FZ400R12KP4HOSA1

Mfr. #:: FZ400R12KP4HOSA1
製造商:: Infineon Technologies
描述:: MOD IGBT MED PWR 62MM-2
生命週期:: 製造商新產品
數據表:: FZ400R12KP4HOSA1 數據表
交貨:: DHL FedEx Ups TNT EMS
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ECAD Model:

產品屬性
屬性值

Tags: FZ400R12K, FZ400R12, FZ400R1, FZ400R, FZ40, FZ4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FZ400R12KP4HOSA1 描述

***et Europe: Trans IGBT Module N-CH 1.2KV 400A 4-pin 62MM-2

***ineon SCT: Our well-known 62 mm C-Series 1200 V single switch IGBT module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode are the right choice for your design, AG-62MM-2, RoHS

***ineon: Our well-known 62 mm C-Series 1200V single switch IGBT module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode are the right choice for your design. | Summary of Features: Extended Operation Temperature T vj op; Low Switching Losses; Unbeatabel Robustness; V CEsat with positive Temperature Coefficient; Low V CEsat; 4 kV AC 1 min Insulation; Package with CTI > 400; High Creepage and Clearance Distances; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

***ark: IGBT Array & Module Transistor, Dual NPN, 580 A, 1.75 V, 2.4 kW, 1.2 kV, Module

*** Source Electronics: Trans IGBT Module N-CH 1200V 580A 2400000mW 7-Pin 62MM-1 Tray / IGBT MODULE 1200V 450A

***ure Electronics: FF450R12KT4 Series 1200 V 580 A Trench Field-Stop IGBT Module

***nell: IGBT MODULE, DUAL NPN, 1.75V, 580A; Transistor Polarity: Dual NPN; DC Collector Current: 580A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 2.4kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Trans

***ineon: Our well-known 62mm C-series 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled diode are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

***ical: Trans IGBT Module N-CH 1200V 900A 2800000mW Automotive 4-Pin 62MM-2 Tray

***nell: IGBT MODULE, 1200V; Transistor Type:IGBT Module; Voltage, Vces:1200V; Current Ic Continuous a Max:600A; Voltage, Vce Sat Max:2.15V; Power Dissipation:2800W; Case Style:Custom; Termination Type:Screw; Operating Temperature Range:-40°C to +125°C; SVHC:Cobalt dichloride; Collector-to-Emitter Breakdown Voltage:1200V; Current Temperature:80°C; Current, Icm Pulsed:1200A; Full Power Rating Temperature:25°C; Power Dissipation Pd:2800W; Rise Time:90ns; Voltage, Vce Sat Typ:1.7V

***ineon: Our well-known 62 mm 1200V single switch IGBT modules with IGBT3 are the right choice for your design. | Summary of Features: Low Switching Losses; Unbeatable Robustness; V CEsat with positive Temperature Coefficient; Low V CEsat; Package with CTI > 400; High Creepage and Clearance Distances; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

***ical: Trans IGBT Module N-CH 1200V 600A 2100000mW 11-Pin ECONOD-3 Tray

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0201 9.4pF 100volts C0G +/-0.25pF

***ure Electronics: FF450R12ME3 Series 1200 V 600 A 2100 W Chassis Mount EconoDUAL IGBT Module

***et: Transistor IGBT Module N-CH 1200V 600A 20V Screw Mount Tray

***ical: Trans IGBT Module N-CH 1700V 75A 312000mW 12-Pin Case SP-1 Tube

*** Stop Electro: Insulated Gate Bipolar Transistor, 75A I(C), 1700V V(BR)CES, N-Channel

***rochip SCT: High Voltage Power Module, Buck chopper, 1700V, RoHS

***ark: PM-IGBT-TFS-SP1 SP1 Tube RoHS Compliant: Yes

***ure Electronics: APTGT600x Series 600 V 100 A Trench + Field Stop IGBT3 Power Module - SP1

***ical: Trans IGBT Module N-CH 600V 100A 250000mW 12-Pin Case SP-1 Tube

*** Stop Electro: Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel

***rochip SCT: High Voltage Power Module, Phase leg, 600V, RoHS

***ark: PM-IGBT-TFS-SP1 SP1 Tube RoHS Compliant: Yes

***i-Key: IGBT PHASE LEG TRENCH 600V SP1

***el Electronic: IGBT MODULE 600V 100A 250W SP1

***ure Electronics: APTGT50x Series 600 V 80 A Trench + Field Stop IGBT3 Power Module - SP3

***ical: Trans IGBT Module N-CH 600V 80A 176000mW 32-Pin Case SP-3

*** Stop Electro: Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel

***rochip SCT: High Voltage Power Module, Three Phase bridge, 600V, RoHS

***ark: PM-IGBT-TFS-SP3F SP3F Tube RoHS Compliant: Yes

Market price

型號	製造商	描述	庫存	價格
FZ400R12KP4HOSA1 DISTI # FZ400R12KP4HOSA1-ND	Infineon Technologies AG	MOD IGBT MED PWR 62MM-2 RoHS: Compliant Min Qty: 10 Container: Tray	Temporarily Out of Stock	10:$95.6090
FZ400R12KP4HOSA1 DISTI # FZ400R12KP4HOSA1	Infineon Technologies AG	MEDIUM POWER 62MM - Trays (Alt: FZ400R12KP4HOSA1) RoHS: Compliant Min Qty: 10 Container: Tray	Americas - 0
FZ400R12KP4 DISTI # 641-FZ400R12KP4	Infineon Technologies AG	IGBT Modules IGBT 1200V 400A RoHS: Compliant	4	1:$104.0600 5:$102.1500 10:$97.5500 25:$94.3100 50:$94.3000

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