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FQD5N60CTM

FQD5N60CTM
Mfr. #:
FQD5N60CTM
製造商:
ON Semiconductor / Fairchild
描述:
MOSFET 600V N-Channel Adv Q-FET C-Series
生命週期:
製造商新產品
數據表:
FQD5N60CTM 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
產品屬性
屬性值
製造商：
安森美半導體
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TO-252-3
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
600 V
Id - 連續漏極電流：
2.8 A
Rds On - 漏源電阻：
2.5 Ohms
Vgs - 柵源電壓：
30 V
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
2.5 W
配置：
單身的
頻道模式：
增強
打包：
捲軸
高度：
2.39 mm
長度：
6.73 mm
系列：
FQD5N60C
晶體管類型：
1 N-Channel
寬度：
6.22 mm
品牌：
安森美半導體/飛兆半導體
秋季時間：
46 ns
產品類別：
MOSFET
上升時間：
42 ns
出廠包裝數量：
2500
子類別：
MOSFET
典型關斷延遲時間：
38 ns
典型的開啟延遲時間：
10 ns
第 # 部分別名：
FQD5N60CTM_NL
單位重量：
0.009184 oz
Tags
FQD5N60CTM, FQD5N60CT, FQD5N60C, FQD5N60, FQD5N6, FQD5N, FQD5, FQD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, QFET®, 600 V, 2.8 A, 2.5 Ω, DPAK
***ure Electronics
Single N-Channel 600 V 2.5 Ohm 19 nC 2.5 W DMOS SMT Mosfet - TO-252-3
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, UniFETTM II, 600 V, 3.4 A, 2.5 Ω, DPAK
***ure Electronics
FDD4N60NZ Series 600 V 3.4 A 2.5 Ohm N-Channel UniFETTM 11 Mosfet - DPAK-3
*** Stop Electro
Power Field-Effect Transistor, 3.4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
UniFETTM Ultra FRFETTM MOSFET, N-Channel, 500 V, 3 A, 2 Ω, DPAK
***r Electronics
Power Field-Effect Transistor, 3A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***ure Electronics
Single N-Channel 600 V 4.4 Ohms Surface Mount Power Mosfet - TO-252
*** Stop Electro
Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:2A; On Resistance Rds(On):4.4Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pins Rohs Compliant: No
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) Ohm = 4.4 / Gate-Source Voltage V = 20 / Fall Time ns = 25 / Rise Time ns = 23 / Turn-OFF Delay Time ns = 30 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 42
***ure Electronics
Single N-Channel 500 V 3 O 19 nC Surface Mount Power Mosfet - TO-252 (DPAK)
***ical
Trans MOSFET N-CH 500V 2.4A 3-Pin(2+Tab) DPAK T/R
***S
French Electronic Distributor since 1988
***ure Electronics
Single N-Channel 500 V 3 Ohms Surface Mount Power Mosfet - TO-252
***SIT Distribution GmbH
Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
N Channel Mosfet, 500V, 2.4A, D-Pak; Channel Type:n Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:2.4A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: No
***ment14 APAC
MOSFET, N, 500V, 2.4A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:500V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:2.4A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3°C/W; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:42W; Power Dissipation Pd:42W; Pulse Current Idm:8A; SMD Marking:IRFR420; Termination Type:SMD; Voltage Vds Typ:500V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***roFlash
Mosfet Transistor, N Channel, 3 A, 500 V, 2.3 Ohm, 10 V, 3.75 V Rohs Compliant: Yes
***icroelectronics
N-CHANNEL 500V - 2.4 Ohm - 3A DPAK Zener-Protected SuperMESH(TM) PowerMOSFET
*** Source Electronics
MOSFET N-CH 500V 3A DPAK / Trans MOSFET N-CH 500V 3A 3-Pin(2+Tab) DPAK T/R
***ure Electronics
N-Channel 500 V 2.7 Ohm Surface Mount SuperMESH™ Power MosFet - TO-252-3
***r Electronics
Power Field-Effect Transistor, 3A I(D), 500V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ment14 APAC
MOSFET, N-CH, 500V, 3A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Source Voltage Vds:500V; On Resistance
***nell
MOSFET, N-CH, 500V, 3A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 2.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 45W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C
