IKD04N60RATMA1

IKD04N60RATMA1
Mfr. #:
IKD04N60RATMA1
製造商:
Infineon Technologies
描述:
IGBT Transistors IGBT w/ INTG DIODE 600V 8A
生命週期:
製造商新產品
數據表:
IKD04N60RATMA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商:
英飛凌
產品分類:
IGBT晶體管
RoHS:
Y
技術:
包裝/案例:
TO-252-3
安裝方式:
貼片/貼片
配置:
單身的
集電極-發射極電壓 VCEO 最大值:
600 V
集電極-發射極飽和電壓:
1.65 V
最大柵極發射極電壓:
20 V
25 C 時的連續集電極電流:
8 A
Pd - 功耗:
75 W
最低工作溫度:
- 40 C
最高工作溫度:
+ 175 C
系列:
RC
打包:
捲軸
品牌:
英飛凌科技
柵極-發射極漏電流:
100 nA
產品類別:
IGBT晶體管
出廠包裝數量:
2500
子類別:
IGBT
商品名:
戰壕
第 # 部分別名:
IKD04N60R SP000964626
Tags
IKD04N60RA, IKD04N60R, IKD04N, IKD04, IKD0, IKD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 8A 75000mW Automotive 3-Pin(2+Tab) DPAK T/R
***ineon SCT
RC-Drives IGBT technology has been developed by Infineon as a cost optimized solution for sensitive consumer drives market, PG-TO252-3, RoHS
***nell
IGBT+ DIODE,600V,4A,TO252; DC Collector Current: 4A; Collector Emitter Saturation Voltage Vce(on): 2.1V; Power Dissipation Pd: 75W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; O
***ineon
RC-Drives IGBT technology has been developed by Infineon as a cost optimized solution for sensitive consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless DC motor drives. | Summary of Features: Optimized parameters for up to 20% lower switching losses; Operating range of DC to 30kHz; Max junction temperature 175C; Short circuit capability of 5s; Very tight parameter distribution; Best in class current versus package size performance; Smooth switching performance leading to low EMI levels | Benefits: Excellent cost/performance for hard switching applications; Outstanding temperature stability; Very good EMI behavior; Up to 60% space saving on the PCB; Higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching | Target Applications: Fridge compressors; Pumps & Drives; Fans; Home Appliance; Industrial drives; Air Conditioner
***-Wing Technology
Tape & Reel (TR) Surface Mount N-CHANNEL SINGLE IGBT Transistor 2.6V @ 15V 3A 6A 30W 15ns/60ns
*** Electronic Components
IGBT Transistors Dis High Perf IGBT
***inecomponents.com
Discrete, High Performance IGBT
***rchild Semiconductor
Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
***-Wing Technology
Tape & Reel (TR) Surface Mount N-CHANNEL SINGLE IGBT Transistor 2.6V @ 15V 3A 6A 30W 15ns/60ns
***i-Key
IGBT 600V 6A 30W DPAK
*** Electronic Components
IGBT Transistors 600V/3A
***ser
IGBTs 600V/3A
***i-Key Marketplace
N-CHANNEL IGBT
***el Nordic
Contact for details
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 220pF 100volts C0G +/-5% Hi Rel
***r Electronics
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA
***ser
IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 3.0 A
*** Electronic Components
IGBT Transistors N-Ch 600 Volt 3.0 A
***ical
Trans IGBT Chip N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
***emi
IGBT, 600V, 3A, Short Circuit Rated
*** Stop Electro
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252
***S
French Electronic Distributor since 1988
***rchild Semiconductor
Using advanced NPT IGBT Technology, Fairchild’s the NPT IGBTs offer the optimum performance for low power inverter-driven applications where low-losses and short circuit ruggedness feature are essential.
