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IRF5801TRPBF

IRF5801TRPBF
Mfr. #:
IRF5801TRPBF
製造商:
Infineon / IR
描述:
MOSFET MOSFT 200V 0.6A 2200mOhm 3.9nC
生命週期:
製造商新產品
數據表:
IRF5801TRPBF 數據表
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HTML Datasheet:
IRF5801TRPBF DatasheetIRF5801TRPBF Datasheet (P4-P6)IRF5801TRPBF Datasheet (P7-P8)
ECAD Model:
更多信息:
IRF5801TRPBF 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TSOP-6
通道數：
1 Channel
晶體管極性：
N通道
Vds - 漏源擊穿電壓：
200 V
Id - 連續漏極電流：
600 mA
Rds On - 漏源電阻：
2.2 Ohms
Vgs - 柵源電壓：
30 V
Qg - 門電荷：
3.9 nC
最低工作溫度：
- 55 C
最高工作溫度：
+ 150 C
Pd - 功耗：
2 W
配置：
單身的
頻道模式：
增強
打包：
捲軸
高度：
1.1 mm
長度：
3 mm
晶體管類型：
1 N-Channel
寬度：
1.5 mm
品牌：
英飛凌/紅外
正向跨導 - 最小值：
0.44 S
秋季時間：
19 ns
產品類別：
MOSFET
上升時間：
8 ns
出廠包裝數量：
3000
子類別：
MOSFET
典型關斷延遲時間：
8.8 ns
典型的開啟延遲時間：
6.5 ns
第 # 部分別名：
SP001570104
單位重量：
0.000705 oz
Tags
IRF580, IRF58, IRF5, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 2.2 Ohms;ID 0.6A;TSOP-6;PD 2W;VGS +/-30V
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package, TSOP6L, RoHS
***ure Electronics
Single N-Channel 200 V 2.2 Ohm 3.9 nC HEXFET® Power Mosfet - SC-74
***et
Trans MOSFET N-CH 200V 0.6A 6-Pin TSOP T/R
***ment14 APAC
MOSFET, N, 200V, TSOP-6; Transistor Polarity:N Channel; Continuous Drain Current Id:600mA; Drain Source Voltage Vds:200V; On Resistance Rds(on):2.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Application Code:SMPS; Cont Current Id @ 25°C:600mA; Cont Current Id @ 70°C:0.48; Current Id Max:600mA; Junction to Case Thermal Resistance A:62.5°C/W; Package / Case:TSOP; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:4.8A; Termination Type:SMD; Voltage Vds:200V; Voltage Vds Typ:200V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design | Target Applications: DC Switches; Load Switch
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
型號 製造商 描述 庫存 價格
IRF5801TRPBF
DISTI # V72:2272_13889621		Infineon Technologies AGTrans MOSFET N-CH 200V 0.6A 6-Pin TSOP T/R
RoHS: Compliant		261
  • 250:$0.1618
  • 100:$0.2184
  • 25:$0.3620
  • 10:$0.3658
  • 1:$0.4465
IRF5801TRPBF
DISTI # IRF5801TRPBFCT-ND		Infineon Technologies AGMOSFET N-CH 200V 600MA 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		432In Stock
  • 1000:$0.2071
  • 500:$0.2680
  • 100:$0.3654
  • 10:$0.4870
  • 1:$0.5800
IRF5801TRPBF
DISTI # IRF5801TRPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 200V 600MA 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		432In Stock
  • 1000:$0.2071
  • 500:$0.2680
  • 100:$0.3654
  • 10:$0.4870
  • 1:$0.5800
IRF5801TRPBF
DISTI # IRF5801TRPBFTR-ND		Infineon Technologies AGMOSFET N-CH 200V 600MA 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.1833
IRF5801TRPBF
DISTI # 31222876		Infineon Technologies AGTrans MOSFET N-CH 200V 0.6A 6-Pin TSOP T/R
RoHS: Compliant		9000
  • 30000:$0.1045
  • 18000:$0.1065
  • 12000:$0.1103
  • 6000:$0.1141
  • 3000:$0.1180
IRF5801TRPBF
DISTI # 26196127		Infineon Technologies AGTrans MOSFET N-CH 200V 0.6A 6-Pin TSOP T/R
RoHS: Compliant		261
  • 250:$0.1622
  • 100:$0.2184
  • 58:$0.3620
IRF5801TRPBF
DISTI # IRF5801TRPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 0.6A 6-Pin TSOP T/R - Tape and Reel (Alt: IRF5801TRPBF)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.1229
  • 6000:$0.1189
  • 12000:$0.1149
  • 18000:$0.1109
  • 30000:$0.1089
IRF5801TRPBF
DISTI # IRF5801TRPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 0.6A 6-Pin TSOP T/R (Alt: IRF5801TRPBF)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
  • 3000:$0.1071
  • 6000:$0.1042
  • 9000:$0.1013
  • 15000:$0.0987
  • 30000:$0.0974
  • 75000:$0.0961
  • 150000:$0.0949
IRF5801TRPBF
DISTI # 25M9806		Infineon Technologies AGMOSFET Transistor, N Channel, 600 mA, 200 V, 2.2 ohm, 10 V, 5.5 V RoHS Compliant: Yes0
  • 1:$0.4700
  • 10:$0.3890
  • 25:$0.3380
  • 50:$0.2880
  • 100:$0.2370
  • 250:$0.2190
  • 500:$0.2010
  • 1000:$0.1830
IRF5801TRPBF
DISTI # 70017676		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 200V,RDS(ON) 2.2 Ohms,ID 0.6A,TSOP-6,PD 2W,VGS +/-30V
RoHS: Compliant		0
  • 10:$0.3400
IRF5801TRPBFInfineon Technologies AGSingle N-Channel 200 V 2.2 Ohm 3.9 nC HEXFET Power Mosfet - SC-74
RoHS: Compliant		6000Reel
  • 3000:$0.1280
  • 6000:$0.1240
IRF5801TRPBF
DISTI # 942-IRF5801TRPBF		Infineon Technologies AGMOSFET MOSFT 200V 0.6A 2200mOhm 3.9nC
RoHS: Compliant		6848
  • 1:$0.4700
  • 10:$0.3890
  • 100:$0.2370
  • 1000:$0.1830
  • 3000:$0.1560
IRF5801TRPBF
DISTI # 301631P		Infineon Technologies AGMOSFET N-CHANNEL 200V 0.6A TSOP6, RL6760
  • 30:£0.1780
  • 150:£0.1360
  • 750:£0.1200
  • 1500:£0.1080
IRF5801TRPBF
DISTI # 1298504		Infineon Technologies AGMOSFET, N, 200V, TSOP-6
RoHS: Compliant		2712
  • 5:£0.3070
  • 25:£0.1820
  • 100:£0.1390
  • 250:£0.1310
  • 500:£0.1220
IRF5801TRPBF
DISTI # 1298504		Infineon Technologies AGMOSFET, N, 200V, TSOP-6
RoHS: Compliant		0
  • 1:$0.7440
  • 10:$0.6160
  • 100:$0.3750
  • 1000:$0.2900
  • 3000:$0.2470
IRF5801TRPBF
DISTI # 1298504RL		Infineon Technologies AGMOSFET, N, 200V, TSOP-6
RoHS: Compliant		0
  • 1:$0.7440
  • 10:$0.6160
  • 100:$0.3750
  • 1000:$0.2900
  • 3000:$0.2470
IRF5801TRPBF
DISTI # C1S322000481028		Infineon Technologies AGTrans MOSFET N-CH 200V 0.6A 6-Pin TSOP T/R
RoHS: Compliant		9000
  • 6000:$0.1680
  • 3000:$0.1810
IRF5801TRPBF
DISTI # C1S327400943062		Infineon Technologies AGTrans MOSFET N-CH 200V 0.6A 6-Pin TSOP T/R
RoHS: Compliant		12118
  • 100:$0.2250
  • 50:$0.2750
  • 10:$0.4130
IRF5801TRPBF
DISTI # C1S322000481019		Infineon Technologies AGTrans MOSFET N-CH 200V 0.6A 6-Pin TSOP T/R
RoHS: Compliant		261
  • 250:$0.1618
  • 100:$0.2184
  • 25:$0.3620
  • 10:$0.3658
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Mfr.#: LTV-817S

