AS4C4M16SA-7BCNTR

AS4C4M16SA-7BCNTR
Mfr. #:
AS4C4M16SA-7BCNTR
製造商:
Alliance Memory
描述:
DRAM
生命週期:
製造商新產品
數據表:
AS4C4M16SA-7BCNTR 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
AS4C4M16SA-7BCNTR 更多信息
產品屬性
屬性值
製造商:
聯盟記憶
產品分類:
動態隨機存取存儲器
RoHS:
Y
類型:
動態隨機存取存儲器
數據總線寬度:
16 bit
組織:
4 M x 16
包裝/案例:
FBGA-54
內存大小:
64 Mbit
最大時鐘頻率:
143 MHz
訪問時間:
5.4 ns
電源電壓 - 最大值:
3.6 V
電源電壓 - 最小值:
3 V
電源電流 - 最大值:
45 mA
最低工作溫度:
0 C
最高工作溫度:
+ 70 C
系列:
AS4C4M16SA
打包:
捲軸
品牌:
聯盟記憶
安裝方式:
貼片/貼片
濕氣敏感:
是的
產品類別:
動態隨機存取存儲器
出廠包裝數量:
2500
子類別:
內存和數據存儲
Tags
AS4C4M16SA-7B, AS4C4M16SA-7, AS4C4M16SA, AS4C4M16S, AS4C4M1, AS4C4M, AS4C4, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E**m
    E**m
    BY

    Working. The quantity corresponds.

    2019-08-22
    J***z
    J***z
    ES

    All good

    2019-04-03
    D***z
    D***z
    ES

    Apparently good quality, lack to test them

    2019-04-07
***ure Electronics
AS4C4M16SA Series 64 Mb (4 M x 16) 3.6 V 143 MHz Surface Mount SDRAM - FBGA-54
***se
SDR 64Mb 4M x 16 3.3V 54BGN 143 MHz Commercial Temp(A) TAPE AND REEL
***metry Electronics
SDRAM 64MB 143MHz 3.3V 4M x 16 54ball FBGA
***or
IC DRAM 64MBIT PARALLEL 54TFBGA
AS4C Series SDRAM
Alliance Memory AS4C Series SDRAM is high-speed CMOS synchronous DRAM containing 64, 128, or 256Mbits. They are internally configured as 4 Banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.Learn More
型號 製造商 描述 庫存 價格
AS4C4M16SA-7BCNTR
DISTI # AS4C4M16SA-7BCNTR-ND
Alliance Memory IncIC DRAM 64M PARALLEL 54TFBGA
RoHS: Not compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 5000:$1.6301
  • 2500:$1.7714
AS4C4M16SA-7BCNTR
DISTI # AS4C4M16SA-7BCNTR
Alliance Memory IncCOMMERCIAL (0 ~ 70°C)/ (Alt: AS4C4M16SA-7BCNTR)
RoHS: Compliant
Min Qty: 2500
Europe - 0
  • 2500:€1.6900
  • 5000:€1.5900
  • 10000:€1.4900
  • 15000:€1.3900
  • 25000:€1.2900
AS4C4M16SA-7BCNTR
DISTI # AS4C4M16SA-7BCNTR
Alliance Memory IncCOMMERCIAL (0 ~ 70°C)/ - Tape and Reel (Alt: AS4C4M16SA-7BCNTR)
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$1.4900
  • 5000:$1.3900
  • 10000:$1.2900
  • 15000:$1.2900
  • 25000:$1.2900
AS4C4M16SA-7BCNTRAlliance Memory IncSDRAM 64M 3.3V 143MHz 4M x 16 54ball BGA2500
    圖片 型號 描述
    AS4C4M16SA-7B2CN

    Mfr.#: AS4C4M16SA-7B2CN

    OMO.#: OMO-AS4C4M16SA-7B2CN

    DRAM 64M 3.3V 143MHz 4M x 16 SDRAM
    AS4C4M16SA-6TIN

    Mfr.#: AS4C4M16SA-6TIN

    OMO.#: OMO-AS4C4M16SA-6TIN

    DRAM
    AS4C4M16SA-6TCNTR

    Mfr.#: AS4C4M16SA-6TCNTR

    OMO.#: OMO-AS4C4M16SA-6TCNTR

    DRAM
    AS4C4M16SA-6BIN

    Mfr.#: AS4C4M16SA-6BIN

    OMO.#: OMO-AS4C4M16SA-6BIN-ALLIANCE-MEMORY

    IC DRAM 64M PARALLEL 54TFBGA
    AS4C4M16SA-6TCN

    Mfr.#: AS4C4M16SA-6TCN

    OMO.#: OMO-AS4C4M16SA-6TCN-ALLIANCE-MEMORY

    IC DRAM 64M PARALLEL 54TSOP
    AS4C4M16SA-6TAN

    Mfr.#: AS4C4M16SA-6TAN

    OMO.#: OMO-AS4C4M16SA-6TAN-ALLIANCE-MEMORY

    IC DRAM 64M PARALLEL 54TSOP
    AS4C4M16D1A-5TCNTR

    Mfr.#: AS4C4M16D1A-5TCNTR

    OMO.#: OMO-AS4C4M16D1A-5TCNTR-ALLIANCE-MEMORY

    IC DRAM 64M PARALLEL 66TSOP II
    AS4C4M16SA-6TCNTR

    Mfr.#: AS4C4M16SA-6TCNTR

    OMO.#: OMO-AS4C4M16SA-6TCNTR-ALLIANCE-MEMORY

    IC DRAM 64M PARALLEL 54TSOP
    AS4C4M16S-6TCN

    Mfr.#: AS4C4M16S-6TCN

    OMO.#: OMO-AS4C4M16S-6TCN-ALLIANCE-MEMORY

    DRAM 64M SDRAM 4M X 16 166MHz
    AS4C4M16SA-5TCN

    Mfr.#: AS4C4M16SA-5TCN

    OMO.#: OMO-AS4C4M16SA-5TCN-ALLIANCE-MEMORY

    SDRAM 64MBIT 200MHZ 54TSOP
    可用性
    庫存:
    Available
    訂購:
    4500
    輸入數量:
    AS4C4M16SA-7BCNTR的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格(美元)
    數量
    單價
    小計金額
    1
    US$2.67
    US$2.67
    10
    US$2.40
    US$24.00
    25
    US$2.36
    US$59.00
    100
    US$2.11
    US$211.00
    250
    US$2.04
    US$510.00
    500
    US$2.03
    US$1 015.00
    1000
    US$1.89
    US$1 890.00
    從...開始
    最新產品
    • MEMS Motion Sensors
      ON Semiconductor takes a system-based approach to its MEMS motion solutions, making it easy for designers to achieve both high performance and fast time to market.
    • Economic Housing (EH) System
      Phoenix Contact's two-piece EH system is easy to use and perfect for building automation and semi-industrial applications.
    • NCP510x High Voltage MOSFET and IGBT Gate Drivers
      ON Semiconductor's NCP510x high voltage MOSFET and IGBT gate drivers provide two outputs for direct drive of two N-channel power MOSFETs or IGBTs.
    • ATTINY1607/807 AVR® MCUs
      Microchip's ATtiny807/1607 microcontrollers use the high-performance, low-power AVR® RISC architecture.
    • Compare AS4C4M16SA-7BCNTR
      AS4C4M16SA7B2CN vs AS4C4M16SA7B2CNTR vs AS4C4M16SA7BCN
    • Grid-EYE Infrared Array Sensors
      Panasonics' Grid-EYE infrared array sensor is a thermopile-typed infrared sensor which detects quantity of infrared ray.
    Top