STB36NM60ND

Mfr. #:: STB36NM60ND
製造商:: STMicroelectronics
描述:: MOSFET N-CH 600V 29A D2PAK
生命週期:: 製造商新產品
數據表:: STB36NM60ND 數據表
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更多信息:: STB36NM60ND 更多信息 STB36NM60ND Product Details

產品屬性
屬性值

製造商

產品分類: 晶體管 - FET、MOSFET - 單

系列: N 通道 MDmesh

打包: 捲軸

單位重量: 0.139332 oz

安裝方式: 貼片/貼片

包裝盒: TO-252-3

技術: 矽

通道數: 1 Channel

配置: 單身的

晶體管型: 1 N-Channel

鈀功耗: 190 W

最高工作溫度: + 150 C

最低工作溫度: - 55 C

秋季時間: 61.8 ns

上升時間: 53.4 ns

VGS-柵極-源極-電壓: 25 V

Id 連續漏極電流: 29 A

Vds-漏-源-擊穿電壓: 650 V

VGS-th-Gate-Source-Threshold-Voltage: 4 V

Rds-On-Drain-Source-Resistance: 110 mOhms

晶體管極性: N通道

典型關斷延遲時間: 111 ns

典型開啟延遲時間: 30 ns

Qg-門電荷: 80.4 nC

Tags: STB36NM, STB36, STB3, STB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STB36NM60ND 描述

***p One Stop Global: Trans MOSFET N-CH 600V 29A Automotive 3-Pin(2+Tab) D2PAK T/R

***ure Electronics: Single N-Channel 600 V 0.11 Ohm 80.4 nC 190 W Silicon SMT Mosfet - TO-263-3

***icroelectronics: Automotive-grade N-channel 600 V, 0.097 Ohm typ., 29 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

STB36NM60ND 更多信息

N-Channel FDmesh Power MOSFETs: STMicroelectronics N-Channel FDmesh™ Power MOSFETs are a power MOSFET which belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to STMicroelectronic's strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. These MOSFETs feature fast recovery, low input capacitance and gate charge, low gate input resistance, and extremely high dv/dt and avalanche capabilities.

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

Market price

型號	製造商	描述	庫存	價格
STB36NM60ND DISTI # 497-13861-2-ND	STMicroelectronics	MOSFET N-CH 600V 29A D2PAK RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	1000:$3.9600
STB36NM60ND DISTI # 497-13861-1-ND	STMicroelectronics	MOSFET N-CH 600V 29A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	500:$4.7531 100:$5.7645 10:$6.9320 1:$7.7100
STB36NM60ND DISTI # 497-13861-6-ND	STMicroelectronics	MOSFET N-CH 600V 29A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	500:$4.7531 100:$5.7645 10:$6.9320 1:$7.7100
STB36NM60ND DISTI # STB36NM60ND	STMicroelectronics	Trans MOSFET N-CH 600V 29A 3-Pin(2+Tab) D²PAK T/R - Tape and Reel (Alt: STB36NM60ND) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$3.3900 2000:$3.1900 4000:$3.0900 6000:$2.8900 10000:$2.8900
STB36NM60ND DISTI # 511-STB36NM60ND	STMicroelectronics	MOSFET Auto-grade N-CH 650V 29A FDmesh II 0.097 RoHS: Compliant	362	1:$6.0600 10:$5.1500 100:$4.4700 250:$4.2400 500:$3.8000 1000:$3.2100
STB36NM60ND DISTI # 7925701P	STMicroelectronics	MOSFET N-CH 600V 29A FDMESH D2PAK, RL	96	10:£3.7200 50:£3.4800 150:£3.2300 500:£2.7500
STB36NM60ND	STMicroelectronics	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET RoHS: Compliant	Europe - 990

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