SIR642DP-T1-GE3

SIR642DP-T1-GE3
Mfr. #:
SIR642DP-T1-GE3
製造商:
Vishay / Siliconix
描述:
MOSFET RECOMMENDED ALT 781-SIR470DP-T1-GE3
生命週期:
製造商新產品
數據表:
SIR642DP-T1-GE3 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIR642DP-T1-GE3 DatasheetSIR642DP-T1-GE3 Datasheet (P4-P6)SIR642DP-T1-GE3 Datasheet (P7-P9)SIR642DP-T1-GE3 Datasheet (P10-P12)SIR642DP-T1-GE3 Datasheet (P13)
ECAD Model:
產品屬性
屬性值
製造商:
威世
產品分類:
MOSFET
RoHS:
E
技術:
安裝方式:
貼片/貼片
包裝/案例:
PowerPAK-SO-8
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
40 V
Id - 連續漏極電流:
60 A
Rds On - 漏源電阻:
1.9 mOhms
Vgs th - 柵源閾值電壓:
1.2 V
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
84 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 150 C
Pd - 功耗:
83 W
配置:
單身的
頻道模式:
增強
商品名:
TrenchFET、PowerPAK
打包:
捲軸
高度:
1.04 mm
長度:
6.15 mm
系列:
先生
晶體管類型:
1 N-Channel
寬度:
5.15 mm
品牌:
威世 / Siliconix
正向跨導 - 最小值:
70 S
秋季時間:
9 ns
產品類別:
MOSFET
上升時間:
11 ns
出廠包裝數量:
3000
子類別:
MOSFET
典型關斷延遲時間:
36 ns
典型的開啟延遲時間:
14 ns
單位重量:
0.017870 oz
Tags
SIR642, SIR64, SIR6, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 40V 35.4A 8-Pin PowerPAK SO EP
***et Europe
Trans MOSFET N-CH 40V 60A 8-Pin PowerPAK SO T/R
***ark
N-Ch PowerPAK SO-8 BWL split gate 40V 2.4mohm@10V
***i-Key
MOSFET N-CH 40V 60A PPAK SO-8
***et
N-CH POWERPAK SO-8 BWL SPLIT GATE 40V 2.4MOHM
***
N-CHANNEL 40-V (D-S)
型號 製造商 描述 庫存 價格
SIR642DP-T1-GE3
DISTI # SIR642DP-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 40V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
  • 3000:$0.7618
SIR642DP-T1-GE3
DISTI # SIR642DP-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 40V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    SIR642DP-T1-GE3
    DISTI # SIR642DP-T1-GE3DKR-ND
    Vishay SiliconixMOSFET N-CH 40V 60A PPAK SO-8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      SIR642DP-T1-GE3
      DISTI # SIR642DP-T1-GE3
      Vishay IntertechnologiesTrans MOSFET N-CH 40V 60A 8-Pin PowerPAK SO T/R (Alt: SIR642DP-T1-GE3)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel
      Europe - 0
      • 3000:€1.4999
      • 6000:€1.0759
      • 12000:€0.8719
      • 18000:€0.7709
      • 30000:€0.7379
      SIR642DP-T1-GE3
      DISTI # 78-SIR642DP-T1-GE3
      Vishay IntertechnologiesMOSFET 40V 60A 83W 2.4mohms @ 10V
      RoHS: Compliant
      0
      • 1:$1.6000
      • 10:$1.3300
      • 100:$1.0300
      • 500:$0.8980
      • 1000:$0.7440
      • 3000:$0.6930
      • 6000:$0.6670
      SIR642DPT1GE3Vishay Intertechnologies 
      RoHS: Compliant
      Europe - 3000
        圖片 型號 描述
        SIR642DP-T1-GE3

        Mfr.#: SIR642DP-T1-GE3

        OMO.#: OMO-SIR642DP-T1-GE3

        MOSFET RECOMMENDED ALT 781-SIR470DP-T1-GE3
        SIR642DP-T1-GE3

        Mfr.#: SIR642DP-T1-GE3

        OMO.#: OMO-SIR642DP-T1-GE3-VISHAY

        IGBT Transistors MOSFET 40V 60A 83W 2.4mohms @ 10V
        SIR642DP-T1-E3

        Mfr.#: SIR642DP-T1-E3

        OMO.#: OMO-SIR642DP-T1-E3-1190

        全新原裝
        SIR642DPT1GE3

        Mfr.#: SIR642DPT1GE3

        OMO.#: OMO-SIR642DPT1GE3-1190

        Power Field-Effect Transistor, 60A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        可用性
        庫存:
        Available
        訂購:
        1985
        輸入數量:
        SIR642DP-T1-GE3的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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