DMN3030LSS-13

Mfr. #:: DMN3030LSS-13
製造商:: Diodes Incorporated
描述:: MOSFET NMOS SINGLE N-CHANNL 30V 9A
生命週期:: 製造商新產品
數據表:: DMN3030LSS-13 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

產品屬性
屬性值

製造商：: 二極管公司

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: SO-8

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 30 V

Id - 連續漏極電流：: 9 A

Rds On - 漏源電阻：: 18 mOhms

Vgs - 柵源電壓：: 25 V

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 2.5 W

配置：: 單身的

頻道模式：: 增強

打包：: 捲軸

高度：: 1.5 mm

長度：: 4.95 mm

產品：: MOSFET 小信號

系列：: DMN3030

晶體管類型：: 1 N-Channel

寬度：: 3.95 mm

品牌：: 二極管公司

秋季時間：: 14 ns

產品類別：: MOSFET

上升時間：: 4.5 ns

出廠包裝數量：: 2500

子類別：: MOSFET

典型關斷延遲時間：: 18 ns

典型的開啟延遲時間：: 3.2 ns

單位重量：: 0.030018 oz

Tags: DMN3030LS, DMN3030, DMN303, DMN30, DMN3, DMN

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

DMN3030LSS-13 描述

***ical: Trans MOSFET N-CH 30V 9A Automotive 8-Pin SO T/R

***ark: Mosfet, N-Ch, 30V, 9A, Soic Rohs Compliant: Yes

***des Inc SCT: N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 25±V VGS

***ical: Trans MOSFET N-CH 30V 10A Automotive 8-Pin SOP T/R

***ark: Mosfet, N-Ch, 30V, 10A, Soic Rohs Compliant: Yes

***des Inc SCT: N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS

***ure Electronics: DMG4800 Series Dual N-Channel 30 V 8.5 A 16 Mohm Mosfet - SOIC-8

***et Europe: Transistor MOSFET Array Dual N-CH 30V 9.8A 8-Pin SOIC T/R

***nell: MOSFET, DUAL N-CH, 30V, SOIC-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 7.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.012ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 1.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ure Electronics: N-Channel 30 V 14 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***emi: N-Channel PowerTrench® MOSFET 30V, 10.2A, 14mΩ

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***ure Electronics: Single N-Channel 30 V 2 W 6 nC Hexfet Power Mosfet Surface Mount - SOIC-8

***nsix Microsemi: Power Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:9.7A; On Resistance Rds(On):0.0125Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V Rohs Compliant: Yes

***nell: MOSFET,DUAL N-CH 30V 9.7A SO8; Transistor Type:Power MOSFET; Transistor Polarity:N ; Voltage, Vds Typ:30V; Current, Id Cont:9.7A; On State Resistance:15.5mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.8V; Case Style:SOIC; Termination Type:SMD; Operating Temperature Range:-55°C to +175°C; No. of Pins:8; Power Dissipation Pd:2W; Voltage, Vgs th Max:2.35V; Transistor Case Style:SOIC

***ure Electronics: Dual N-Channel 30 V 15.5 mOhm 5.7 nC HEXFET® Power Mosfet - SOIC-8

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 8A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ment14 APAC: MOSFET, DUAL N-CH 30V 8A/11A SO8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):15.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.4W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8mA; Package / Case:SOIC; Power Dissipation Pd:2.4W; Power Dissipation Pd:2.4W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V

Market price

型號	製造商	描述	庫存	價格
DMN3030LSS-13 DISTI # 26571911	Zetex / Diodes Inc	Trans MOSFET N-CH 30V 9A Automotive 8-Pin SO T/R RoHS: Compliant	5000	2500:$0.1312
DMN3030LSS-13 DISTI # DMN3030LSS-13DICT-ND	Diodes Incorporated	MOSFET N-CH 30V 9A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2495In Stock	1000:$0.2022 500:$0.2617 100:$0.3569 10:$0.4760 1:$0.5700
DMN3030LSS-13 DISTI # DMN3030LSS-13DIDKR-ND	Diodes Incorporated	MOSFET N-CH 30V 9A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2495In Stock	1000:$0.2022 500:$0.2617 100:$0.3569 10:$0.4760 1:$0.5700
DMN3030LSS-13 DISTI # DMN3030LSS-13DITR-ND	Diodes Incorporated	MOSFET N-CH 30V 9A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock
DMN3030LSS-13 DISTI # DMN3030LSS-13	Diodes Incorporated	Trans MOSFET N-CH 30V 9A 8-Pin SO T/R - Tape and Reel (Alt: DMN3030LSS-13) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.1129 5000:$0.1069 10000:$0.1019 15000:$0.0969 25000:$0.0949
DMN3030LSS-13 DISTI # DMN3030LSS-13	Diodes Incorporated	Trans MOSFET N-CH 30V 9A 8-Pin SO T/R (Alt: DMN3030LSS-13) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.1769 5000:€0.1279 10000:€0.1189 15000:€0.1039 25000:€0.0969
DMN3030LSS-13 DISTI # 621-DMN3030LSS-13	Diodes Incorporated	MOSFET NMOS SINGLE N-CHANNL 30V 9A RoHS: Compliant	5065	1:$0.4600 10:$0.3800 100:$0.2320 1000:$0.1790 2500:$0.1530

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