FGA50N100BNTDTU

Mfr. #:: FGA50N100BNTDTU
製造商:: ON Semiconductor / Fairchild
描述:: IGBT Transistors 600V 4 0A UFD
生命週期:: 製造商新產品
數據表:: FGA50N100BNTDTU 數據表
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更多信息:: FGA50N100BNTDTU 更多信息

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: IGBT晶體管

RoHS：: Y

技術：: 矽

包裝/案例：: TO-3P-3

安裝方式：: 通孔

配置：: 單身的

集電極-發射極電壓 VCEO 最大值：: 1000 V

集電極-發射極飽和電壓：: 2.5 V

最大柵極發射極電壓：: 25 V

Pd - 功耗：: 156 W

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

系列：: FGA50N100BNTD

打包：: 管子

連續集電極電流 Ic 最大值：: 50 A

高度：: 18.9 mm

長度：: 15.8 mm

寬度：: 5 mm

品牌：: 安森美半導體/飛兆半導體

連續集電極電流：: 50 A

柵極-發射極漏電流：: +/- 500 nA

產品類別：: IGBT晶體管

出廠包裝數量：: 450

子類別：: IGBT

單位重量：: 0.225789 oz

Tags: FGA50N100BNTD, FGA50N100B, FGA50N10, FGA50N1, FGA50N, FGA5, FGA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FGA50N100BNTDTU 描述

*** Source Electronics: IGBT 1000V 50A 156W TO3P / Trans IGBT Chip N-CH 1000V 50A 156000mW 3-Pin(3+Tab) TO-3P Tube

***ark: Transistor,igbt,n-Chan+Diode,1Kv V(Br)Ces,50A I(C),to-247Var

***th Star Micro: Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for Induction Heating ( I-H ) applications

***rchild Semiconductor: Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder , induction heating and microwave oven applications.

***ark: Transistor,igbt,n-Chan+Diode,1Kv V(Br)Ces,42A I(C),to-264 Rohs Compliant: Yes

***ure Electronics: FGL60N100BNTD Series 1000 V 60 A Through Hole NPT Trench IGBT - TO-264

***rchild Semiconductor: Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.

***ernational Rectifier: 1200V UltraFast Discrete IGBT in a TO-247 package with UltraFast Soft Recovery Diode

***ical: Trans IGBT Chip N-CH 1200V 50A 180000mW 3-Pin(3+Tab) TO-247AC Tube

***ment14 APAC: TRANSISTOR, BIPOLAR, N CHANNEL, 1.2KV, TO-247AD; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.9V; Power Dissipation Pd:180W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:3Pins; Product Range:-

***p One Stop Global: Trans IGBT Chip N-CH 1200V 41A 160000mW 3-Pin(3+Tab) TO-247AC Tube

***(Formerly Allied Electronics): 1200V ULTRAFAST 5-40 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE | Infineon IRG4PH40UPBF

***ure Electronics: IRG4PH40U Series 1200 V 21 A N-Channel UltraFast Speed IGBT - TO-247AC

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.43 V Current release time: 180 ns Power dissipation: 160 W

***ment14 APAC: IGBT, 1200V, 30A, TO-247AC; Transistor Type:IGBT; DC Collector Current:41A; Collector Emitter Voltage Vces:3.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; Current Ic Continuous a Max:30A; Current Temperature:25°C; Device Marking:IRG4PH40U; Fall Time Max:190ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:120A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

***ical: Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-220AB

***ure Electronics: IXGP Series 1200 V 40 A Flange Mount GEN X3 IGBT - TO-220AB

***nell: IGBT,1200V,20A,TO-220AB; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 180W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-220AB; No. of Pins: 3Pins

***p One Stop Global: Trans IGBT Chip N-CH 900V 51A 200000mW 3-Pin(3+Tab) TO-247AC Tube

***ineon SCT: 900V Warp 20-100 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 900 V Collector-emitter saturation voltage: 2.25 V Current release time: 150 ns Power dissipation: 200 W

