SIRC18DP-T1-GE3

Name: Vishay - SIRC18DP-T1-GE3
Brand: Vishay
SKU: OMO-6096258
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SIRC18DP-T1-GE3
製造商:: Vishay
描述:: N-Channel 30 V (D-S) MOSFET with Schottky Diode
生命週期:: 製造商新產品
數據表:: SIRC18DP-T1-GE3 數據表
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更多信息:: SIRC18DP-T1-GE3 更多信息

產品屬性
屬性值

Tags: SIRC1, SIRC, SIR

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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIRC18DP-T1-GE3 描述

***et Europe: TrenchFET Gen IV Power MOSFET N-Channel with Schottky Diode 30V VDS +20V -16V VGS 60A ID 8-Pin PowerPAK SOIC T/R

***ical: Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK SO EP T/R

***i-Key: MOSFET N-CH 30V 60A POWERPAKSO-8

***ark: MOSFET, N-CH, 30V, 60A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):850�ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power RoHS Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 30V, 60A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):850µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power Dissipation Pd:54.3W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

***nell: MOSFET, CA-N, 30V, 60A, POWERPAK SO; Polarità Transistor:Canale N; Corrente Continua di Drain Id:60A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):850µohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.4V; Dissipazione di Potenza Pd:54.3W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Gen IV Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)

SIRC18DP-T1-GE3 更多信息

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

型號	製造商	描述	庫存	價格
SIRC18DP-T1-GE3 DISTI # V72:2272_21388849	Vishay Intertechnologies	N-Channel 30 V (D-S) MOSFET with Schottky Diode	4407	75000:$0.5302 30000:$0.5332 15000:$0.5362 6000:$0.5393 3000:$0.5423 1000:$0.5453 500:$0.7157 250:$0.8333 100:$0.8607 50:$0.9001 25:$1.0001 10:$1.1112 1:$1.4801
SIRC18DP-T1-GE3 DISTI # V99:2348_21388849	Vishay Intertechnologies	N-Channel 30 V (D-S) MOSFET with Schottky Diode	0	6000000:$0.5738 3000000:$0.5739 600000:$0.5746 60000:$0.5754 6000:$0.5755
SIRC18DP-T1-GE3 DISTI # SIRC18DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 60A POWERPAKSO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5320In Stock	1000:$0.6351 500:$0.8045 100:$0.9738 10:$1.2490 1:$1.4000
SIRC18DP-T1-GE3 DISTI # SIRC18DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 60A POWERPAKSO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5320In Stock	1000:$0.6351 500:$0.8045 100:$0.9738 10:$1.2490 1:$1.4000
SIRC18DP-T1-GE3 DISTI # SIRC18DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 60A POWERPAKSO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	15000:$0.5262 6000:$0.5467 3000:$0.5755
SIRC18DP-T1-GE3 DISTI # 30209835	Vishay Intertechnologies	N-Channel 30 V (D-S) MOSFET with Schottky Diode	4407	15000:$0.5362 6000:$0.5393 3000:$0.5423 1000:$0.5453 500:$0.7157 250:$0.8333 100:$0.8607 50:$0.9001 25:$1.0001 12:$1.1112
SIRC18DP-T1-GE3 DISTI # SIRC18DP-T1-GE3	Vishay Intertechnologies	TrenchFET Gen IV Power MOSFET N-Channel with Schottky Diode 30V VDS +20V -16V VGS 60A ID8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SIRC18DP-T1-GE3) Min Qty: 6000 Container: Reel	Americas - 0	60000:$0.5009 30000:$0.5149 18000:$0.5299 12000:$0.5519 6000:$0.5689
SIRC18DP-T1-GE3 DISTI # 59AC7428	Vishay Intertechnologies	N-CHANNEL 30-V (D-S) MOSFET W/SCHOTT	0	10000:$0.4980 6000:$0.5090 4000:$0.5290 2000:$0.5880 1000:$0.6460 1:$0.6740
SIRC18DP-T1-GE3 DISTI # 78-SIRC18DP-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	8359	1:$1.3600 10:$1.1200 100:$0.8650 500:$0.7430 1000:$0.5870 3000:$0.5480 6000:$0.5200 9000:$0.5010
SIRC18DP-T1-GE3 DISTI # 2846632	Vishay Intertechnologies	MOSFET, N-CH, 30V, 60A, POWERPAK SO RoHS: Compliant	48	1000:$0.9580 500:$1.2200 100:$1.4700 5:$1.8900
SIRC18DP-T1-GE3 DISTI # 2846632	Vishay Intertechnologies	MOSFET, N-CH, 30V, 60A, POWERPAK SO	48	500:£0.5680 250:£0.6150 100:£0.6610 10:£0.9100 1:£1.1900