IRG4BC40W-STRRP

IRG4BC40W-STRRP
Mfr. #:
IRG4BC40W-STRRP
製造商:
Infineon / IR
描述:
IGBT Modules 600V 40AD2PAK
生命週期:
製造商新產品
數據表:
IRG4BC40W-STRRP 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRG4BC40W-STRRP DatasheetIRG4BC40W-STRRP Datasheet (P4-P6)IRG4BC40W-STRRP Datasheet (P7-P9)IRG4BC40W-STRRP Datasheet (P10)
ECAD Model:
更多信息:
IRG4BC40W-STRRP 更多信息
產品屬性
屬性值
製造商:
英飛凌
產品分類:
IGBT 模塊
RoHS:
Y
配置:
單身的
集電極-發射極電壓 VCEO 最大值:
600 V
25 C 時的連續集電極電流:
40 A
包裝/案例:
D-PAK-3
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
打包:
捲軸
高度:
4.83 mm
長度:
10.67 mm
寬度:
9.65 mm
品牌:
英飛凌/紅外
安裝方式:
貼片/貼片
最大柵極發射極電壓:
20 V
產品類別:
IGBT 模塊
出廠包裝數量:
800
子類別:
IGBT
第 # 部分別名:
SP001537010
單位重量:
0.009185 oz
Tags
IRG4BC40W-S, IRG4BC40W, IRG4BC4, IRG4BC, IRG4B, IRG4, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) D2PAK T/R
***ronik
IGBT 600V 20A 2.05V D2PAK RoHSconf
***el Electronic
Fixed Inductors 0.6x0.3mm 27nH 120mA+/-5%
***ical
Trans IGBT Chip N-CH 600V 40A 208000mW Automotive 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB
***or
IGBT FIELD STOP 600V 40A D2PAK
***ure Electronics
IGBT Transistors 600V 20A FSP IGBT
***ment14 APAC
IGBT, 600V, 40A, 150DEG C, 208W;
***rchild Semiconductor
Using novel field-stop IGBT technology, Fairchild’s new series of field-stop IGBTs offer optimum performance for automotive chargers, inverters, and other applications where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N-CH 600V 40A 156000mW Automotive 3-Pin(2+Tab) D2PAK T/R
***el Electronic
0402 1.8 pF 50 V ±0.05 pF Tolerance C0G SMT Multilayer Ceramic Capacitor
*** Electronic Components
IGBT Transistors IGBT PRODUCTS
***or
IKB20N60TA - 600V LOW LOSS SWITC
***ineon SCT
Copacked 600V IGBT in a D2-Pak package with a hyperfast 1-8 kHz diode, D2PAKCOPAK, RoHS
***ow.cn
Trans IGBT Chip N-CH 600V 31A 100000mW 3-Pin(2+Tab) D2PAK Tube
***ineon
Target Applications: Air Conditioner; Dryer; Pump; Solar; UPS; Washing Machine
***ment14 APAC
IGBT, D2-PAK; Transistor Type:IGBT; DC Collector Current:31A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:17A; Fall Time Max:230ns; Package / Case:D2-PAK; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:120A; Rise Time:27ns; Termination Type:SMD; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N-CH 600V 30A 130000mW 3-Pin(2+Tab) D2PAK T/R
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 7.9pF 25volts C0G +/-0.5pF
***ineon SCT
Infineon's 600 V, 15 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO263-3, RoHS
***ment14 APAC
IGBT,600V,15A,TO263; Transistor Type:IGBT; DC Collector Current:15A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:130W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; Power Dissipation Max:130W
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***-Wing Technology
Tube Surface Mount N-CHANNEL SINGLE WITH BUILT-IN DIODE IGBT Transistor 2.7V @ 15V 7A 28A 125W 31ns
***et
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*** Electronic Components
Motor / Motion / Ignition Controllers & Drivers Comp N-Ch 600V
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Not available to order 600V N-Channel IGBT SMPS II Series
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IC REG LINEAR 1.5V 2A TO220FP-3
300-1200V IGBTs
Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More
型號 製造商 描述 庫存 價格
IRG4BC40W-STRRP
DISTI # IRG4BC40W-STRRP-ND
Infineon Technologies AGIGBT 600V 40A 160W D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
Limited Supply - Call
  • 800:$2.6734
IRG4BC40W-STRRP
DISTI # IRG4BC40W-STRRP
Infineon Technologies AGTrans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRG4BC40W-STRRP)
RoHS: Compliant
Min Qty: 800
Container: Reel
Americas - 0
  • 800:$2.0900
  • 1600:$1.9900
  • 3200:$1.8900
  • 4800:$1.8900
  • 8000:$1.7900
IRG4BC40W-STRRP
DISTI # 942-IRG4BC40W-STRRP
Infineon Technologies AGIGBT Modules 600V 40AD2PAK
RoHS: Compliant
0
    圖片 型號 描述
    IRG4BC40W-SPBF

    Mfr.#: IRG4BC40W-SPBF

    OMO.#: OMO-IRG4BC40W-SPBF

    IGBT Transistors 600V WARP 60-150 KHZ DISCRETE IGBT
    IRG4BC40W-SPBF

    Mfr.#: IRG4BC40W-SPBF

    OMO.#: OMO-IRG4BC40W-SPBF-INFINEON-TECHNOLOGIES

    IGBT Transistors 600V WARP 60-150 KHZ DISCRETE IGBT
    可用性
    庫存:
    Available
    訂購:
    3000
    輸入數量:
    IRG4BC40W-STRRP的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$4.06
    US$4.06
    10
    US$3.45
    US$34.50
    100
    US$2.99
    US$299.00
    250
    US$2.83
    US$707.50
    500
    US$2.54
    US$1 270.00
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