***nell: IGBT, TO-247; Collector Emitter Saturation Voltage Vce(on): 2.7V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 900V; Transistor Case Style: TO-247; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cur

***ark: MOSFET; Transistor Type:MOSFET; Package/Case:TO-247AC; Power Dissipation, Pd:200W; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:51A; Mounting Type:Through Hole; Voltage Rating:900V ;RoHS Compliant: Yes

***ment14 APAC: IGBT, 900V, 51A, TO-247AC; Transistor Type:IGBT; DC Collector Current:51A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:900V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:51A; Current Temperature:25°C; Device Marking:IRG4PF50WPbF; Fall Time Max:220ns; Fall Time tf:220ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:204A; Rise Time:26ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:900V

***ure Electronics: IXA20I1200PB Series 1200 V 38 A Through Hole Silicon IGBT - TO-220-3

***el Electronic: IXYS SEMICONDUCTOR IXA20I1200PB IGBT Single Transistor, 33 A, 2.1 V, 130 W, 1.2 kV, TO-220AB, 3 Pins

***nell: IGBT,1200V,33A,TO-220; DC Collector Current: 33A; Collector Emitter Saturation Voltage Vce(on): 2.1V; Power Dissipation Pd: 130W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-220AB; No. of Pins: 3Pins;

***ark: Igbt, 1200V, 33A, To-220; Continuous Collector Current:33A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:130W; Collector Emitter Voltage Max:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:- Rohs Compliant: Yes

FGA50N100BNTDTU 更多信息

PowerTrench® MOSFETs: ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.

Market price

型號	製造商	描述	庫存	價格
FGA50N100BNTDTU DISTI # 31320094	ON Semiconductor	1000V, 50A NPT-TRENCH IGBT CO-	2250	500:$2.8710 450:$3.1977
FGA50N100BNTDTU DISTI # 11744703	ON Semiconductor	1000V, 50A NPT-TRENCH IGBT CO-	270	500:$2.8710 270:$3.1977
FGA50N100BNTDTU DISTI # FGA50N100BNTDTU-ND	ON Semiconductor	IGBT 1000V 50A 156W TO3P RoHS: Compliant Min Qty: 1 Container: Tube	448In Stock	2700:$2.4461 900:$2.9004 450:$3.2323 25:$3.9312 10:$4.1580 1:$4.6300
FGA50N100BNTDTU DISTI # FGA50N100BNTDTU	ON Semiconductor	Trans IGBT Chip N-CH 1KV 50A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FGA50N100BNTDTU) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€1.9900 500:€2.0900 100:€2.1900 50:€2.2900 25:€2.3900 10:€2.4900 1:€2.6900
FGA50N100BNTDTU DISTI # FGA50N100BNTDTU	ON Semiconductor	Trans IGBT Chip N-CH 1KV 50A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FGA50N100BNTDTU) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	4500:$2.0900 450:$2.1900 900:$2.1900 1800:$2.1900 2700:$2.1900
FGA50N100BNTDTU DISTI # 86K1436	ON Semiconductor	TRANSISTOR,IGBT,N-CHAN+DIODE,1kV V(BR)CES,50A I(C),TO-247var	0	10000:$2.3700 2500:$2.5100 1000:$2.6300 500:$3.0800 100:$3.4200 10:$4.1200 1:$5.0800
FGA50N100BNTDTU DISTI # 512-FGA50N100BNTDTU	ON Semiconductor	IGBT Transistors 600V 4 0A UFD RoHS: Compliant	427	1:$4.6200 10:$3.9300 100:$3.4000 250:$3.2300 500:$2.9000
FGA50N100BNTDTU DISTI # 8070751P	ON Semiconductor	IGBTFAIRCHILDFGA50N100BNTDTU, TU	432	200:£2.1050 100:£2.2000 40:£2.3550 10:£2.6900
FGA50N100BNTDTU DISTI # FGA50N100BNTDTU	ON Semiconductor	Transistor: IGBT,1kV,35A,63W,TO3P	416	1:$4.5700 3:$4.2400 10:$3.4700 30:$3.0200

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