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| 型號 | 製造商 | 描述 | 庫存 | 價格 |
|---|---|---|---|---|
| BSC030P03NS3GAUMA1 DISTI # V72:2272_06383303 | Infineon Technologies AG | Trans MOSFET P-CH 30V 25.4A Automotive 8-Pin TDSON EP T/R RoHS: Compliant | 10000 |
|
| BSC030P03NS3GAUMA1 DISTI # BSC030P03NS3GAUMA1CT-ND | Infineon Technologies AG | MOSFET P-CH 30V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 99845In Stock |
|
| BSC030P03NS3GAUMA1 DISTI # BSC030P03NS3GAUMA1DKR-ND | Infineon Technologies AG | MOSFET P-CH 30V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 99845In Stock |
|
| BSC030P03NS3GAUMA1 DISTI # BSC030P03NS3GAUMA1TR-ND | Infineon Technologies AG | MOSFET P-CH 30V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | 95000In Stock |
|
| BSC030P03NS3GAUMA1 DISTI # 31301552 | Infineon Technologies AG | Trans MOSFET P-CH 30V 25.4A Automotive 8-Pin TDSON EP T/R RoHS: Compliant | 10000 |
|
| BSC030P03NS3GXT DISTI # BSC030P03NS3GAUMA1 | Infineon Technologies AG | Trans MOSFET P-CH 30V 25.4A 8-Pin TDSON EP - Tape and Reel (Alt: BSC030P03NS3GAUMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC030P03NS3GAUMA1 DISTI # 85X4150 | Infineon Technologies AG | MOSFET, P-CH, -30V, -100A, 125W,Transistor Polarity:P Channel,Continuous Drain Current Id:-100A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0023ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V RoHS Compliant: Yes | 0 |
|
| BSC030P03NS3 G DISTI # 726-BSC030P03NS3G | Infineon Technologies AG | MOSFET P-Ch -30V 25.4A TDSON-8 OptiMOS P3 RoHS: Compliant | 8450 |
|
| BSC030P03NS3GAUMA1 DISTI # 726-BSC030P03NS3GAUM | Infineon Technologies AG | MOSFET P-Ch -30V 25.4A TDSON-8 OptiMOS P3 RoHS: Compliant | 1535 |
|
| BSC030P03NS3GAUMA1 DISTI # 9064309P | Infineon Technologies AG | MOSFET P-CHANNEL 30V 25.4A TDSON8 EP, RL | 5490 |
|
| BSC030P03NS3GAUMA1 DISTI # 9064309 | Infineon Technologies AG | MOSFET P-CHANNEL 30V 25.4A TDSON8 EP, PK | 380 |
|
| BSC030P03NS3GAUMA1 DISTI # 2443466 | Infineon Technologies AG | MOSFET, P CH, -30V, -100A, TDSON-8 RoHS: Compliant | 4646 |
|
| BSC030P03NS3GAUMA1 DISTI # 2443466RL | Infineon Technologies AG | MOSFET, P CH, -30V, -100A, TDSON-8 RoHS: Compliant | 0 |
|
| BSC030P03NS3GAUMA1 DISTI # 2443466 | Infineon Technologies AG | MOSFET, P CH, -30V, -100A, TDSON-8 RoHS: Compliant | 4646 |
|
| 圖片 | 型號 | 描述 |
|---|---|---|
|
Mfr.#: BSC007N04LS6ATMA1 OMO.#: OMO-BSC007N04LS6ATMA1 |
MOSFET |
|
Mfr.#: BSC057N03MSGATMA1 OMO.#: OMO-BSC057N03MSGATMA1 |
MOSFET LV POWER MOS |
|
|
Mfr.#: BSC017N04NS OMO.#: OMO-BSC017N04NS-1190 |
全新原裝 |
|
|
Mfr.#: BSC019N04NS G) OMO.#: OMO-BSC019N04NS-G--1190 |
全新原裝 |
|
|
Mfr.#: BSC025N03MS OMO.#: OMO-BSC025N03MS-1190 |
23 A, 30 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET |
|
|
Mfr.#: BSC046N02KS OMO.#: OMO-BSC046N02KS-1190 |
全新原裝 |
|
|
Mfr.#: BSC070N10NS3 G OMO.#: OMO-BSC070N10NS3-G-1190 |
MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSC091N03MSCGATMA1 OMO.#: OMO-BSC091N03MSCGATMA1-1190 |
Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSC0923NDI , TDZ TR 24 , |
全新原裝 |
|
Mfr.#: BSC098N10NS5ATMA1 |
IGBT Transistors MOSFET Pwr transistor 100V OptiMOS 5 |