MTW32N20EG

Mfr. #:: MTW32N20EG
製造商:: ON Semiconductor
描述:: MOSFET NFET T0247 200V 32A 75mOhm
生命週期:: 製造商新產品
數據表:: MTW32N20EG 數據表
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HTML Datasheet:: MTW32N20EG Datasheet MTW32N20EG Datasheet (P4-P6)MTW32N20EG Datasheet (P7)
ECAD Model:

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 通孔

包裝/案例：: TO-247-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 200 V

Id - 連續漏極電流：: 32 A

Rds On - 漏源電阻：: 75 mOhms

Vgs - 柵源電壓：: 20 V

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 180 W

配置：: 單身的

頻道模式：: 增強

打包：: 管子

高度：: 20.3 mm

長度：: 15.9 mm

晶體管類型：: 1 N-Channel

類型：: MOSFET

寬度：: 5.3 mm

品牌：: 安森美半導體

正向跨導 - 最小值：: 12 S

秋季時間：: 91 ns

產品類別：: MOSFET

上升時間：: 120 ns

出廠包裝數量：: 30

子類別：: MOSFET

典型關斷延遲時間：: 75 ns

典型的開啟延遲時間：: 25 ns

單位重量：: 1.340411 oz

Tags: MTW32N20, MTW32N2, MTW32, MTW3, MTW

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MTW32N20EG 描述

***Semiconductor: Power MOSFET 200V 32A 75 mOhm Single N-Channel TO-247

***et Europe: Trans MOSFET N-CH 200V 32A 3-Pin(3+Tab) TO-247 Rail

***ser: MOSFETs- Power and Small Signal 200V 32A N-Channel

***nell: N CHANNEL MOSFET, 200V, 32A, TO-247

***i-Key: MOSFET N-CH 200V 32A TO247

***ark: N Channel Mosfet, 200V, 32A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.075Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Msl:- Rohs Compliant: Yes

***th Star Micro: This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage high speed switching applications in power supplies converters and PWM motor controls these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

Market price

型號	製造商	描述	庫存
MTW32N20EG DISTI # MTW32N20EGOS-ND	ON Semiconductor	MOSFET N-CH 200V 32A TO247 RoHS: Compliant Min Qty: 90 Container: Tube	Limited Supply - Call
MTW32N20EG DISTI # 26K4667	ON Semiconductor	N CHANNEL MOSFET, 200V, 32A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:32A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.075ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes	0
MTW32N20E DISTI # 863-MTW32N20E	ON Semiconductor	MOSFET 200V 32A N-Channel RoHS: Not compliant	0
MTW32N20EG DISTI # 863-MTW32N20EG	ON Semiconductor	MOSFET NFET T0247 200V 32A 75mOhm RoHS: Compliant	0

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