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SIHG460B-GE3

SIHG460B-GE3
Mfr. #:
SIHG460B-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET 500V 250mOhm@10V 20A N-Ch D-SRS
生命週期:
製造商新產品
數據表:
SIHG460B-GE3 數據表
交貨:
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支付:
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HTML Datasheet:
SIHG460B-GE3 DatasheetSIHG460B-GE3 Datasheet (P4-P6)SIHG460B-GE3 Datasheet (P7-P8)
ECAD Model:
更多信息:
SIHG460B-GE3 更多信息
產品屬性
屬性值
製造商：
威世
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-247AC-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
500 V
Id - 連續漏極電流：
20 A
Rds On - 漏源電阻：
250 mOhms
Vgs th - 柵源閾值電壓：
4 V
Vgs - 柵源電壓：
30 V
Qg - 門電荷：
85 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
278 W
配置：
單身的
頻道模式：
增強
打包：
大部分
高度：
20.82 mm
長度：
15.87 mm
系列：
D
寬度：
5.31 mm
品牌：
威世 / Siliconix
秋季時間：
56 ns
產品類別：
MOSFET
上升時間：
31 ns
出廠包裝數量：
500
子類別：
MOSFET
典型關斷延遲時間：
117 ns
典型的開啟延遲時間：
24 ns
單位重量：
1.340411 oz
Tags
SIHG4, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CH, 500V, 20A, TO-247AC; Transistor Polarity:N Channel; Continuous Dra
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N-CH, 500V, 20A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:278W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247AC; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
D-Series High Voltage Power MOSFETs
Vishay Siliconix's D-Series High Voltage Power MOSFETs are Vishay's next-generation high voltage N-Channel MOSFETs available in 400V, 500V and 600V ratings. These new devices combines low specific on-resistance with ultra-low gate charge, currents from 3.0A to 36A and are available in a wide range of packages. Features include Vishay's new high-voltage stripe technology, on-resistance down to 0.13Ω, gate charge down to 6nC, best-in-class gate charge times on-resistant figures of merit (FOM) down to 7.65 Ω-nC, and avalanche rated for reliable operation. Typical applications include high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating.
型號 製造商 描述 庫存 價格
SIHG460B-GE3
DISTI # V36:1790_09219142		Vishay IntertechnologiesTrans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247AC
RoHS: Compliant		0
  • 500000:$1.9450
  • 250000:$1.9480
  • 50000:$2.0930
  • 5000:$2.3300
  • 500:$2.3680
SIHG460B-GE3
DISTI # SIHG460B-GE3-ND		Vishay SiliconixMOSFET N-CH 500V 20A TO-247AC
Min Qty: 500
Container: Tube		Temporarily Out of Stock
  • 500:$2.3685
SIHG460B-GE3
DISTI # SIHG460B-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247AC - Tape and Reel (Alt: SIHG460B-GE3)
RoHS: Not Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 3000:$1.7900
  • 5000:$1.7900
  • 2000:$1.8900
  • 500:$1.9900
  • 1000:$1.9900
SIHG460B-GE3
DISTI # SIHG460B-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247AC (Alt: SIHG460B-GE3)
Min Qty: 1		Europe - 0
    SIHG460B-GE3
    DISTI # 78-SIHG460B-GE3    		Vishay IntertechnologiesMOSFET 500V 250mOhm@10V 20A N-Ch D-SRS
    RoHS: Compliant    		0
    • 1:$4.0000
    • 10:$3.3200
    • 100:$2.7300
    • 250:$2.6600
    • 500:$2.3100
    • 1000:$2.0700
    • 2500:$1.9800
    SIHG460B-GE3Vishay IntertechnologiesMOSFET 500V 250mOhm@10V 20A N-Ch D-SRS
    RoHS: Compliant    		Americas -
      SIHG460B-GE3
      DISTI # 7879178      		Vishay IntertechnologiesSIHG460B-GE3 N-Channel MOSFET, 20 A, 500 V D Series, 3-Pin TO-247AC Vishay, EA37
      • 1:$5.0520
      • 50:$4.1910
      • 250:$3.3460
      • 1000:$2.5350
      • 5000:$2.3490
      SIHG460B-GE3
      DISTI # 1451833      		Vishay IntertechnologiesIn a Tube of 25, SIHG460B-GE3 N-Channel MOSFET, 20 A, 500 V D Series, 3-Pin TO-247AC Vishay, TU0
      • 25:$4.1910
      SIHG460BGE3Vishay IntertechnologiesPower Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
      RoHS: Compliant      		Europe - 500
        SIHG460B-GE3
        DISTI # 2283617        		Vishay IntertechnologiesMOSFET, N-CH, 500V, 20A, TO-247AC
        RoHS: Compliant        		92
        • 5000:$2.7600
        • 2500:$2.8600
        • 1000:$3.0100
        • 500:$3.5700
        • 250:$3.9800
        • 100:$4.1100
        • 10:$5.0000
        • 1:$6.0300
        SIHG460B-GE3
        DISTI # 2283617        		Vishay IntertechnologiesMOSFET, N-CH, 500V, 20A, TO-247AC
        RoHS: Compliant        		92
        • 1000:£1.4900
        • 500:£1.8600
        • 250:£2.0800
        • 100:£2.1400
        • 10:£2.6100
        • 1:£3.5200
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        可用性
        庫存:
        271
        訂購:
        2254
        輸入數量:
        SIHG460B-GE3的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
        參考價格（美元）
        數量
        單價
        小計金額
        1
        US$4.00
        US$4.00
        10
        US$3.32
        US$33.20
        100
        US$2.73
        US$273.00
        250
        US$2.64
        US$660.00
        500
        US$2.37
        US$1 185.00
        1000
        US$2.00
        US$2 000.00
        2500
        US$1.90
        US$4 750.00
        5000
        US$1.83
        US$9 150.00
        由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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