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IRL8113PBF

IRL8113PBF
Mfr. #:
IRL8113PBF
製造商:
Infineon Technologies
描述:
MOSFET MOSFT 30V 105A 23nC 6mOhm Qg log lvl
生命週期:
製造商新產品
數據表:
IRL8113PBF 數據表
交貨:
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支付:
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HTML Datasheet:
IRL8113PBF DatasheetIRL8113PBF Datasheet (P4-P6)IRL8113PBF Datasheet (P7-P9)IRL8113PBF Datasheet (P10-P12)IRL8113PBF Datasheet (P13)
ECAD Model:
更多信息:
IRL8113PBF 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
30 V
Id - 連續漏極電流：
105 A
Rds On - 漏源電阻：
7.1 mOhms
Vgs - 柵源電壓：
20 V
Qg - 門電荷：
23 nC
Pd - 功耗：
110 W
配置：
單身的
打包：
管子
高度：
15.65 mm
長度：
10 mm
晶體管類型：
1 N-Channel
寬度：
4.4 mm
品牌：
英飛凌科技
產品類別：
MOSFET
出廠包裝數量：
1000
子類別：
MOSFET
第 # 部分別名：
SP001576430
單位重量：
0.211644 oz
Tags
IRL8113P, IRL8113, IRL811, IRL81, IRL8, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, N Ch., 30V, 105A, 6 MOHM, 23 NCQG, TO-220AB, Pb-Free
***ure Electronics
Single N-Channel 30 V 6 mOhm 23 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop Global
Trans MOSFET N-CH 30V 105A 3-Pin(3+Tab) TO-220AB Tube
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
***ark
N Channel Mosfet, 30V, 105A, To-220Ab; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:105A; On Resistance Rds(On):0.006Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ment14 APAC
MOSFET, N, 30V, 105A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:105A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:105A; Junction to Case Thermal Resistance A:1.32°C/W; On State resistance @ Vgs = 10V:6ohm; Package / Case:TO-220AB; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:420A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
型號 製造商 描述 庫存 價格
IRL8113PBF
DISTI # V99:2348_13889797		Infineon Technologies AGTrans MOSFET N-CH 30V 105A 3-Pin(3+Tab) TO-220AB Tube740
  • 1000:$0.6723
  • 500:$0.7925
  • 100:$0.8991
  • 10:$1.0915
  • 1:$1.2286
IRL8113PBF
DISTI # IRL8113PBF-ND		Infineon Technologies AGMOSFET N-CH 30V 105A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		514In Stock
  • 1000:$0.8003
  • 500:$1.0137
  • 100:$1.3071
  • 10:$1.6540
  • 1:$1.8700
IRL8113PBF
DISTI # 30282774		Infineon Technologies AGTrans MOSFET N-CH 30V 105A 3-Pin(3+Tab) TO-220AB Tube5050
  • 1000:$0.4656
  • 500:$0.4992
  • 250:$0.5136
  • 100:$0.5376
  • 30:$0.5712
IRL8113PBF
DISTI # 26198072		Infineon Technologies AGTrans MOSFET N-CH 30V 105A 3-Pin(3+Tab) TO-220AB Tube740
  • 500:$0.7925
  • 100:$0.8991
  • 12:$1.0915
IRL8113PBF
DISTI # IRL8113PBF		Infineon Technologies AGTrans MOSFET N-CH 30V 105A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRL8113PBF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 0
  • 1:$0.5619
  • 10:$0.5539
  • 25:$0.5459
  • 50:$0.5379
  • 100:$0.5189
  • 500:$0.5009
  • 1000:$0.4929
IRL8113PBF
DISTI # SP001576430		Infineon Technologies AGTrans MOSFET N-CH 30V 105A 3-Pin(3+Tab) TO-220AB (Alt: SP001576430)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.3719
  • 10:€1.1719
  • 25:€1.1689
