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型號 | 製造商 | 描述 | 庫存 | 價格 |
---|---|---|---|---|
BSC031N06NS3GATMA1 DISTI # BSC031N06NS3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 60V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
BSC031N06NS3GATMA1 DISTI # BSC031N06NS3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 60V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Temporarily Out of Stock |
|
BSC031N06NS3GATMA1 DISTI # BSC031N06NS3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 60V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Temporarily Out of Stock |
|
BSC031N06NS3GXT DISTI # BSC031N06NS3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC031N06NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
BSC031N06NS3GATMA1 DISTI # 85X4151 | Infineon Technologies AG | MOSFET, N-CH, 60V, 100A, 139W, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes | 0 |
|
BSC031N06NS3 G DISTI # 726-BSC031N06NS3G | Infineon Technologies AG | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 RoHS: Compliant | 0 |
|
BSC031N06NS3GATMA1 DISTI # 7545257P | Infineon Technologies AG | MOSFET N-CHANNEL 60V 100A TDSON8, RL | 1 |
|
BSC031N06NS3GATMA1 DISTI # 2443369 | Infineon Technologies AG | MOSFET, N CH, 60V, 100A, TDSON-8 RoHS: Compliant | 0 |
|
BSC031N06NS3GATMA1 DISTI # 2443369RL | Infineon Technologies AG | MOSFET, N CH, 60V, 100A, TDSON-8 RoHS: Compliant | 0 |
|
BSC031N06NS3GATMA1 DISTI # 2443369 | Infineon Technologies AG | MOSFET, N CH, 60V, 100A, TDSON-8 RoHS: Compliant | 90 |
|
圖片 | 型號 | 描述 |
---|---|---|
Mfr.#: BSC031N06NS3 G OMO.#: OMO-BSC031N06NS3-G |
MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | |
Mfr.#: BSC031N06NS3 OMO.#: OMO-BSC031N06NS3-1190 |
全新原裝 | |
Mfr.#: BSC031N06NS3 G OMO.#: OMO-BSC031N06NS3-G-1190 |
Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R | |
Mfr.#: BSC031N06NS3G OMO.#: OMO-BSC031N06NS3G-1190 |
Power Field-Effect Transistor, 22A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
Mfr.#: BSC031N06NS3GATMA1 |
MOSFET N-CH 60V 100A TDSON-8 | |
Mfr.#: BSC031N06NS3GATMA1 , TDA |
全新原裝 |