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FDMS0306AS

FDMS0306AS
Mfr. #:
FDMS0306AS
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET PT8 N 30/20 SYNCFET
生命週期:
製造商新產品
數據表:
FDMS0306AS 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
Power-56-8
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
30 V
Id - 連續漏極電流：
26 A
Rds On - 漏源電阻：
2 mOhms
Vgs th - 柵源閾值電壓：
1.7 V
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
41 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
2.5 W
配置：
單身的
頻道模式：
增強
商品名：
PowerTrench 同步場效應晶體管
打包：
捲軸
高度：
1.1 mm
長度：
6 mm
系列：
FDMS0306AS
寬度：
5 mm
品牌：
安森美半導體/飛兆半導體
正向跨導 - 最小值：
168 S
秋季時間：
4 ns
產品類別：
MOSFET
上升時間：
5 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
32 ns
典型的開啟延遲時間：
12 ns
單位重量：
0.002402 oz
Tags
FDMS030, FDMS03, FDMS0, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
Trans MOSFET N-CH 30V 26A 8-Pin Power 56 T/R - Tape and Reel
*** Stop Electro
Power Field-Effect Transistor, 26A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS0306AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***Yang
Trans MOSFET N-CH 30V 26A 8-Pin Power 56 T/R - Tape and Reel
*** Stop Electro
Power Field-Effect Transistor, 26A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:59W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS8023S has been designed to minimize losses in power conversion application. Advancements in both Silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
***roFlash
Single N-Channel 30 V 2.95 mOhm 59 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 50A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ark
T&R / MOSFET, 30V, 25A, 4.9 mOhm, 4.7nC Qg, PQFN5x6
***ical
Trans MOSFET N-CH 30V 27A 8-Pin QFN EP T/R
***Yang
Trans MOSFET N-CH 30V 27A 8-Pin PQFN T/R - Tape and Reel
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 1.3C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***ark
MOSFET, 30V, 50A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Curr
***(Formerly Allied Electronics)
Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 50A; 2mohm @ 10V; PowerPAK SO-8
***nell
MOSFET, 30V, 50A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00165ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:50W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
***ure Electronics
Single N-Channel 30 V 0.0028 Ohm 69 W Surface Mount Power Mosfet - PowerPAK-SO-8
***ical
Trans MOSFET N-CH 30V 50A 8-Pin PowerPAK SO EP T/R
*** Electronics
MOSFET 30 Volts 50 Amps 69 Watts
***S
French Electronic Distributor since 1988
***ure Electronics
Single N-Channel 30 V 50 A 69 W 1.8 mOhm Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 50A 8-Pin PowerPAK SO EP T/R
***ponent Sense
MOSFET 30V 50A 69W 2.5mohm @ 10V
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 33.3A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, N CH, 30V, 50A, PPAK SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.05mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:69W; Voltage Vgs Max:20V
***ical
Trans MOSFET N-CH Si 30V 24A 8-Pin PQFN EP T/R
*** Stop Electro
Power Field-Effect Transistor, 24A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS0308AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
型號 製造商 描述 庫存 價格
FDMS0306AS
DISTI # 31022485		ON SemiconductorSINGLE PT8 N 30/20 SYNCFET3000
  • 3000:$0.5158
FDMS0306AS
DISTI # 31234741		ON SemiconductorSINGLE PT8 N 30/20 SYNCFET3000
  • 6000:$0.4825
  • 3000:$0.5388
FDMS0306AS
DISTI # FDMS0306ASCT-ND		ON SemiconductorMOSFET N-CH 30V 26A PT8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    FDMS0306AS
    DISTI # FDMS0306ASDKR-ND    		ON SemiconductorMOSFET N-CH 30V 26A PT8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      FDMS0306AS
      DISTI # FDMS0306ASTR-ND      		ON SemiconductorMOSFET N-CH 30V 26A PT8
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 3000:$0.4905
      FDMS0306AS
      DISTI # FDMS0306AS      		ON SemiconductorTrans MOSFET N-CH 30V 26A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS0306AS)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
      • 3000:$0.4159
      • 6000:$0.4129
      • 12000:$0.4079
      • 18000:$0.4029
      • 30000:$0.3929
      FDMS0306AS
      DISTI # FDMS0306AS      		ON SemiconductorTrans MOSFET N-CH 30V 26A 8-Pin Power 56 T/R (Alt: FDMS0306AS)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel      		Europe - 0
      • 3000:€0.8389
      • 6000:€0.6529
      • 12000:€0.5419
      • 18000:€0.4569
      • 30000:€0.4229
      FDMS0306AS
      DISTI # 68X0368      		ON SemiconductorPT8 N 30/20 SYNCFET / REEL0
      • 1:$0.6370
      FDMS0306AS
      DISTI # 512-FDMS0306AS      		ON SemiconductorMOSFET PT8 N 30/20 SYNCFET
      RoHS: Compliant      		1923
      • 1:$1.0500
      • 10:$0.8920
      • 100:$0.6850
      • 500:$0.6060
      • 1000:$0.4780
      • 3000:$0.4240
      • 9000:$0.4080
      FDMS0306ASFairchild Semiconductor Corporation 
      RoHS: Not Compliant      		18000
      • 1000:$0.4600
      • 500:$0.4900
      • 100:$0.5100
      • 25:$0.5300
      • 1:$0.5700
      圖片 型號 描述
      BAS19LT1G

