE Broadband MOSFET RoHS: Compliant	0
MRF6V2150NBR1 DISTI # MRF6V2150NBR1	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	2298	1:$63.2100 10:$58.4200 25:$56.7100
MRF6V2150NBR1 DISTI # 2820249	NXP Semiconductors	TRANSISTOR, RF, 110V, TO-272 RoHS: Compliant	386	1:£49.8000 5:£48.2900 10:£46.7800 50:£41.9500
MRF6V2150NBR1 DISTI # 2820249	NXP Semiconductors	TRANSISTOR, RF, 110V, TO-272 RoHS: Compliant	386	1:$87.7600 5:$84.8300 10:$80.7900 50:$78.3100

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