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SPP20N60C3XKSA1

SPP20N60C3XKSA1
Mfr. #:
SPP20N60C3XKSA1
製造商:
Infineon Technologies
描述:
MOSFET N-Ch 650V 20.7A TO220-3
生命週期:
製造商新產品
數據表:
SPP20N60C3XKSA1 數據表
交貨:
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ECAD Model:
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
通孔
包裝/案例：
TO-220-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
600 V
Id - 連續漏極電流：
20.7 A
Rds On - 漏源電阻：
190 mOhms
Vgs th - 柵源閾值電壓：
2.1 V
Vgs - 柵源電壓：
10 V
Qg - 門電荷：
87 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
208 W
配置：
單身的
頻道模式：
增強
商品名：
酷摩
打包：
管子
高度：
15.65 mm
長度：
10 mm
系列：
CoolMOS C3
晶體管類型：
1 N-Channel
寬度：
4.4 mm
品牌：
英飛凌科技
秋季時間：
4.5 ns
產品類別：
MOSFET
上升時間：
5 ns
出廠包裝數量：
500
子類別：
MOSFET
典型關斷延遲時間：
67 ns
典型的開啟延遲時間：
10 ns
第 # 部分別名：
SP000681058 SPP20N60C3 SPP2N6C3XK
單位重量：
0.211644 oz
Tags
SPP20N60C3, SPP20N60C, SPP20N60, SPP20N6, SPP20N, SPP20, SPP2, SPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650 V 190 mOhm 114 nC CoolMOS™ Power Mosfet - TO-220-3
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N, COOLMOS, 650V, 20.7V, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 20.7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.19ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs
***ineon
Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
***ical
Trans MOSFET N-CH 600V 23.8A 3-Pin(3+Tab) TO-220
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 7.0pF 50volts C0G +/-0.5pF
***ineon SCT
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS
***ment14 APAC
MOSFET,N CH,600V,23.8A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:23.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:176W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:23.8A; Power Dissipation Pd:176W; Voltage Vgs Max:30V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 23.8 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) mOhm = 160 / Gate-Source Voltage V = 20 / Fall Time ns = 8 / Rise Time ns = 13 / Turn-OFF Delay Time ns = 96 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 176
***ineon
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting
***icroelectronics
N-channel 500 V, 0.135 Ohm typ., 21 A MDmesh(TM) II Power MOSFET in TO-220FP package
***ure Electronics
N-Channel 500 V 158 mOhm MDmesh™ II Power MOSFET - TO-220FP
***ical
Trans MOSFET N-CH 500V 21A 3-Pin(3+Tab) TO-220FP Tube
***nell
MOSFET, N CH, 500V, 21A, TO 220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.135ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Po
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 21A I(D), 500V, 0.158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ical
Trans MOSFET N-CH 500V 17A 3-Pin(3+Tab) TO-220AB Tube
*** Stop Electro
Power Field-Effect Transistor, 17A I(D), 500V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
***nell
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 550V; On Resistance Rds(on): 0.18ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 139W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 17A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 550V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
***emi
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 22 A, 165 mΩ, TO-220F
***Yang
Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***enic
600V 22A 165m´Î@10V11A 39W 4V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
*** Stop Electro
Power Field-Effect Transistor, 22A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET Transistor; Transistor Polarity: N; MOSFET Transistor; Transistor Polarity: N Channel; Drain Source Voltage Vds: 600V; Continuous Drain Current Id: 22A; On Resistance Rds(on): 0.14ohm; Transistor Mounting: Through Hole; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***ow.cn
Trans MOSFET N-CH Si 600V 26.7A Automotive 3-Pin(3+Tab) TO-220FP Tube
***el Electronic
In a Tube of 450, N-Channel MOSFET, 26.7 A, 600 V, 3 + Tab-Pin TO-220FP Infineon IPAW60R190CEXKSA1
***ineon SCT
Improved creepage distance for open frame power supplies, PG-TO220-3, RoHS
***ark
Mosfet, N-Ch, 600V, 26.7A, To-220Fp-3; Transistor Polarity:n Channel; Continuous Drain Current Id:26.7A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.17Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
Improved creepage distance for open frame power supplies | Summary of Features: Increased distance of 4.25mm between pins to meet wide creepage requirements; Package height and width identical with standard TO-220 FullPAK package | Benefits: Wider creepage between pins to avoid arcing even in polluted environment; Compatible with EN 60664-1 standard group III; Cost savings in creepage protection by removing additional efforts spent in alternative solutions today; Fully automated PCB assembly; FullPAK benefit of isolation | Target Applications: Consumer; PC power
***emi
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 20.6 A, 190 mΩ, TO-220F
***Yang
Trans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
*** Stop Electro
Power Field-Effect Transistor, 20.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, N-CH, 600V, 20.6A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:20.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
型號 製造商 描述 庫存 價格
SPP20N60C3XKSA1
DISTI # SPP20N60C3XKSA1-ND		Infineon Technologies AGMOSFET N-CH 600V 20.7A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1000:$2.7381
  • 500:$3.2466
  • 100:$4.0094
  • 50:$4.4006
  • 1:$5.4800
SPP20N60C3XK
DISTI # SPP20N60C3XKSA1		Infineon Technologies AGTrans MOSFET N-CH 600V 20.7A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: SPP20N60C3XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$2.4900
  • 502:$2.3900
  • 1002:$2.2900
  • 2500:$2.2900
  • 5000:$2.1900
SPP20N60C3XKSA1
DISTI # 95W8643		Infineon Technologies AGMOSFET, N-CH, 600V, 20.7A, 208W, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:20.7A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.16ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
  • 1:$4.7100
  • 10:$4.0000
  • 25:$3.8200
  • 50:$3.6500
  • 100:$3.4700
  • 250:$3.2900
  • 500:$2.9600
SPP20N60C3XKSA1
DISTI # 726-SPP20N60C3XKSA1		Infineon Technologies AGMOSFET N-Ch 650V 20.7A TO220-3
RoHS: Compliant		0
  • 1:$4.7100
  • 10:$4.0000
  • 100:$3.4700
  • 250:$3.2900
  • 500:$2.9600
SPP20N60C3XKSA1
DISTI # 2325467		Infineon Technologies AGMOSFET, N-CH, 650V, 20.7A, TO-220
RoHS: Compliant		0
  • 1:$5.3800
  • 5:$5.0300
  • 20:$4.4500
  • 50:$4.2000
  • 100:$3.9900
SPP20N60C3XKSA1
DISTI # 2325467		Infineon Technologies AGMOSFET, N-CH, 650V, 20.7A, TO-220
RoHS: Compliant		0
  • 1:£3.5300
  • 10:£2.3100
  • 100:£2.2800
  • 250:£2.2500
  • 500:£2.2200
圖片 型號 描述
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Mfr.#: SPP20N60CFDXKSA1

