STGE50NC60VD

Mfr. #:: STGE50NC60VD
製造商:: STMicroelectronics
描述:: IGBT Transistors N-chnl 50A-600V PowerMESH
生命週期:: 製造商新產品
數據表:: STGE50NC60VD 數據表
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產品屬性
屬性值

製造商：: 意法半導體

產品分類：: IGBT晶體管

RoHS：: Y

技術：: 矽

包裝/案例：: ISOTOP-4

安裝方式：: 通孔

配置：: 單雙發射器

集電極-發射極電壓 VCEO 最大值：: 600 V

最大柵極發射極電壓：: 20 V

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

系列：: STGE50NC60VD

打包：: 管子

連續集電極電流 Ic 最大值：: 80 A

高度：: 9.1 mm

長度：: 38.2 mm

寬度：: 25.5 mm

品牌：: 意法半導體

產品類別：: IGBT晶體管

出廠包裝數量：: 10

子類別：: IGBT

單位重量：: 1 oz

Tags: STGE5, STGE, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGE50NC60VD 描述

***ark: Igbt Single Transistor, 90 A, 2.5 V, 260 W, 600 V, Isotop, 4 Rohs Compliant: Yes

***et Europe: Trans IGBT Chip N-CH 600V 80A 4-Pin ISOTOP Tube

***ronik: IGBT 600V 90A 2.5V ISOTOP RoHSconf

***th Star Micro: IGBT 50A 600V ISOTOP

***ied Electronics & Automation: STMicroelectronics, STGE50NC60VD

***Components: STMicroelectronics STGE50NC60VD

***ment14 APAC: Prices include import duty and tax. IGBT, N 600V 50A ISOTOP; DC Collector Current:90A; Collector Emitter Saturation Voltage Vce(on):2.5V; Power Dissipation Pd:260W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:ISOTOP; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015); Current Ic Continuous a Max:50A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Max:260W; Pulsed Current Icm:200A; Rise Time:17ns; Termination Type:Surface Mount Device; Transistor Polarity:N Channel; Transistor Type:IGBT; Voltage Vces:600V

***nell: IGBT, N 600V 50A ISOTOP; Corrente di Collettore CC:90A; Tensione Saturaz Collettore-Emettitore Vce(on):2.5V; Dissipazione di Potenza Pd:260W; Tensione Collettore-Emettitore V(br)ceo:600V; Modello Case Transistor:ISOTOP; No. di Pin:4Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015); Corrente Ic Continua a Max:50A; Corrente Pulsata Icm:200A; Dissipazione di Potenza Max:260W; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Polarità Transistor:Canale N; Temperatura di Esercizio Min:-55°C; Tempo di Salita:17ns; Tensione Vces:600V; Tipo di Terminazione:Dispositivo a Montaggio Superficiale; Tipo di Transistor:IGBT

Market price

型號	製造商	描述	庫存
STGE50NC60VD DISTI # 497-7011-5-ND	STMicroelectronics	IGBT 50A 600V ISOTOP RoHS: Compliant Min Qty: 100 Container: Tube	Limited Supply - Call
STGE50NC60VD DISTI # 511-STGE50NC60VD	STMicroelectronics	IGBT Transistors N-chnl 50A-600V PowerMESH RoHS: Compliant	0
STGE50NC60VD	STMicroelectronics	RoHS: Compliant	Europe - 5

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