SI4090DY-T1-GE3

Name: Vishay - SI4090DY-T1-GE3
Brand: Vishay
SKU: OMO-2823223
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SI4090DY-T1-GE3
製造商:: Vishay
描述:: IGBT Transistors MOSFET 100V 10mOhm@10V 19.7A N-Ch MV T-FET
生命週期:: 製造商新產品
數據表:: SI4090DY-T1-GE3 數據表
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ECAD Model:

產品屬性
屬性值

製造商: 威世矽

產品分類: FET - 單

系列: 溝槽FETR

打包: Digi-ReelR 替代包裝

部分別名: SI4090DY-GE3

單位重量: 0.017870 oz

安裝方式: 貼片/貼片

商品名: ThunderFET TrenchFET

包裝盒: 8-SOIC (0.154", 3.90mm Width)

技術: 矽

工作溫度: -55°C ~ 150°C (TJ)

安裝型: 表面貼裝

通道數: 1 Channel

供應商-設備-包: 8-SO

配置: 單身的

FET型: MOSFET N 溝道，金屬氧化物

最大功率: 7.8W

晶體管型: 1 N-Channel

漏源電壓 Vdss: 100V

輸入電容-Ciss-Vds: 2410pF @ 50V

FET-Feature: 標準

Current-Continuous-Drain-Id-25°C: 19.7A (Tc)

Rds-On-Max-Id-Vgs: 10 mOhm @ 15A, 10V

Vgs-th-Max-Id: 3.3V @ 250μA

柵極電荷-Qg-Vgs: 69nC @ 10V

鈀功耗: 7.8 W

Id 連續漏極電流: 19.7 A

Vds-漏-源-擊穿電壓: 100 V

VGS-th-Gate-Source-Threshold-Voltage: 3.3 V

Rds-On-Drain-Source-Resistance: 10 mOhms

晶體管極性: N通道

Qg-門電荷: 27.9 nC

Tags: SI409, SI40, SI4

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4090DY-T1-GE3 描述

***ure Electronics: N-Channel 100 V 10 mOhm 7.8 W Surface Mount Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 100V 19.7A 8-Pin SOIC N T/R

***mal: N-Ch MOSFET SO-8 100V 10mohm @ 10V

***et: Trans MOSFET N-CH 100V 13.2A 8-Pin SO T/R

***nell: MOSFET, N-CH, 100V, 19.7A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:19.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:7.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited

Market price

型號	製造商	描述	庫存	價格
SI4090DY-T1-GE3 DISTI # SI4090DY-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 100V 19.7A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	156In Stock	1000:$0.7308 500:$0.9257 100:$1.1936 10:$1.5100 1:$1.7100
SI4090DY-T1-GE3 DISTI # SI4090DY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 100V 19.7A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	156In Stock	1000:$0.7308 500:$0.9257 100:$1.1936 10:$1.5100 1:$1.7100
SI4090DY-T1-GE3 DISTI # SI4090DY-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 100V 19.7A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	2500:$0.6622
SI4090DY-T1-GE3 DISTI # SI4090DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 13.2A 8-Pin SO T/R (Alt: SI4090DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 12500	2500:$9.4600 5000:$6.5241 7500:$4.8513 12500:$3.9417 25000:$3.5698 62500:$3.4400 125000:$3.3193
SI4090DY-T1-GE3 DISTI # 19X1960	Vishay Intertechnologies	MOSFET Transistor, N Channel, 19.7 A, 100 V, 0.008 ohm, 10 V, 2 V RoHS Compliant: Yes	11795	1:$1.5900 10:$1.3200 25:$1.2200 50:$1.1300 100:$1.0300 500:$0.9010 1000:$0.8020
SI4090DY-T1-GE3 DISTI # 78-SI4090DY-T1-GE3	Vishay Intertechnologies	MOSFET 100V Vds 20V Vgs SO-8 RoHS: Compliant	9	1:$1.5100 10:$1.2400 100:$0.9510 500:$0.8180 1000:$0.7180 2500:$0.7170
SI4090DY-T1-GE3 DISTI # 2364058	Vishay Intertechnologies	MOSFET, N-CH, 100V, 19.7A, SOIC-8 RoHS: Compliant	9640	5:£1.0500 25:£0.7120 100:£0.6830 250:£0.6330 500:£0.5830
SI4090DY-T1-GE3 DISTI # 2364058	Vishay Intertechnologies	MOSFET, N-CH, 100V, 19.7A, SOIC-8 RoHS: Compliant	11795	1:$2.4000 10:$1.9700 100:$1.5100 500:$1.3000 1000:$1.1400 2500:$1.1400
SI4090DY-T1-GE3	Vishay Intertechnologies	MOSFET 100V Vds 20V Vgs SO-8 RoHS: Compliant	Americas -	2500:$0.6030 5000:$0.5790 10000:$0.5580