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Mfr.#: SN74LVC1G08QDCKRQ1

OMO.#: OMO-SN74LVC1G08QDCKRQ1

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Mfr.#: LTC6993HS6-3#TRMPBF

OMO.#: OMO-LTC6993HS6-3-TRMPBF

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Mfr.#: 43045-0200

OMO.#: OMO-43045-0200-410

 Headers & Wire Housings 2 CKT R/A HEADER
43045-0600

Mfr.#: 43045-0600

OMO.#: OMO-43045-0600-410

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RC0402JR-13330RL

Mfr.#: RC0402JR-13330RL

OMO.#: OMO-RC0402JR-13330RL-433

 Res Thick Film 0402 330 Ohm 5% 0.063W(1/16W) ±100ppm/C Molded SMD Paper T/R
LTV-817S

Mfr.#: LTV-817S

OMO.#: OMO-LTV-817S-LITE-ON

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OMO.#: OMO-SN74LVC1G08QDCKRQ1-TEXAS-INSTRUMENTS

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AFK477M35H32T-F

Mfr.#: AFK477M35H32T-F

OMO.#: OMO-AFK477M35H32T-F-CORNELL-DUBILIER-ELECTRONICS

 Aluminum Electrolytic Capacitors - SMD 35V 470uF 12.5X13.5
可用性
庫存:
Available
訂購:
1993
輸入數量:
IRF5801TRPBF的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
參考價格（美元）
數量
單價
小計金額
1
US$0.46
US$0.46
10
US$0.39
US$3.89
100
US$0.24
US$23.70
1000
US$0.18
US$183.00
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