型號 製造商 描述 庫存 價格
FQD5N60CTM
DISTI # V72:2272_06301260		ON Semiconductor600V, 2.8A, NCH MOSFET2267
  • 1000:$0.4389
  • 500:$0.5467
  • 250:$0.5646
  • 100:$0.6273
  • 25:$0.7330
  • 10:$0.8959
  • 1:$1.0134
FQD5N60CTM
DISTI # V36:1790_06301260		ON Semiconductor600V, 2.8A, NCH MOSFET0
  • 2500000:$0.2975
  • 1250000:$0.2979
  • 250000:$0.3392
  • 25000:$0.4182
  • 2500:$0.4317
FQD5N60CTM
DISTI # FQD5N60CTMCT-ND		ON SemiconductorMOSFET N-CH 600V 2.8A DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1963In Stock
  • 1000:$0.4764
  • 500:$0.6035
  • 100:$0.7306
  • 10:$0.9370
  • 1:$1.0500
FQD5N60CTM
DISTI # FQD5N60CTMDKR-ND		ON SemiconductorMOSFET N-CH 600V 2.8A DPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1963In Stock
  • 1000:$0.4764
  • 500:$0.6035
  • 100:$0.7306
  • 10:$0.9370
  • 1:$1.0500
FQD5N60CTM-WS
DISTI # FQD5N60CTM-WSTR-ND		ON SemiconductorMOSFET N-CH 600V 2.8A
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
  • 2500:$0.4528
FQD5N60CTM-WS
DISTI # FQD5N60CTM-WSCT-ND		ON SemiconductorMOSFET N-CH 600V 2.8A
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    FQD5N60CTM-WS
    DISTI # FQD5N60CTM-WSDKR-ND    		ON SemiconductorMOSFET N-CH 600V 2.8A
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      FQD5N60CTM_F080
      DISTI # FQD5N60CTM_F080-ND      		ON SemiconductorMOSFET N-CH 600V 2.8A DPAK
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape & Reel (TR)      		Limited Supply - Call
        FQD5N60CTM
        DISTI # FQD5N60CTMTR-ND        		ON SemiconductorMOSFET N-CH 600V 2.8A DPAK
        RoHS: Compliant
        Min Qty: 2500
        Container: Tape & Reel (TR)        		Temporarily Out of Stock
        • 25000:$0.3906
        • 12500:$0.3947
        • 5000:$0.4102
        • 2500:$0.4317
        FQD5N60CTM
        DISTI # 33135261        		ON Semiconductor600V, 2.8A, NCH MOSFET2267
        • 18:$1.0134
        FQD5N60CTM
        DISTI # FQD5N60CTM        		ON SemiconductorTrans MOSFET N-CH 600V 2.8A 3-Pin(2+Tab) DPAK T/R (Alt: FQD5N60CTM)
        RoHS: Compliant
        Min Qty: 2500
        Container: Tape and Reel        		Europe - 2500
        • 25000:€0.2919
        • 15000:€0.3149
        • 10000:€0.3409
        • 5000:€0.3719
        • 2500:€0.4549
        FQD5N60CTM
        DISTI # FQD5N60CTM        		ON SemiconductorTrans MOSFET N-CH 600V 2.8A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD5N60CTM)
        RoHS: Compliant
        Min Qty: 2500
        Container: Reel        		Americas - 2500
        • 25000:$0.3153
        • 15000:$0.3233
        • 10000:$0.3274
        • 5000:$0.3317
        • 2500:$0.3339
        FQD5N60CTM
        DISTI # FQD5N60CTM        		ON SemiconductorTrans MOSFET N-CH 600V 2.8A 3-Pin(2+Tab) DPAK T/R - Bulk (Alt: FQD5N60CTM)
        RoHS: Compliant
        Min Qty: 1000
        Container: Bulk        		Americas - 0
        • 10000:$0.3079
        • 5000:$0.3159
        • 3000:$0.3199
        • 2000:$0.3239
        • 1000:$0.3259
        FQD5N60CTM
        DISTI # 60J0813        		ON SemiconductorPower MOSFET, N Channel, 2.8 A, 600 V, 2 ohm, 10 V, 4 V RoHS Compliant: Yes0
        • 25000:$0.4360
        • 10000:$0.4500
        • 2500:$0.4670
        • 1:$0.4700
        FQD5N60CTM
        DISTI # 31Y1529        		ON SemiconductorMOSFET, N-CH, 600V, 2.8A, TO-252AA-3,Transistor Polarity:N Channel,Continuous Drain Current Id:2.8A,Drain Source Voltage Vds:600V,On Resistance Rds(on):2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Product Range:-RoHS Compliant: Yes432
        • 1000:$0.5180
        • 500:$0.6350
        • 250:$0.6730
        • 100:$0.7090
        • 50:$0.7740
        • 25:$0.8420
        • 10:$0.9030
