IRL60HS118

Mfr. #:: IRL60HS118
製造商:: Infineon Technologies
描述:: MOSFET DIFFERENTIATED MOSFETS
生命週期:: 製造商新產品
數據表:: IRL60HS118 數據表
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ECAD Model:

產品屬性
屬性值

製造商：: 英飛凌

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: PQFN-6

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 60 V

Id - 連續漏極電流：: 18.5 A

Rds On - 漏源電阻：: 13.3 mOhms

Vgs th - 柵源閾值電壓：: 1.1 V

Vgs - 柵源電壓：: 20 V

Qg - 門電荷：: 8 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 175 C

Pd - 功耗：: 2.5 W

配置：: 單身的

頻道模式：: 增強

商品名：: 優化MOS

打包：: 捲軸

系列：: OptiMOS 5

晶體管類型：: 1 N-Channel

品牌：: 英飛凌科技

正向跨導 - 最小值：: 17 S

秋季時間：: 5 ns

產品類別：: MOSFET

上升時間：: 21 ns

出廠包裝數量：: 4000

子類別：: MOSFET

典型關斷延遲時間：: 9 ns

典型的開啟延遲時間：: 8.4 ns

第 # 部分別名：: SP001592258

Tags: IRL60, IRL6, IRL

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRL60HS118 描述

***et Japan: Transistor MOSFET N-CH 60V 18.5A 6-Pin PQFN T/R

***ure Electronics: N-Channel 60 V 18.5 A 11.5 W Surface Mount OptiMOSTM5 Power Mosfet - PQFN-6

***ical: Trans MOSFET N-CH Si 60V 10A 6-Pin PQFN EP T/R

***nell: MOSFET, N-CH, 60V, 18.5A, 11.5W, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 18.5A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0133ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 11.5W; Transistor Case Style: PQFN; No. of Pins: 6Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: Available in three different voltage classes (60V, 80V and 100V), Infineons new logic level power MOSFETs are highly suitable for wireless charging, telecom and adapter applications. The PQFN 2x2 package is especially suited for high speed switching and form factor critical applications. It enables higher power density and improved efficiency as well as significant space saving. | Summary of Features: Lowest FOM (R DS(on) x Q g/gd); Optimized Q g, C oss, and Q rr for fast switching; Logic level compatibility; Tiny PQFN 2x2mm package | Benefits: Smallest package footprint; Higher power density designs; Higher switching frequency; Reduced parts count wherever 5V supplies are available; Driven directly from microcontrollers (slow switching); System cost reduction | Target Applications: Wireless charging; Telecom; Adapter

Market price

型號	製造商	描述	庫存	價格
IRL60HS118 DISTI # V72:2272_17076877	Infineon Technologies AG	Trans MOSFET N-CH Si 60V 10A 6-Pin PQFN EP T/R RoHS: Compliant	5963	3000:$0.3493 1000:$0.3528 500:$0.4286 250:$0.4332 100:$0.4378 25:$0.6239 10:$0.6314 1:$0.7366
IRL60HS118 DISTI # IRL60HS118CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 18.5A 6PQFN RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3531In Stock	1000:$0.4639 500:$0.5749 100:$0.7274 10:$0.9080 1:$1.0200
IRL60HS118 DISTI # IRL60HS118DKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 18.5A 6PQFN RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3531In Stock	1000:$0.4639 500:$0.5749 100:$0.7274 10:$0.9080 1:$1.0200
IRL60HS118 DISTI # IRL60HS118TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 18.5A 6PQFN RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	On Order	4000:$0.4370
IRL60HS118 DISTI # 26196756	Infineon Technologies AG	Trans MOSFET N-CH Si 60V 10A 6-Pin PQFN EP T/R RoHS: Compliant	5963	6000:$0.3217 3000:$0.3494 1000:$0.3716 500:$0.4471 250:$0.4481 100:$0.4490 25:$0.6340 19:$0.6367
IRL60HS118 DISTI # 25124704	Infineon Technologies AG	Trans MOSFET N-CH Si 60V 10A 6-Pin PQFN EP T/R RoHS: Compliant	4000	4000:$0.3178
IRL60HS118 DISTI # IRL60HS118	Infineon Technologies AG	Trans MOSFET 60V 18.5A 7-Pin PQFN T/R 4k - Tape and Reel (Alt: IRL60HS118) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.3519 8000:$0.3399 16000:$0.3269 24000:$0.3159 40000:$0.3109
IRL60HS118 DISTI # IRL60HS118	Infineon Technologies AG	Trans MOSFET 60V 18.5A 7-Pin PQFN T/R 4k (Alt: IRL60HS118) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Asia - 0	4000:$0.2960 8000:$0.2838 12000:$0.2800 20000:$0.2691 40000:$0.2656 100000:$0.2590 200000:$0.2526
IRL60HS118 DISTI # SP001592258	Infineon Technologies AG	Trans MOSFET 60V 18.5A 7-Pin PQFN T/R 4k (Alt: SP001592258) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Europe - 0	4000:€0.4429 8000:€0.3629 16000:€0.3319 24000:€0.3069 40000:€0.2849
IRL60HS118 DISTI # 726-IRL60HS118	Infineon Technologies AG	MOSFET DIFFERENTIATED MOSFETS RoHS: Compliant	1916	1:$0.9200 10:$0.7590 100:$0.4900 1000:$0.3920
IRL60HS118NPI DISTI # TMOS2077	Infineon Technologies AG	N-CH 60V 18A 17mOhm LLPQFN2X2 RoHS: Compliant	Stock DE - 100Stock US - 0	1:$42.9900 3:$40.5300 9:$38.0800 25:$34.4000 75:$33.1600
IRL60HS118 DISTI # C1S322000657241	Infineon Technologies AG	Trans MOSFET N-CH Si 60V 10A 6-Pin PQFN EP T/R RoHS: Compliant	7555	1000:$0.3710 500:$0.4030 100:$0.5140 50:$0.5830 25:$0.5970 5:$1.1900
IRL60HS118 DISTI # C1S322000672754	Infineon Technologies AG	Trans MOSFET N-CH Si 60V 10A 6-Pin PQFN EP T/R RoHS: Compliant	4000	4000:$0.4750
IRL60HS118 DISTI # C1S322000653698	Infineon Technologies AG	Trans MOSFET N-CH Si 60V 10A 6-Pin PQFN EP T/R RoHS: Compliant	5963	250:$0.4481 100:$0.4490 25:$0.6340 10:$0.6367

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