FDMC8360LET40

Mfr. #:: FDMC8360LET40
製造商:: ON Semiconductor / Fairchild
描述:: MOSFET PT8 Nch 40/20V Power Trench MOSFET
生命週期:: 製造商新產品
數據表:: FDMC8360LET40 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: Power-33-8

商品名：: PowerTrench 電源夾

打包：: 捲軸

高度：: 0.8 mm

長度：: 3.3 mm

系列：: FDMC8360LET40

寬度：: 3.3 mm

品牌：: 安森美半導體/飛兆半導體

產品類別：: MOSFET

出廠包裝數量：: 3000

子類別：: MOSFET

單位重量：: 0.005386 oz

Tags: FDMC83, FDMC8, FDMC, FDM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDMC8360LET40 描述

***emi: N-Channel Shielded Gate Power Trench® MOSFET 40V, 141A, 2.1mΩ

***r Electronics: Power Field-Effect Transistor, 141A I(D), 40V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates shielded gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.

***emi: Single N−Channel Power MOSFET 40 V, 150 A, 2.0mΩ Power MOSFET 40 V, 2.0 mΩ, 150 A, Single N−Channel

***el Electronic: ON SEMICONDUCTOR NTMFS5C423NLT1G MOSFET Transistor, N Channel, 150 A, 40 V, 0.0016 ohm, 10 V, 2 V

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:150A; On Resistance Rds(On):0.0016Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V Rohs Compliant: Yes

*** Electronics: ON SEMICONDUCTOR NVMFS5C423NLT1G MOSFET Transistor, N Channel, 150 A, 40 V, 0.0016 ohm, 10 V, 2 V

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:150A; On Resistance Rds(On):0.0016Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V Rohs Compliant: Yes

***nell: MOSFET, N-CH, 40V, 150A, DFN-5; Transistor Polarity: N Channel; Continuous Drain Current Id: 150A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0016ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 83W; Transistor Case Style: DFN; No. of Pins: 5Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***emi: PowerTrench® MOSFET, N-Channel, 40V, 100A, 2.0mΩ

***ical: Trans MOSFET N-CH 40V 100A Automotive 3-Pin(2+Tab) DPAK T/R

***nell: MOSFET, AEC-Q101, NCH, 100A, 40V, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0; Available until stocks are exhausted Alternative available

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS

*** Source Electronics: Trans MOSFET N-CH 30V 32A 8-Pin QFN EP T/R / MOSFET N CH 30V 32A PQFN5X6

***ark: TAPE AND REEL / MOSFET, 30V, 50A, 2.1 mOhm, 33nC Qg, PQFN5x6

***ment14 APAC: MOSFET, N-CH, 30V, 80A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Source Voltage Vds:30V; On Resistance

***ineon: Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 1.3C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs

***nell: MOSFET, N-CH, 30V, 80A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0017ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 96W; Transistor Case Style: PQFN; No. of Pins: 5Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon SCT: 40V, N-Ch, 1.6 mΩ max, Automotive MOSFET, D2PAK 7pin, OptiMOS™-T2, PG-TO263-7, RoHS

***p One Stop Global: Trans MOSFET N-CH 40V 160A Automotive 7-Pin(6+Tab) TO-263 T/R

***nell: MOSFET, AEC-Q101, N-CH, 40V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 160A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0014ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 167W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS-T2 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.

***ineon SCT: 40V, N-Ch, 1.5 mΩ max, Automotive MOSFET, D2PAK 7pin, OptiMOS™-T2, PG-TO263-7, RoHS

***ical: Trans MOSFET N-CH 40V 160A Automotive 7-Pin(6+Tab) D2PAK T/R

***ineon: Summary of Features: N-channel Logic Level - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); 100% Avalanche teste

Market price

型號	製造商	描述	庫存	價格
FDMC8360LET40 DISTI # V36:1790_14701473	ON Semiconductor	PT8 N-CH 40/20V POWER TRENCH M	0	3000000:$0.6458 1500000:$0.6461 300000:$0.6804 30000:$0.7444 3000:$0.7552
FDMC8360LET40 DISTI # V72:2272_14701473	ON Semiconductor	PT8 N-CH 40/20V POWER TRENCH M	0
FDMC8360LET40 DISTI # FDMC8360LET40OSTR-ND	ON Semiconductor	PT8 N-CH 40/20V POWER TRENCH MOS RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	6000:$0.7273 3000:$0.7552
FDMC8360LET40 DISTI # FDMC8360LET40OSCT-ND	ON Semiconductor	PT8 N-CH 40/20V POWER TRENCH MOS RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.8355 500:$1.0084 100:$1.2273 10:$1.5270 1:$1.7000
FDMC8360LET40 DISTI # FDMC8360LET40OSDKR-ND	ON Semiconductor	PT8 N-CH 40/20V POWER TRENCH MOS RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.8355 500:$1.0084 100:$1.2273 10:$1.5270 1:$1.7000
FDMC8360LET40 DISTI # FDMC8360LET40	ON Semiconductor	Trans MOSFET N-CH 40V 27A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMC8360LET40) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.6569 18000:$0.6739 12000:$0.6829 6000:$0.6909 3000:$0.6959
FDMC8360LET40 DISTI # FDMC8360LET40	ON Semiconductor	Trans MOSFET N-CH 40V 27A 8-Pin PQFN T/R (Alt: FDMC8360LET40) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.6609 18000:€0.7119 12000:€0.7719 6000:€0.8419 3000:€1.0289
FDMC8360LET40 DISTI # 01AC8548	ON Semiconductor	FET 40V 2.1 MOHM PQFN33 / REEL	0	1000:$0.9640 500:$1.0500 250:$1.1300 100:$1.2500 1:$1.5400
FDMC8360LET40 DISTI # 512-FDMC8360LET40	ON Semiconductor	MOSFET PT8 Nch 40/20V Power Trench MOSFET RoHS: Compliant	0	1:$1.5700 10:$1.3400 100:$1.0700 500:$0.9330 1000:$0.7730 3000:$0.7200 6000:$0.6930 9000:$0.6660

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