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BUP213

BUP213
Mfr. #:
BUP213
製造商:
Infineon Technologies
描述:
IGBT Transistors IGBT CHIP NPT TECH 1200V 15A
生命週期:
製造商新產品
數據表:
BUP213 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BUP213 DatasheetBUP213 Datasheet (P4-P6)BUP213 Datasheet (P7-P8)
ECAD Model:
產品屬性
屬性值
製造商：
英飛凌
產品分類：
IGBT晶體管
RoHS：
Y
技術：
矽
包裝/案例：
TO-220-3
安裝方式：
通孔
配置：
單身的
集電極-發射極電壓 VCEO 最大值：
1200 V
最大柵極發射極電壓：
20 V
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
打包：
管子
連續集電極電流 Ic 最大值：
32 A
高度：
9.25 mm
長度：
10 mm
寬度：
4.4 mm
品牌：
英飛凌科技
產品類別：
IGBT晶體管
出廠包裝數量：
500
子類別：
IGBT
單位重量：
0.211644 oz
Tags
BUP21, BUP2, BUP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 32A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
***ark
; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:32A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:200W; Package/Case:TO-220AB ;RoHS Compliant: Yes
***nell
IGBT, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:1200V; Current Ic Continuous a Max:32A; Voltage, Vce Sat Max:2.7V; Power Dissipation:200W; Case Style:TO-220AB; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Collector-to-Emitter Breakdown Voltage:1200V; Current, Icm Pulsed:64A; Device Marking:BUP213; No. of Pins:3; Pin Format:GCE; Power, Pd:200W; Power, Ptot:200W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:95ns; Time, Rise:70ns; Transistors, No. of:1
型號 製造商 描述 庫存 價格
BUP213
DISTI # BUP213IN-ND		Infineon Technologies AGIGBT 1200V 32A 200W TO220
RoHS: Not compliant
Min Qty: 500
Container: Tube		Limited Supply - Call
    BUP213
    DISTI # 726-BUP213    		Infineon Technologies AGIGBT Transistors IGBT CHIP NPT TECH 1200V 15A
    RoHS: Compliant    		0
      BUP213 E3045A
      DISTI # 726-BUP213E3045A      		Infineon Technologies AGIGBT Transistors IGBT CHIP NPT TECH 1200V 15A
      RoHS: Compliant      		0
        BUP213Infineon Technologies AGInsulated Gate Bipolar Transistor, 32A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
        RoHS: Not Compliant        		1634
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          可用性
          庫存:
          Available
          訂購:
          5000
          輸入數量:
          BUP213的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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