FP15R12W1T4BOMA1

Mfr. #:: FP15R12W1T4BOMA1
製造商:: Infineon Technologies
描述:: IGBT MODULE VCES 600V 22A
生命週期:: 製造商新產品
數據表:: FP15R12W1T4BOMA1 數據表
交貨:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

產品屬性
屬性值

Tags: FP15R12W1T4B, FP15R12W1T4, FP15R12W1, FP15R12W, FP15R1, FP15R, FP15, FP1

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FP15R12W1T4BOMA1 描述

***p One Stop Japan: Trans IGBT Module N-CH 1200V 28A 130000mW 23-Pin EASY1B-1 Tray

***ment14 APAC: IGBT, LOW POW, 1200V, 15A, EASYPIM; Transistor Polarity:N Channel; DC Collector Current:15A; Collector Emitter Voltage Vces:1.85V; Power Dissipation Pd:130W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:23; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:130W

***ineon: EasyPIM 1B 1200V PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and NTC. | Summary of Features: Low Switching Losses; Trench IGBT 3; V(CEsat) with positive Temperature Coefficient; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Restistance; Compact Design; Solder Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; aircon

Market price

型號	製造商	描述	庫存	價格
FP15R12W1T4BOMA1 DISTI # V99:2348_18204932	Infineon Technologies AG	Trans IGBT Module N-CH 1200V 28A 130000mW 20-Pin AG-EASY1B-1 Tray RoHS: Compliant	24	100:$34.8900 25:$35.2500 10:$35.6100 1:$35.9700
FP15R12W1T4BOMA1 DISTI # FP15R12W1T4BOMA1-ND	Infineon Technologies AG	IGBT MODULE VCES 600V 22A RoHS: Not compliant Min Qty: 24 Container: Bulk	Temporarily Out of Stock	24:$36.2104
FP15R12W1T4BOMA1 DISTI # 26198716	Infineon Technologies AG	Trans IGBT Module N-CH 1200V 28A 130000mW 20-Pin AG-EASY1B-1 Tray RoHS: Compliant	24	10:$35.6100 1:$35.9700
FP15R12W1T4BOMA1 DISTI # FP15R12W1T4BOMA1	Infineon Technologies AG	LOW POWER EASY - Trays (Alt: FP15R12W1T4BOMA1) RoHS: Compliant Min Qty: 24 Container: Tray	Americas - 0	24:$28.6900 48:$27.6900 96:$26.5900 144:$25.7900 240:$25.2900
FP15R12W1T4 DISTI # 641-FP15R12W1T4	Infineon Technologies AG	IGBT Modules IGBT-MODULE	33	1:$38.4900 5:$38.1000 10:$35.5100 25:$33.9100 100:$30.3200 250:$28.9200
FP15R12W1T4BOMA1 DISTI # 2726159	Infineon Technologies AG	IGBT, MODULE, N-CH, 1.2KV, 28A RoHS: Compliant	25	1:$50.9100 2:$49.9500 5:$47.2800
FP15R12W1T4BOMA1 DISTI # C1S322000683015	Infineon Technologies AG	Trans IGBT Module N-CH 1200V 28A 130000mW 20-Pin EASY1B-1 Tray RoHS: Compliant	24	10:$35.6100 1:$35.9700
FP15R12W1T4BOMA1 DISTI # 2726159	Infineon Technologies AG	IGBT, MODULE, N-CH, 1.2KV, 28A RoHS: Compliant	25	1:£35.4000 5:£34.6900 10:£33.9800

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