We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
型號 | 製造商 | 描述 | 庫存 | 價格 |
---|---|---|---|---|
SI4286DY-T1-GE3 DISTI # V72:2272_09215546 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 5.7A 8-Pin SOIC N RoHS: Compliant | 825 |
|
SI4286DY-T1-GE3 DISTI # SI4286DY-T1-GE3CT-ND | Vishay Siliconix | MOSFET 2N-CH 40V 7A 8SO RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 4516In Stock |
|
SI4286DY-T1-GE3 DISTI # SI4286DY-T1-GE3DKR-ND | Vishay Siliconix | MOSFET 2N-CH 40V 7A 8SO RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 4516In Stock |
|
SI4286DY-T1-GE3 DISTI # SI4286DY-T1-GE3TR-ND | Vishay Siliconix | MOSFET 2N-CH 40V 7A 8SO RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | 2500In Stock |
|
SI4286DY-T1-GE3 DISTI # 33092553 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 5.7A 8-Pin SOIC N RoHS: Compliant | 5000 |
|
SI4286DY-T1-GE3 DISTI # 30276089 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 5.7A 8-Pin SOIC N RoHS: Compliant | 825 |
|
SI4286DY-T1-GE3 DISTI # SI4286DY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 40V 5.7A 8-Pin SOIC N (Alt: SI4286DY-T1-GE3) RoHS: Compliant Min Qty: 2500 | Europe - 12500 |
|
SI4286DY-T1-GE3 DISTI # 01AC4996 | Vishay Intertechnologies | MOSFET, DUAL N-CH, 40V, 7A, SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:7A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.027ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power RoHS Compliant: Yes | 0 | |
SI4286DY-T1-GE3. DISTI # 26AC3328 | Vishay Intertechnologies | Transistor Polarity:Dual N Channel,Continuous Drain Current Id:7A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.027ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power Dissipation Pd:2.9W,No. of Pins:8Pins RoHS Compliant: Yes | 0 | |
SI4286DY-T1-GE3 DISTI # 70616175 | Vishay Siliconix | SI4286DY-T1-GE3 Dual N-channel MOSFET Transistor,7 A,40 V,8-Pin SOIC RoHS: Compliant | 0 |
|
SI4286DY-T1-GE3 DISTI # 78-SI4286DY-T1-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 78-SI4288DY-T1-GE3 RoHS: Compliant | 7677 |
|
SI4286DY-T1-GE3 DISTI # 8123211P | Vishay Intertechnologies | TRANS MOSFET N-CH 40V 5.7A, RL | 2540 |
|
SI4286DY-T1-GE3 DISTI # 2646383 | Vishay Intertechnologies | MOSFET, DUAL N-CH, 40V, 7A, SOIC RoHS: Compliant | 9242 |
|
SI4286DY-T1-GE3 DISTI # 2679693 | Vishay Intertechnologies | MOSFET, DUAL N-CH, 40V, 7A, SOIC RoHS: Compliant | 0 |
|
SI4286DY-T1-GE3 DISTI # 2646383 | Vishay Intertechnologies | MOSFET, DUAL N-CH, 40V, 7A, SOIC RoHS: Compliant | 9277 |
|
圖片 | 型號 | 描述 |
---|---|---|
Mfr.#: SI4286DY-T1-GE3 OMO.#: OMO-SI4286DY-T1-GE3-VISHAY |
MOSFET 2N-CH 40V 7A 8SO |