NGTB30N60L2WG

Mfr. #:: NGTB30N60L2WG
製造商:: ON Semiconductor
描述:: IGBT Transistors 600V 30A IGBT TO-247
生命週期:: 製造商新產品
數據表:: NGTB30N60L2WG 數據表
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ECAD Model:
更多信息:: NGTB30N60L2WG 更多信息

產品屬性
屬性值

製造商：: 安森美半導體

產品分類：: IGBT晶體管

RoHS：: Y

技術：: 矽

打包：: 管子

品牌：: 安森美半導體

產品類別：: IGBT晶體管

出廠包裝數量：: 30

子類別：: IGBT

Tags: NGTB30N60, NGTB30N6, NGTB30, NGTB3, NGTB, NGT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NGTB30N60L2WG 描述

***emi: IGBT, N-Channel with Low VF Switching Diode, 600V, 30A, VCE(sat)=1.4V

***et: Trans IGBT Chip N-CH 600V 100A 3-Pin TO-247 Tube

***r Electronics: Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel

***ark: Transistor, Igbt, N-Ch, 600V, 30A, To247

***el Electronic: RES SMD 1.96M OHM 1% 1/8W 0805

***nell: TRANSISTOR, IGBT, N-CH, 600V, 30A, TO247; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.4V; Power Dissipation Pd: 225mW; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ical: Trans IGBT Chip N-CH 600V 95A 330000mW 3-Pin(3+Tab) TO-247AC Tube

*** Electronic Components: IGBT Transistors 600V UltraFast IGBT TO-247

***nell: IGBT, 600V, 95A, TO-247AC-3; DC Collector Current: 95A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 330W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AC; No. of Pins: 3

***et Europe: Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247AC Tube

***S.I.T. Europe - USA - Asia: Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel

*** Electronic Components: IGBT Transistors IR IGBT 600V 600V 48A COPAK-247AC

***(Formerly Allied Electronics): Transistor IGBT N-ch 600V 60A TO-247AC

***ineon: Target Applications: Pump; Solar; UPS; Welding

***or: IGBT W/ULTRAFAST SOFT RECOVERY D

***ical: Trans IGBT Chip N-CH 600V 120A 378000mW Automotive 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, SINGLE, AEC-Q101, 600V, TO247AB; DC Collector Current: 120A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 378W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AB; No.

***rchild Semiconductor: Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential.

***p One Stop: Trans IGBT Chip N-CH 600V 80A 260400mW 3-Pin(3+Tab) TO-247A

***i-Key: IGBT 600V 80A 260.4W TO247A

***nell: IGBT, HIGH SPEED, 600V, 80A, TO-247A; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 260.4W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. o

*** Electronic Components: IGBT Transistors IGBT

***S: new, original packaged

***ical: Trans IGBT Chip N-CH 600V 80A 349000mW Automotive 3-Pin(3+Tab) TO-247 Tube

***r Electronics: Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AB

*** Electronic Components: IGBT Transistors 600V, 40A FIELD STOP IGBT

***i-Key: IGBT FIELD STOP 600V 80A TO247-3

***rchild Semiconductor: Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential.

NGTB30N60L2WG 更多信息

NGTB 25-75A Insulated Gate Bipolar Transistors: ON Semiconductor NGTB 25-75A Insulated Gate Bipolar Transistors feature a robust and cost effective Trench construction. They provide superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. These IGBTs are well suited for welding applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.Learn More

Market price

型號	製造商	描述	庫存	價格
NGTB30N60L2WG DISTI # NGTB30N60L2WG-ND	ON Semiconductor	IGBT 600V 30A TO247 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	1020:$2.5431 510:$3.0154 120:$3.5422 30:$4.0870 1:$4.8100
NGTB30N60L2WG DISTI # NGTB30N60L2WG	ON Semiconductor	Trans IGBT Chip N-CH 600V 100A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTB30N60L2WG) RoHS: Compliant Min Qty: 180 Container: Tube	Americas - 0	180:$2.1900 240:$2.1900 420:$2.1900 900:$2.0900 1800:$2.0900
NGTB30N60L2WG DISTI # 31AC0874	ON Semiconductor	TRANSISTOR, IGBT, N-CH, 600V, 30A, TO247,DC Collector Current:30A,Collector Emitter Saturation Voltage Vce(on):1.4V,Power Dissipation Pd:225mW,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-247,No. of , RoHS Compliant: Yes	65	1:$4.5800 10:$3.9000 25:$3.7300 50:$3.5500 100:$3.3800 250:$3.2100 500:$2.8800
NGTB30N60L2WG DISTI # 863-NGTB30N60L2WG	ON Semiconductor	IGBT Transistors 600V 30A IGBT TO-247 RoHS: Compliant	550	1:$4.5800 10:$3.9000 100:$3.3800 250:$3.2100 500:$2.8800 1000:$2.4300 2500:$2.3100
NGTB30N60L2WG DISTI # 2774810	ON Semiconductor	TRANSISTOR, IGBT, N-CH, 600V, 30A, TO247 RoHS: Compliant	65	1:$7.1600 10:$6.2400 100:$5.4100 250:$4.8700 500:$4.2700 1000:$3.8600
NGTB30N60L2WG DISTI # 2774810	ON Semiconductor	TRANSISTOR, IGBT, N-CH, 600V, 30A, TO247 RoHS: Compliant	65	1:£3.8600 10:£2.9500 100:£2.5500 250:£2.4300 500:£2.1800

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