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IKW30N60H3FKSA1

IKW30N60H3FKSA1
Mfr. #:
IKW30N60H3FKSA1
製造商:
Infineon Technologies
描述:
IGBT Transistors 600V 30A 187W
生命週期:
製造商新產品
數據表:
IKW30N60H3FKSA1 數據表
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IKW30N60H3FKSA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
IGBT晶體管
RoHS：
Y
技術：
矽
包裝/案例：
TO-247-3
安裝方式：
通孔
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
600 V
集電極-發射極飽和電壓：
1.95 V
最大柵極發射極電壓：
20 V
25 C 時的連續集電極電流：
60 A
Pd - 功耗：
187 W
最低工作溫度：
- 40 C
最高工作溫度：
+ 175 C
系列：
HighSpeed 3
打包：
管子
高度：
20.7 mm
長度：
15.87 mm
寬度：
5.31 mm
品牌：
英飛凌科技
柵極-發射極漏電流：
100 nA
產品類別：
IGBT晶體管
出廠包裝數量：
240
子類別：
IGBT
商品名：
戰壕
第 # 部分別名：
IKW30N60H3 IKW3N6H3XK SP000703042
單位重量：
0.191185 oz
Tags
IKW30N60H, IKW30N60, IKW30N6, IKW30N, IKW3, IKW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ow.cn
Trans IGBT Chip N-CH 600V 60A 187000mW Automotive 3-Pin(3+Tab) TO-247 Tube
***ineon SCT
600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS
***ment14 APAC
IGBT+ DIODE,600V,20A,TO247; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:187W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:187W
***trelec
Configuration = Single / Continuous Collector Current (Ic) A = 30 / Collector-Emitter Voltage (Vceo) V = 600 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.95 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 187 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260
***ineon
Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications
***ical
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube
*** Electronics
STMICROELECTRONICS STGW20NC60VD IGBT Single Transistor, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 Pins
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
***ser
IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 30 Amp
***(Formerly Allied Electronics)
Transistor IGBT N-Ch 600V 60A TO247
***nell
IGBT, 600V, 20A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; O
*** Services
CoC and 2-years warranty / RFQ for pricing
***S
French Electronic Distributor since 1988
***ical
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube
***el Electronic
STMICROELECTRONICS STGW30NC60WD IGBT Single Transistor, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 Pins
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC
***ser
IGBTs Insulated Gate Bipolar Transistor PowerMESH" IGBT
***nell
IGBT, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Te
***(Formerly Allied Electronics)
STGW30NC60WD,IGBT Ultrafast 600V 30A
*** Electronic Components
IGBT Transistors PowerMESH" IGBT
***ical
Trans IGBT Chip N-CH 600V 120A 298000mW 3-Pin(3+Tab) TO-247AB Rail
***ure Electronics
FGH60N60UFD Series 600 V 120 A Flange Mount Field Stop IGBT - TO-247
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,FAST,W/DIO,600V,120A,TO247; Transistor Type:IGBT; DC Collector Current:120A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:298W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:298W
***ical
Trans IGBT Chip N=-CH 600V 54A 167000mW 3-Pin(3+Tab) TO-247 Rail
***eco
600V SMPS Series N-Channel IGBT Transistor with Anti-Parallel Hyperfast Diode
***ure Electronics
HGTG12N60A4D Series 600 V 54 A Flange Mount SMPS N-Channel IGBT-TO-247
***rchild Semiconductor
The HGTG12N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:54A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:167W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-249; Current Ic Continuous a Max:54A; Current Temperature:25°C; Device Marking:HGTG12N60A4D; Fall Time tf:95ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:167W; Power Dissipation Pd:167W; Power Dissipation Pd:167W; Pulsed Current Icm:96A; Rise Time:16ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
***ical
Trans IGBT Chip N-CH 600V 60A 181000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
V Series 600 V 60 A Through Hole Silicon IGBT - TO-247-3
***nell
IGBT, SINGLE, 600V, 60A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 258W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins
***ical
Trans IGBT Chip N=-CH 600V 60A 208000mW 3-Pin(3+Tab) TO-247 Rail
***ource
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode60A, 600V, UFS N
***nell
IGBT,N CH,600V,30A,TO-247.; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.9V; Power Dissipation Pd: 208W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins
***rchild Semiconductor
The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49172.
Home Appliance Solutions
Infineon Home Appliance Solutions offer a range of products for low power drive in-home appliance applications. These devices meet and exceed the most rigorous requirements for reliability, quality, security and energy efficiency. Included in this portfolio are RC-Drives IGBTs, fast IGBTs, discrete IGBTs, rapid diodes, gate driver ICs, microcontrollers: XMC™ and iMotion™, IPM: CIPOS™ and IRAM.Learn More
型號 製造商 描述 庫存 價格
IKW30N60H3FKSA1
DISTI # V99:2348_06377961		Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 187000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		240
  • 1200:$2.4490
  • 720:$2.8160
  • 240:$2.9040
  • 10:$3.2580
  • 1:$3.7130
IKW30N60H3FKSA1
DISTI # IKW30N60H3FKSA1-ND		Infineon Technologies AGIGBT 600V 60A 187W TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		1178In Stock
  • 1200:$2.6922
  • 720:$3.1349
  • 240:$3.6288
  • 10:$4.3610
  • 1:$4.8200
IKW30N60H3FKSA1
DISTI # 31073928		Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 187000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		1385
  • 100:$3.0432
  • 10:$3.5040
IKW30N60H3FKSA1
DISTI # 28976507		Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 187000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		240
  • 240:$2.9040
  • 10:$3.2580
  • 3:$3.7130
IKW30N60H3FKSA1
DISTI # IKW30N60H3FKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 600V 60A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKW30N60H3FKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 240:$2.2900
  • 480:$2.1900
  • 960:$2.0900
  • 1440:$1.9900
  • 2400:$1.9900
IKW30N60H3FKSA1
DISTI # 13T9448		Infineon Technologies AGIGBT+ DIODE,600V,20A,TO247,DC Collector Current:30A,Collector Emitter Saturation Voltage Vce(on):2.4V,Power Dissipation Pd:187W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:175°C,MSL:- RoHS Compliant: Yes1085
  • 1:$4.3000
  • 10:$3.6500
  • 25:$3.4900
  • 50:$3.3300
  • 100:$3.1700
IKW30N60H3FKSA1
DISTI # 726-IKW30N60H3FKSA1		Infineon Technologies AGIGBT Transistors 600V 30A 187W
RoHS: Compliant		410
  • 1:$4.3000
  • 10:$3.6500
  • 100:$3.1700
IKW30N60H3
DISTI # 726-IKW30N60H3		Infineon Technologies AGIGBT Transistors 600V 30A 187W
RoHS: Compliant		32
  • 1:$4.3000
  • 10:$3.6500
  • 100:$3.1700
IKW30N60H3FKSA1
DISTI # 1107756P		Infineon Technologies AGIGBT TRENCHSTOP N-CHANNEL 600V 30A TO247, TU170
  • 20:£2.6180
  • 100:£2.2730
  • 200:£2.1430
  • 500:£2.1000
IKW30N60H3FKSA1
DISTI # 1107756		Infineon Technologies AGIGBT TRENCHSTOP N-CHANNEL 600V 30A TO247, PK256
  • 4:£3.2980
  • 20:£2.6180
  • 100:£2.2730
  • 200:£2.1430
  • 500:£2.1000
IKW30N60H3FKSA1
DISTI # IKW30N60H3		Infineon Technologies AGTransistor: IGBT,600V,30A,94W,TO247-3,Series: H38
  • 1:$4.2600
  • 5:$3.6700
  • 30:$2.9500
  • 120:$2.6400
IKW30N60H3FKSA1
DISTI # C1S322000514690		Infineon Technologies AGIGBT Chip
RoHS: Compliant		240
  • 100:$2.8689
  • 10:$3.2510
  • 1:$3.7410
IKW30N60H3FKSA1
DISTI # 1832342		Infineon Technologies AGIGBT+ DIODE,600V,20A,TO247
RoHS: Compliant		1045
  • 1:£2.9400
  • 10:£2.3500
  • 100:£1.9200
  • 250:£1.7800
  • 500:£1.6300
IKW30N60H3FKSA1
DISTI # 1832342		Infineon Technologies AGIGBT+ DIODE,600V,20A,TO247
RoHS: Compliant		1045
  • 1:$6.8100
  • 10:$5.7800
  • 100:$5.0200
圖片 型號 描述
IR4427SPBF

