SI7962DP-T1-E3

SI7962DP-T1-E3
Mfr. #:
SI7962DP-T1-E3
製造商:
Vishay
描述:
RF Bipolar Transistors MOSFET DUAL N-CH 40V (D-S) HIGH THRESHOLD
生命週期:
製造商新產品
數據表:
SI7962DP-T1-E3 數據表
交貨:
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支付:
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ECAD Model:
產品屬性
屬性值
製造商
威世矽
產品分類
FET - 陣列
系列
溝槽FETR
打包
Digi-ReelR 替代包裝
部分別名
SI7962DP-E3
單位重量
0.017870 oz
安裝方式
貼片/貼片
包裝盒
PowerPAKR SO-8 Dual
技術
工作溫度
-55°C ~ 150°C (TJ)
安裝型
表面貼裝
通道數
2 Channel
供應商-設備-包
PowerPAKR SO-8 Dual
配置
雙重的
FET型
2 N-Channel (Dual)
最大功率
1.4W
晶體管型
2 N-Channel
漏源電壓 Vdss
40V
輸入電容-Ciss-Vds
-
FET-Feature
標準
Current-Continuous-Drain-Id-25°C
7.1A
Rds-On-Max-Id-Vgs
17 mOhm @ 11.1A, 10V
Vgs-th-Max-Id
4.5V @ 250μA
柵極電荷-Qg-Vgs
70nC @ 10V
鈀功耗
1.4 W
最高工作溫度
+ 150 C
最低工作溫度
- 55 C
秋季時間
15 ns
上升時間
15 ns
VGS-柵極-源極-電壓
20 V
Id 連續漏極電流
7.1 A
Vds-漏-源-擊穿電壓
40 V
Rds-On-Drain-Source-Resistance
17 mOhms
晶體管極性
N通道
典型關斷延遲時間
55 ns
典型開啟延遲時間
22 ns
通道模式
增強
Tags
SI7962, SI796, SI79, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET 2N-CH 40V 7.1A PPAK SO-8
***ark
Transistor; Continuous Drain Current, Id:11100mA; Drain Source Voltage, Vds:40V; On Resistance, Rds(on):0.017ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:4.5V; Power Dissipation, Pd:1.4W ;RoHS Compliant: Yes
型號 製造商 描述 庫存 價格
SI7962DP-T1-E3
DISTI # SI7962DP-T1-E3TR-ND
Vishay SiliconixMOSFET 2N-CH 40V 7.1A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$1.8873
SI7962DP-T1-E3
DISTI # 781-SI7962DP-T1-E3
Vishay IntertechnologiesMOSFET DUAL N-CH 40V (D-S) HIGH THRESHOLD
RoHS: Compliant
0
  • 3000:$1.7200
圖片 型號 描述
SI7962DP-T1-E3

Mfr.#: SI7962DP-T1-E3

OMO.#: OMO-SI7962DP-T1-E3

MOSFET DUAL N-CH 40V (D-S) HIGH THRESHOLD
SI7962DP-T1-GE3

Mfr.#: SI7962DP-T1-GE3

OMO.#: OMO-SI7962DP-T1-GE3

MOSFET 40V 11.1A 3.5W 17mohm @ 10V
SI7962DP-T1-GE3

Mfr.#: SI7962DP-T1-GE3

OMO.#: OMO-SI7962DP-T1-GE3-317

RF Bipolar Transistors MOSFET 40V 11.1A 3.5W 17mohm @ 10V
SI7962DP-T1-E3

Mfr.#: SI7962DP-T1-E3

OMO.#: OMO-SI7962DP-T1-E3-VISHAY

RF Bipolar Transistors MOSFET DUAL N-CH 40V (D-S) HIGH THRESHOLD
可用性
庫存:
Available
訂購:
3000
輸入數量:
SI7962DP-T1-E3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$2.58
US$2.58
10
US$2.45
US$24.51
100
US$2.32
US$232.20
500
US$2.19
US$1 096.50
1000
US$2.06
US$2 064.00
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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