MMRF2007GNR1

MMRF2007GNR1
Mfr. #:
MMRF2007GNR1
製造商:
NXP / Freescale
描述:
RF MOSFET Transistors RF LDMOS Wideband Integrated Power Amplifier, 850-940 MHz, 35 W Avg., 28 V
生命週期:
製造商新產品
數據表:
MMRF2007GNR1 數據表
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ECAD Model:
產品屬性
屬性值
製造商:
恩智浦
產品分類:
射頻 MOSFET 晶體管
晶體管極性:
雙 N 通道
技術:
Id - 連續漏極電流:
40 uA, 320 uA
Vds - 漏源擊穿電壓:
- 500 mV, 70 V
獲得:
32.6 dB
輸出功率:
35 W
最低工作溫度:
- 40 C
最高工作溫度:
+ 150 C
安裝方式:
貼片/貼片
包裝/案例:
TO-270-WBLG-16
打包:
捲軸
工作頻率:
136 MHz to 940 MHz
系列:
MMRF2007
類型:
射頻功率MOSFET
品牌:
恩智浦/飛思卡爾
通道數:
2 Channel
產品類別:
射頻 MOSFET 晶體管
出廠包裝數量:
500
子類別:
MOSFET
Vgs - 柵源電壓:
- 0.5 V, 10 V
Vgs th - 柵源閾值電壓:
2 V, 2 V
第 # 部分別名:
935312376528
單位重量:
0.085451 oz
Tags
MMRF200, MMRF2, MMRF, MMR
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
RF LDMOS Wideband Integrated Power Amplifier, 850-940 MHz, 35 W Avg., 28 V
***W
Amplifier,136 to 940 MHz, 79 W, Typ Gain in dB is 32.6 @ 940 MHz, 28 V, LDMOS,
***i-Key
RF LDMOS WIDEBAND INTEGRATED POW
***et
Power Amp 940MHz Dual 16-Pin TO-270WBLG T/R
型號 製造商 描述 庫存 價格
MMRF2007GNR1
DISTI # V36:1790_17079110
NXP SemiconductorsRF & MW POWER AMPLIFIER0
  • 500000:$61.9000
  • 250000:$61.9100
  • 50000:$63.5100
  • 5000:$67.2400
  • 500:$67.9200
MMRF2007GNR1
DISTI # MMRF2007GNR1-ND
NXP SemiconductorsRF LDMOS WIDEBAND INTEGRATED POW
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 500:$67.9247
MMRF2007GNR1
DISTI # MMRF2007GNR1
Avnet, Inc.Power Amp 940MHz Dual 16-Pin TO-270WBLG T/R - Tape and Reel (Alt: MMRF2007GNR1)
RoHS: Compliant
Min Qty: 500
Container: Reel
Americas - 0
  • 5000:$64.8900
  • 3000:$66.1900
  • 2000:$68.6900
  • 1000:$71.4900
  • 500:$74.3900
MMRF2007GNR1
DISTI # 841-MMRF2007GNR1
NXP SemiconductorsRF MOSFET Transistors MMRF2007GN/FM16///REEL 13 Q2 DP0
    MMRF2007GNR1
    DISTI # MMRF2007GNR1
    NXP SemiconductorsRF & MW POWER AMPLIFIER
    RoHS: Compliant
    0
    • 500:$76.6000
    圖片 型號 描述
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    OMO.#: OMO-MMRF2004NBR1

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    OMO.#: OMO-MMRF2010NR1

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    MMRF2010GNR1

    Mfr.#: MMRF2010GNR1

    OMO.#: OMO-MMRF2010GNR1

    RF MOSFET Transistors Airfast RF LDMOS Integrated Power Amplifier, 1030-1090 MHz, 250 W Peak, 50 V
    MMRF2005NR1

    Mfr.#: MMRF2005NR1

    OMO.#: OMO-MMRF2005NR1

    RF Amplifier Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 728-768 MHz, 920-960 MHz, 3.2 W, 28 V
    MMRF2007GNR1

    Mfr.#: MMRF2007GNR1

    OMO.#: OMO-MMRF2007GNR1

    RF MOSFET Transistors RF LDMOS Wideband Integrated Power Amplifier, 850-940 MHz, 35 W Avg., 28 V
    MMRF2011NT1

    Mfr.#: MMRF2011NT1

    OMO.#: OMO-MMRF2011NT1-NXP-SEMICONDUCTORS

    SINGLE W-CDMA RF LDMOS WIDEBAND
    MMRF2007GNR1

    Mfr.#: MMRF2007GNR1

    OMO.#: OMO-MMRF2007GNR1-NXP-SEMICONDUCTORS

    RF LDMOS WIDEBAND INTEGRATED POW
    MMRF2006NT1

    Mfr.#: MMRF2006NT1

    OMO.#: OMO-MMRF2006NT1-NXP-SEMICONDUCTORS

    RF Amplifier 1805-2170 MHz 2.4W Avg. 28 V
    MMRF2004NBR1

    Mfr.#: MMRF2004NBR1

    OMO.#: OMO-MMRF2004NBR1-NXP-SEMICONDUCTORS

    RF Amplifier 2500-2700 MHz 4 W Avg. 28 V
    MMRF2007NR1

    Mfr.#: MMRF2007NR1

    OMO.#: OMO-MMRF2007NR1-NXP-SEMICONDUCTORS

    RF MOSFET Transistors RF LDMOS Wideband Integrated Power Amplifier, 850-940 MHz, 35 W Avg., 28 V
    可用性
    庫存:
    Available
    訂購:
    4500
    輸入數量:
    MMRF2007GNR1的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
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