***ical
Trans IGBT Chip N-CH 600V 9A 38000mW 3-Pin(2+Tab) DPAK T/R
***ure Electronics
IRG4RC10K Series 600 V 9 A Surface Mount UltraFast Speed IGBT - TO-252AA
***(Formerly Allied Electronics)
IGBT, N-Channel, 600V, 8.5A, D-Pak TO-252AA | Infineon IRG4RC10KDTRPBF
***nell
IGBT, COPAK, D-PAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:9A; Voltage, Vce Sat Max:2.39V; Power Dissipation:38W; Case Style:D-PAK; Termination Type:SMD; Alternate Case Style:TO-252; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:18A; Power, Pd:38W; Time, Rise:24ns
***-Wing Technology
Tape & Reel (TR) Surface Mount ROHS3Compliant IGBT Transistor 2.6V @ 15V 5A 8.5A 38W 28ns
***ical
Trans IGBT Chip N-CH 600V 8.5A 38000mW 3-Pin(2+Tab) DPAK T/R
***(Formerly Allied Electronics)
600V ULTRAFAST 8-60 KHZ COPACK IGBT IN A D-PAK PACKAGE | Infineon IRG4RC10UDPBF
***nell
IGBT, D-PAK; DC Collector Current: 8.5A; Collector Emitter Saturation Voltage Vce(on): 2.6V; Power Dissipation Pd: 38W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Ic Continuous a Max: 5A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Power Dissipation Max: 38W; Pulsed Current Icm: 34A; Rise Time: 16ns; Termination Type: Surface Mount Device; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V
型號 製造商 描述 庫存 價格
IKD04N60RATMA1
DISTI # V72:2272_06384328
Infineon Technologies AGTrans IGBT Chip N-CH 600V 8A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
2473
  • 1000:$0.4414
  • 500:$0.5326
  • 250:$0.6085
  • 100:$0.6147
  • 25:$0.8064
  • 10:$0.8959
  • 1:$1.0580
IKD04N60RATMA1
DISTI # V36:1790_06384328
Infineon Technologies AGTrans IGBT Chip N-CH 600V 8A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
0
  • 2500000:$0.4214
  • 1250000:$0.4218
  • 250000:$0.4564
  • 25000:$0.5209
  • 2500:$0.5319
IKD04N60RATMA1
DISTI # IKD04N60RATMA1CT-ND
Infineon Technologies AGIGBT 600V 8A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    IKD04N60RATMA1
    DISTI # IKD04N60RATMA1DKR-ND
    Infineon Technologies AGIGBT 600V 8A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      IKD04N60RATMA1
      DISTI # IKD04N60RATMA1TR-ND
      Infineon Technologies AGIGBT 600V 8A TO252-3
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
      • 2500:$0.5319
      IKD04N60RATMA1
      DISTI # 26195432
      Infineon Technologies AGTrans IGBT Chip N-CH 600V 8A Automotive 3-Pin(2+Tab) DPAK T/R
      RoHS: Compliant
      2473
      • 14:$1.0580
      IKD04N60RATMA1
      DISTI # IKD04N60RATMA1
      Infineon Technologies AGTrans IGBT Chip N-CH 600V 8A 3-Pin TO-252 T/R - Bulk (Alt: IKD04N60RATMA1)
      Min Qty: 807
      Container: Bulk
      Americas - 0
      • 8070:$0.3929
      • 4035:$0.4009
      • 2421:$0.4139
      • 1614:$0.4299
      • 807:$0.4459
      IKD04N60RATMA1
      DISTI # IKD04N60RATMA1
      Infineon Technologies AGTrans IGBT Chip N-CH 600V 8A 3-Pin TO-252 T/R - Tape and Reel (Alt: IKD04N60RATMA1)
      RoHS: Compliant
      Min Qty: 2500
      Container: Reel
      Americas - 0
      • 25000:$0.4589
      • 15000:$0.4679
      • 10000:$0.4839
      • 5000:$0.5019
      • 2500:$0.5209
      IKD04N60RATMA1
      DISTI # SP000964626
      Infineon Technologies AGTrans IGBT Chip N-CH 600V 8A 3-Pin TO-252 T/R (Alt: SP000964626)
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape and Reel
      Europe - 0
      • 25000:€0.4049
      • 15000:€0.4359
      • 10000:€0.4729
      • 5000:€0.5159
      • 2500:€0.6299
      IKD04N60RATMA1
      DISTI # 726-IKD04N60RATMA1
      Infineon Technologies AGIGBT Transistors IGBT w/ INTG DIODE 600V 8A
      RoHS: Compliant
      1574
      • 1:$0.9700
      • 10:$0.8280
      • 100:$0.6360
      • 500:$0.5620
      • 1000:$0.4440
      • 2500:$0.3940
      • 10000:$0.3790
      IKD04N60RATMA1Infineon Technologies AGInfineon Discrete IGBT without Anti-Parallel DiodeIKD04N60RA - TO252-3
      RoHS: Not Compliant
      2319
      • 1000:$0.4100
      • 500:$0.4300
      • 100:$0.4500
      • 25:$0.4700
      • 1:$0.5000
      IKD04N60RATMA1
      DISTI # IKD04N60R
      Infineon Technologies AG600V 8A 75W TO252
      RoHS: Compliant
      0
      • 5:€1.3200
      • 50:€0.7200
      • 200:€0.4200
      • 500:€0.4000
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      可用性
      庫存:
      Available
      訂購:
      1984
      輸入數量:
      IKD04N60RATMA1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格(美元)
      數量
      單價
      小計金額
      1
      US$0.97
      US$0.97
      10
      US$0.83
      US$8.28
      100
      US$0.64
      US$63.60
      500
      US$0.56
      US$281.00
      1000
      US$0.44
      US$444.00
      由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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