OMO.#: OMO-SPP20N60CFDXKSA1

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Mfr.#: SPP20N60CFD

OMO.#: OMO-SPP20N60CFD-128

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SPP20N60C3

Mfr.#: SPP20N60C3

OMO.#: OMO-SPP20N60C3-317

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SPP20N60C2 20N60C2

Mfr.#: SPP20N60C2 20N60C2

OMO.#: OMO-SPP20N60C2-20N60C2-1190

 全新原裝
SPP20N60C3,20N60C3,

Mfr.#: SPP20N60C3,20N60C3,

OMO.#: OMO-SPP20N60C3-20N60C3--1190

 全新原裝
SPP20N60C3/IXFP22N65X2

Mfr.#: SPP20N60C3/IXFP22N65X2

OMO.#: OMO-SPP20N60C3-IXFP22N65X2-1190

 全新原裝
SPP20N60C3XKSA1

Mfr.#: SPP20N60C3XKSA1

OMO.#: OMO-SPP20N60C3XKSA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 600V 20.7A TO-220
SPP20N60S5XKSA1

Mfr.#: SPP20N60S5XKSA1

OMO.#: OMO-SPP20N60S5XKSA1-INFINEON-TECHNOLOGIES

 HIGH POWER_LEGACY
SPP20N65C3 20N65C3

Mfr.#: SPP20N65C3 20N65C3

OMO.#: OMO-SPP20N65C3-20N65C3-1190

 全新原裝
SPP20N6C3

Mfr.#: SPP20N6C3

OMO.#: OMO-SPP20N6C3-1190

 全新原裝
可用性
庫存:
Available
訂購:
3500
輸入數量:
SPP20N60C3XKSA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$4.70
US$4.70
10
US$4.00
US$40.00
100
US$3.46
US$346.00
250
US$3.29
US$822.50
500
US$2.95
US$1 475.00
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