STB32N65M5

Mfr. #:: STB32N65M5
製造商:: STMicroelectronics
描述:: MOSFET N-CH 650V 24A D2PAK
生命週期:: 製造商新產品
數據表:: STB32N65M5 數據表
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更多信息:: STB32N65M5 更多信息 STB32N65M5 Product Details

產品屬性
屬性值

製造商: 意法半導體

產品分類: 晶體管 - FET、MOSFET - 單

系列: MDmesh M5

打包: 捲軸

單位重量: 0.139332 oz

安裝方式: 貼片/貼片

包裝盒: TO-252-3

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 150 W

最高工作溫度: + 150 C

秋季時間: 16 ns

上升時間: 12 ns

VGS-柵極-源極-電壓: +/- 25 V

Id 連續漏極電流: 24 A

Vds-漏-源-擊穿電壓: 650 V

VGS-th-Gate-Source-Threshold-Voltage: 4 V

Rds-On-Drain-Source-Resistance: 95 mOhms

晶體管極性: N通道

典型關斷延遲時間: 56 ns

典型開啟延遲時間: 53 ns

Qg-門電荷: 72 nC

Tags: STB32, STB3, STB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STB32N65M5 描述

***Components: N-Channel MOSFET, 24 A, 650 V, 3-Pin D2PAK STMicroelectronics STB32N65M5

***ure Electronics: N-Channel 650 V 24 A 119 mOhm 150 W Surface Mount MDmesh Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH Si 650V 24A 3-Pin(2+Tab) D2PAK T/R

***p One Stop Global: Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK T/R

***ied Electronics & Automation: MOSFET N-Channel 650V 24A D2PAK

***ronik: MOSFET 650V 120mOhm 24A TO263 RoHSconf

***i-Key: MOSFET N-CH 650V 24A D2PAK

***ark: MOSFET, N CH, 650V, 24A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.095ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N CH, 650V, 24A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.095ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015)

***nell: MOSFET, CANALE N, 650V, 24A, D2PAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:24A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.095ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:150W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)

STB32N65M5 更多信息

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

N-channel MDmesh V Power MOSFET: STMicroelectronics 550 and 650V MDmesh M5 series of super-junction Power MOSFETs offer outstanding RDS(on) values to significantly reduce losses in line-voltage PFC circuits and power supplies. This in turn enables new generations of electronic products offering greater energy savings, superior power density, and more compact applications. This new technology will help product designers tackle emerging challenges such as the high-efficiency targets of new eco-design directives, and will also benefit the renewable energy sector by saving vital watts normally lost in power-control modules.

Market price

型號	製造商	描述	庫存	價格
STB32N65M5 DISTI # 497-10564-1-ND	STMicroelectronics	MOSFET N-CH 650V 24A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	526In Stock	500:$6.0851 100:$7.2628 10:$8.8330 1:$9.8100
STB32N65M5 DISTI # 497-10564-6-ND	STMicroelectronics	MOSFET N-CH 650V 24A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	526In Stock	500:$6.0851 100:$7.2628 10:$8.8330 1:$9.8100
STB32N65M5 DISTI # 497-10564-2-ND	STMicroelectronics	MOSFET N-CH 650V 24A D2PAK RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	1000:$5.1455
STB32N65M5 DISTI # STB32N65M5	STMicroelectronics	Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STB32N65M5) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$5.0900 2000:$4.8900 4000:$4.6900 6000:$4.4900 10000:$4.3900
STB32N65M5 DISTI # 511-STB32N65M5	STMicroelectronics	MOSFET POWER MOSFET N-CH 650V RoHS: Compliant	1092	1:$8.2500 10:$7.4600 25:$7.1100 100:$6.1700 250:$5.9000 500:$5.3800 1000:$4.6800
STB32N65M5 DISTI # 7610676P	STMicroelectronics	MOSFET N-CHANNEL 650V 24A D2PAK, RL	710	10:£2.7000
STB32N65M5	ST Microwave Corporation	Power Field-Effect Transistor, 24A I(D), 650V, 0.119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	Europe - 1400
STB32N65M5 DISTI # 2098135	STMicroelectronics	MOSFET, N CH, 650V, 24A, D2PAK RoHS: Compliant	549	1:£6.0900 5:£5.0500 10:£4.5300 50:£4.1800 100:£3.9000
STB32N65M5 DISTI # 2098135	STMicroelectronics	MOSFET, N CH, 650V, 24A, D2PAK RoHS: Compliant	546	1:$13.0600 10:$11.8100 25:$11.2500 100:$9.7700 250:$9.3400 500:$8.5200 1000:$7.4100 2000:$7.1400

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