      Mfr.#: BAS19LT1G

      OMO.#: OMO-BAS19LT1G

      		 Diodes - General Purpose, Power, Switching 120V 200mA
      FDMS7692

      Mfr.#: FDMS7692

      OMO.#: OMO-FDMS7692

      		 MOSFET PT7 30/20V Nch PowerTrench
      IRFHM9331TRPBF

      Mfr.#: IRFHM9331TRPBF

      OMO.#: OMO-IRFHM9331TRPBF

      		 MOSFET 1 P-CH -30V HEXFET 14.6mOhms 16nC
      FDMC7692S

      Mfr.#: FDMC7692S

      OMO.#: OMO-FDMC7692S

      		 MOSFET 30V N-Channel PowerTrench SyncFET
      5650921-5

      Mfr.#: 5650921-5

      OMO.#: OMO-5650921-5

      		 DIN 41612 Connectors DIN PLUG 120P VERT TYPE R
      PMR10EZPFV2L00

      Mfr.#: PMR10EZPFV2L00

      OMO.#: OMO-PMR10EZPFV2L00-ROHM-SEMI

      		 RES 0.002 OHM 1% 1/2W 0805
      5650921-5

      Mfr.#: 5650921-5

      OMO.#: OMO-5650921-5-TE-CONNECTIVITY

      		 DIN 41612 Connectors DIN PLUG 120P VERT TYPE R
      BAS19LT1G

      Mfr.#: BAS19LT1G

      OMO.#: OMO-BAS19LT1G-ON-SEMICONDUCTOR

      		 Diodes - General Purpose, Power, Switching 120V 200mA
      DF40C-40DP-0.4V(51)

      Mfr.#: DF40C-40DP-0.4V(51)

      OMO.#: OMO-DF40C-40DP-0-4V-51--HIROSE

      		 Board to Board & Mezzanine Connectors 40P SMT HEADER NO FITTING, NO BOSS
      FDMC7692S

      Mfr.#: FDMC7692S

      OMO.#: OMO-FDMC7692S-ON-SEMICONDUCTOR

      		 MOSFET N-CH 30V 8-MLP
      可用性
      庫存:
      Available
      訂購:
      1986
      輸入數量:
      FDMS0306AS的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格（美元）
      數量
      單價
      小計金額
      1
      US$1.05
      US$1.05
      10
      US$0.89
      US$8.92
      100
      US$0.68
      US$68.50
      500
      US$0.61
      US$303.00
      1000
      US$0.48
      US$478.00
      由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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