        • 1:$1.0500
        FQD5N60CTM.
        DISTI # 81AC8728        		ON SemiconductorQFC 600V 2.5OHM DPAK ROHS COMPLIANT: YES0
        • 25000:$0.4360
        • 10000:$0.4500
        • 2500:$0.4670
        • 1:$0.4700
        FQD5N60CTM
        DISTI # 512-FQD5N60CTM        		ON SemiconductorMOSFET 600V N-Channel Adv Q-FET C-Series
        RoHS: Compliant        		4764
        • 1:$0.9600
        • 10:$0.8220
        • 100:$0.6310
        • 500:$0.5580
        • 1000:$0.4400
        • 2500:$0.4200
        FQD5N60CTM-WS
        DISTI # 512-FQD5N60CTM_WS        		ON SemiconductorMOSFET 600V, NCH MOSFET
        RoHS: Compliant        		0
          FQD5N60CTM_F080
          DISTI # 512-FQD5N60CTM-F080          		ON SemiconductorMOSFET Trans MOS N-Ch 600V 2.8A 3-Pin 2+Tab
          RoHS: Compliant          		0
            FQD5N60CTMFairchild Semiconductor Corporation 
            RoHS: Not Compliant            		467
            • 1000:$0.3700
            • 500:$0.3900
            • 100:$0.4000
            • 25:$0.4200
            • 1:$0.4500
            FQD5N60CTM
            DISTI # 8089014P            		ON SemiconductorMOSFETFAIRCHILDFQD5N60CTM, RL640
            • 50:£0.4770
            FQD5N60CTM
            DISTI # 2453898            		ON SemiconductorMOSFET, N-CH, 600V, 2.8A, TO-252AA-3472
            • 500:£0.4040
            • 250:£0.4300
            • 100:£0.4570
            • 25:£0.5960
            • 5:£0.7020
            FQD5N60CTM
            DISTI # 2453898RL            		ON SemiconductorMOSFET, N-CH, 600V, 2.8A, TO-252AA-3
            RoHS: Compliant            		0
            • 2500:$0.6460
            • 1000:$0.6770
            • 500:$0.8580
            • 100:$0.9710
            • 10:$1.2700
            • 1:$1.4800
            FQD5N60CTM
            DISTI # 2453898            		ON SemiconductorMOSFET, N-CH, 600V, 2.8A, TO-252AA-3
            RoHS: Compliant            		432
            • 2500:$0.6460
            • 1000:$0.6770
            • 500:$0.8580
            • 100:$0.9710
            • 10:$1.2700
            • 1:$1.4800
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            IRFR4615TRLPBF

            Mfr.#: IRFR4615TRLPBF

            OMO.#: OMO-IRFR4615TRLPBF

            		 MOSFET MOSFT 150V 33A 42mOhm 26nC Qg
            IRFR9310PBF

            Mfr.#: IRFR9310PBF

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            		 MOSFET P-Chan 400V 1.8 Amp
            C3D02060E

            Mfr.#: C3D02060E

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            		 Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 600V, 2A
            2N7002H-7

            Mfr.#: 2N7002H-7

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            BTS52004EKAXUMA1

            Mfr.#: BTS52004EKAXUMA1

            OMO.#: OMO-BTS52004EKAXUMA1

            		 Power Switch ICs - Power Distribution PROFET
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            		 Solid State Relays - PCB Mount 1-Form-A 400V 120mA Solid State Relay
            可用性
            庫存:
            Available
            訂購:
            1987
            輸入數量:
            FQD5N60CTM的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
            參考價格（美元）
            數量
            單價
            小計金額
            1
            US$0.96
            US$0.96
            10
            US$0.82
            US$8.22
            100
            US$0.63
            US$63.10
            500
            US$0.56
            US$279.00
            1000
            US$0.44
            US$440.00
            由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
            從...開始
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