Mfr.#: IR4427SPBF

OMO.#: OMO-IR4427SPBF

 Gate Drivers DUAL HI SIDE DRVR 6V to 20V 1.5A 85ns
IX4427N

Mfr.#: IX4427N

OMO.#: OMO-IX4427N

 Gate Drivers DUAL NON INVERT DRVR 8P SOIC Input CMOS
ADN4662BRZ

Mfr.#: ADN4662BRZ

OMO.#: OMO-ADN4662BRZ

 LVDS Interface IC SGL 3V CMOS Diff Line Receiver
C2M0080120D

Mfr.#: C2M0080120D

OMO.#: OMO-C2M0080120D

 MOSFET ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT
C247-075-3AE

Mfr.#: C247-075-3AE

OMO.#: OMO-C247-075-3AE

 Heat Sinks HEATSINK FOR TO-247 3 CLIPS, RADIAL
CS-DSDMDB09MF-010

Mfr.#: CS-DSDMDB09MF-010

OMO.#: OMO-CS-DSDMDB09MF-010

 D-Sub Cables DELUXE DB9 M/F MOLDED 10'
IX4427N

Mfr.#: IX4427N

OMO.#: OMO-IX4427N-IXYS-INTEGRATED-CIRCUITS-DIVIS

 Gate Drivers DUAL NON INVERT DRVR 8P SOIC Input CMOS
IR4427SPBF

Mfr.#: IR4427SPBF

OMO.#: OMO-IR4427SPBF-INFINEON-TECHNOLOGIES

 Gate Drivers DUAL HI SIDE DRVR 6V to 20V 1.5A 85ns
C2M0080120D

Mfr.#: C2M0080120D

OMO.#: OMO-C2M0080120D-WOLFSPEED

 MOSFET N-CH 1200V 31.6A TO247
ADN4662BRZ

Mfr.#: ADN4662BRZ

OMO.#: OMO-ADN4662BRZ-ANALOG-DEVICES-INC-ADI

 LVDS Interface IC SGL 3V CMOS Diff Line Receive
可用性
庫存:
368
訂購:
2351
輸入數量:
IKW30N60H3FKSA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$4.29
US$4.29
10
US$3.64
US$36.40
100
US$3.16
US$316.00
250
US$3.00
US$750.00
500
US$2.69
US$1 345.00
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