SIHA11N80E-GE3

Mfr. #:: SIHA11N80E-GE3
製造商:: Vishay / Siliconix
描述:: MOSFET 800V Vds 30V Vgs TO-220 FULLPAK
生命週期:: 製造商新產品
數據表:: SIHA11N80E-GE3 數據表
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ECAD Model:
更多信息:: SIHA11N80E-GE3 更多信息

產品屬性
屬性值

製造商：: 威世

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 通孔

包裝/案例：: TO-220FP-3

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 800 V

Id - 連續漏極電流：: 12 A

Rds On - 漏源電阻：: 380 mOhms

Vgs th - 柵源閾值電壓：: 4 V

Vgs - 柵源電壓：: 30 V

Qg - 門電荷：: 88 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 34 W

配置：: 單身的

頻道模式：: 增強

系列：: E

品牌：: 威世 / Siliconix

正向跨導 - 最小值：: 4.5 S

秋季時間：: 18 ns

產品類別：: MOSFET

上升時間：: 15 ns

子類別：: MOSFET

典型關斷延遲時間：: 55 ns

典型的開啟延遲時間：: 18 ns

Tags: SIHA1, SIHA, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHA11N80E-GE3 描述

***et Japan: Transistor MOSFET N-CH 800V 12A 3-Pin TO-220FP

***ark: Mosfet, N-Ch, 800V, 12A, 150Deg C, 34W Rohs Compliant: Yes

***i-Key: MOSFET N-CH 800V 12A TO220

*** Europe: N-CH SINGLE 800V TO220FP

***S: new, original packaged

***: N-CHANNEL 800V

SIHA11N80E-GE3 更多信息

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

型號	製造商	描述	庫存	價格
SIHA11N80E-GE3 DISTI # V99:2348_21764874	Vishay Intertechnologies	SIHA11N80E-GE3	963	2500:$1.6940 1000:$1.7210 500:$2.1140 250:$2.3230 100:$2.3880 10:$2.9430 1:$3.8643
SIHA11N80E-GE3 DISTI # V36:1790_21764874	Vishay Intertechnologies	SIHA11N80E-GE3	0	1000000:$1.7370 500000:$1.7400 100000:$2.0920 10000:$2.7480 1000:$2.8600
SIHA11N80E-GE3 DISTI # SIHA11N80E-GE3-ND	Vishay Siliconix	MOSFET N-CHAN 800V TO-220FP RoHS: Compliant Min Qty: 1 Container: Tube	954In Stock	5000:$1.7123 3000:$1.7791 1000:$1.8728 100:$2.6085 25:$3.0100 10:$3.1840 1:$3.5400
SIHA11N80E-GE3 DISTI # 27527547	Vishay Intertechnologies	SIHA11N80E-GE3	963	2500:$1.6940 1000:$1.7210 500:$2.1140 250:$2.3230 100:$2.3880 10:$2.9430 4:$3.8643
SIHA11N80E-GE3 DISTI # SIHA11N80E-GE3	Vishay Intertechnologies	E Series Power MOSFET Single N-Channel 800V VDS ±30V 12A ID Thin Lead 3-Pin TO-220FP - Tape and Reel (Alt: SIHA11N80E-GE3) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	6000:$1.5900 10000:$1.5900 2000:$1.6900 4000:$1.6900 1000:$1.7900
SIHA11N80E-GE3 DISTI # SIHA11N80E-GE3	Vishay Intertechnologies	E Series Power MOSFET Single N-Channel 800V VDS ±30V 12A ID Thin Lead 3-Pin TO-220FP (Alt: SIHA11N80E-GE3) RoHS: Compliant Min Qty: 1	Europe - 0	500:€1.4900 1000:€1.4900 50:€1.5900 100:€1.5900 25:€1.7900 10:€2.1900 1:€2.7900
SIHA11N80E-GE3 DISTI # 78AC6507	Vishay Intertechnologies	MOSFET, N-CH, 800V, 12A, 150DEG C, 34W,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.38ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes	1000	500:$2.1400 100:$2.4600 50:$2.6400 25:$2.8100 10:$2.9900 1:$3.6100
SIHA11N80E-GE3 DISTI # 78-SIHA11N80E-GE3	Vishay Intertechnologies	MOSFET 800V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant	884	1:$3.5700 10:$2.9600 100:$2.4400 250:$2.3600 500:$2.1200
SIHA11N80E-GE3 DISTI # 2932902	Vishay Intertechnologies	MOSFET, N-CH, 800V, 12A, 150DEG C, 34W	1000	500:£1.5400 250:£1.7100 100:£1.7700 10:£2.1400 1:£2.9200
SIHA11N80E-GE3 DISTI # 2932902	Vishay Intertechnologies	MOSFET, N-CH, 800V, 12A, 150DEG C, 34W RoHS: Compliant	1000	1000:$2.9300 500:$3.0900 250:$3.2800 100:$3.5700 10:$4.1200 1:$4.7300

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