GS66508T-E02-MR

GS66508T-E02-MR
Mfr. #:
GS66508T-E02-MR
製造商:
GaN Systems
描述:
MOSFET 650V 30A E-Mode GaN
生命週期:
製造商新產品
數據表:
GS66508T-E02-MR 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
GS66508T-E02-MR 更多信息
產品屬性
屬性值
製造商
氮化鎵系統
產品分類
晶體管 - FET、MOSFET - 單
打包
捲軸
安裝方式
貼片/貼片
技術
氮化鎵
通道數
1 Channel
配置
單身的
最高工作溫度
+ 150 C
最低工作溫度
- 55 C
VGS-柵極-源極-電壓
10 V
Vds-漏-源-擊穿電壓
650 V
VGS-th-Gate-Source-Threshold-Voltage
1.6 V
Rds-On-Drain-Source-Resistance
55 mOhms
晶體管極性
N通道
Qg-門電荷
6.5 nC
通道模式
增強
Tags
GS66508T, GS66508, GS6650, GS665, GS66, GS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hardson RFPD
GAN POWER TRANSISTOR
GS6650x 650V GaN Transistors
GaN Systems GS6650x 650V GaN Transistors are Enhancement Mode GaN-on-Silicon power devices. The properties of GaN allow for high current, high voltage breakdown, and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance and low thermal resistance in a small package. GS6650x Gan Transistors are bottom-side cooled, offering very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
型號 製造商 描述 庫存 價格
GS66508T-E02-MR
DISTI # 499-GS66508T-E02-MR
GaN SystemsMOSFET 650V 30A E-Mode GaN
RoHS: Compliant
3144
  • 1:$16.2500
  • 10:$15.7300
  • 25:$14.9900
  • 250:$13.9200
GS66508T-E02-MR
DISTI # GS66508T-E02-MR
GaN SystemsGAN POWER TRANSISTOR
RoHS: Compliant
750
  • 250:$12.9800
圖片 型號 描述
GS66508T-E02-MR

Mfr.#: GS66508T-E02-MR

OMO.#: OMO-GS66508T-E02-MR

MOSFET 650V 30A E-Mode GaN
GS66508P-E05-MR

Mfr.#: GS66508P-E05-MR

OMO.#: OMO-GS66508P-E05-MR

MOSFET 650V 30A E-Mode GaN
GS66508B-EVBDB

Mfr.#: GS66508B-EVBDB

OMO.#: OMO-GS66508B-EVBDB-1190

Power Management IC Development Tools GS66508B Half Bridge Daughter Board
GS66508P-E05-MR

Mfr.#: GS66508P-E05-MR

OMO.#: OMO-GS66508P-E05-MR-1190

MOSFET 650V 30A E-Mode GaN
GS66508T-E02

Mfr.#: GS66508T-E02

OMO.#: OMO-GS66508T-E02-1190

全新原裝
GS66508T-E02-MR

Mfr.#: GS66508T-E02-MR

OMO.#: OMO-GS66508T-E02-MR-1190

MOSFET 650V 30A E-Mode GaN
GS66508P-E05-TY

Mfr.#: GS66508P-E05-TY

OMO.#: OMO-GS66508P-E05-TY-128

MOSFET 650V 30A E-Mode GaN Preproduction Units
GS66508P-E04-TY

Mfr.#: GS66508P-E04-TY

OMO.#: OMO-GS66508P-E04-TY-128

MOSFET 650V 30A E-Mode GaN Preproduction Units
GS66508T-E01-TY

Mfr.#: GS66508T-E01-TY

OMO.#: OMO-GS66508T-E01-TY-128

MOSFET Top cooled 650V GaN Transisto
可用性
庫存:
Available
訂購:
2500
輸入數量:
GS66508T-E02-MR的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格(美元)
數量
單價
小計金額
1
US$19.47
US$19.47
10
US$18.50
US$184.96
100
US$17.52
US$1 752.30
500
US$16.55
US$8 274.75
1000
US$15.58
US$15 576.00
由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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