IPB03N03LAG

Mfr. #:: IPB03N03LAG
製造商:: Rochester Electronics, LLC
描述:: Power Field-Effect Transistor, 80A I(D), 25V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
生命週期:: 製造商新產品
數據表:: IPB03N03LAG 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

Tags: IPB03N03LA, IPB03N, IPB03, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB03N03LAG 描述

*** Electronics: MOSFET N-CH 25V 80A TO-263

***i-Key: N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

***ponent Stockers USA: 80 A 25 V 0.0064 ohm N-CHANNEL Si POWER MOSFET TO-263AB

***et: Trans MOSFET N-CH 25V 80A 3-Pin TO-263

***el Electronic: Power Field-Effect Transistor, 80A I(D), 25V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

***ical: Trans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***emi: N-Channel Logic Level PowerTrench® MOSFET, 30V, 80A, 2.1mΩ

***r Electronics: Power Field-Effect Transistor, 34A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***i-Key: MOSFET N-CH 30V 75A D2PAK

*** Electronic Components: MOSFET N-Ch UltraFET Logic Level

***et: TO263AB,SINGLE,NCH,30V,0,0032 OHM LOGIC LVL PWM OPT ULTR

***emi: N-Channel PowerTrench® MOSFET, 30V, 93A, 5.7mΩ

***ure Electronics: N-Channel 30 V 5.7 mOhm Surface Mount PowerTrench® Mosfet - TO-263AB

***et Europe: Trans MOSFET N-CH 30V 19A 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 80A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N CH, 30V, 93A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:93A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0049ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:80W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***ineon SCT: 30V, N-Ch, 2.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS

***ical: Trans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***ineon: Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 30V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 30V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 30V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.

***emi: N-Channel PowerTrench® MOSFET 30V, 93A, 5.7mΩ

***ical: Trans MOSFET N-CH 30V 19A Automotive 3-Pin(2+Tab) D2PAK T/R

***r Electronics: Power Field-Effect Transistor, 19A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

Market price

型號	製造商	描述	庫存	價格
IPB03N03LA G DISTI # IPB03N03LAGINTR-ND	Infineon Technologies AG	MOSFET N-CH 25V 80A TO-263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IPB03N03LA G DISTI # IPB03N03LAGINCT-ND	Infineon Technologies AG	MOSFET N-CH 25V 80A TO-263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IPB03N03LA G DISTI # IPB03N03LAGINDKR-ND	Infineon Technologies AG	MOSFET N-CH 25V 80A TO-263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IPB03N03LA G DISTI # 726-IPB03N03LAG	Infineon Technologies AG	MOSFET N-Ch 25V 80A D2PAK-2 RoHS: Compliant	0
IPB03N03LAG	Infineon Technologies AG	Power Field-Effect Transistor, 80A I(D), 25V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	1000	1000:$0.9200 500:$0.9700 100:$1.0100 25:$1.0500 1:$1.1300

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