  • 50:€1.1659
  • 100:€0.8979
  • 500:€0.7879
  • 1000:€0.6229
IRL8113PBF.
DISTI # 29AC7101		Infineon Technologies AGN CHANNEL MOSFET, 30V, 105A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:105A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:20V,MSL:- RoHS Compliant: Yes0
  • 1:$1.6000
  • 10:$1.3600
  • 100:$1.0500
  • 500:$0.9220
  • 1000:$0.7280
IRL8113PBF
DISTI # 70017978		Infineon Technologies AGIRL8113PBF N-channel MOSFET Transistor,105 A,30 V,3-Pin TO-220AB
RoHS: Compliant		0
  • 900:$1.8700
IRL8113PBF
DISTI # 942-IRL8113PBF		Infineon Technologies AGMOSFET MOSFT 30V 105A 23nC 6mOhm Qg log lvl
RoHS: Compliant		980
  • 1:$1.6000
  • 10:$1.3600
  • 100:$1.0500
  • 500:$0.9220
  • 1000:$0.7280
IRL8113PBFInfineon Technologies AG 
RoHS: Not Compliant		200
  • 1000:$0.3700
  • 500:$0.3900
  • 100:$0.4000
  • 25:$0.4200
  • 1:$0.4500
IRL8113PBFInternational Rectifier 
RoHS: Not Compliant		861
  • 1000:$0.6500
  • 500:$0.6800
  • 100:$0.7100
  • 25:$0.7400
  • 1:$0.7900
IRL8113PBF
DISTI # 6887207		Infineon Technologies AGMOSFET N-CHANNEL 30V 105A HEXFET TO220AB, PK870
  • 5:£1.2400
  • 25:£0.9900
  • 50:£0.8760
  • 250:£0.7600
  • 500:£0.6660
IRL8113PBF
DISTI # IRL8113PBF		Infineon Technologies AGN-LogL 30V 105A 110W 0,006R TO220AB
RoHS: Compliant		430
  • 10:€0.6130
  • 50:€0.3730
  • 200:€0.3130
  • 500:€0.3015
IRL8113PBF
DISTI # 8659931		Infineon Technologies AGMOSFET, N, 30V, 105A, TO-220
RoHS: Compliant		8
  • 5:£1.1300
  • 25:£0.5420
  • 100:£0.5310
  • 250:£0.5200
  • 500:£0.5090
IRL8113PBF
DISTI # C1S322000512559		Infineon Technologies AGTrans MOSFET N-CH 30V 105A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		740
  • 500:$0.7925
  • 100:$0.8991
  • 10:$1.0915
IRL8113PBF
DISTI # XSLY00000001147		INFINEON/IRTO-220AB
RoHS: Compliant		2088
  • 1250:$0.5700
  • 2088:$0.5300
IRL8113PBF
DISTI # 8659931		Infineon Technologies AGMOSFET, N, 30V, 105A, TO-220
RoHS: Compliant		6
  • 1:$2.5400
  • 10:$2.1600
  • 100:$1.6600
  • 500:$1.4600
  • 1000:$1.1600
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LM358P

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OMO.#: OMO-LM358P

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Mfr.#: MCP3208-CI/P

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OMO.#: OMO-LM358P-TEXAS-INSTRUMENTS

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MCP3208-CI/P

Mfr.#: MCP3208-CI/P

OMO.#: OMO-MCP3208-CI-P-MICROCHIP-TECHNOLOGY

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FDMS7660AS

Mfr.#: FDMS7660AS

OMO.#: OMO-FDMS7660AS-ON-SEMICONDUCTOR

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NJM2904D

Mfr.#: NJM2904D

OMO.#: OMO-NJM2904D-NJR-CORPORATION

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可用性
庫存:
987
訂購:
2970
輸入數量:
IRL8113PBF的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$1.59
US$1.59
10
US$1.35
US$13.50
100
US$1.04
US$104.00
500
US$0.92
US$461.00
1000
US$0.73
US$728.00
由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
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