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IPB60R040C7ATMA1

IPB60R040C7ATMA1
Mfr. #:
IPB60R040C7ATMA1
製造商:
Infineon Technologies
描述:
MOSFET HIGH POWER_NEW
生命週期:
製造商新產品
數據表:
IPB60R040C7ATMA1 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
IPB60R040C7ATMA1 更多信息
產品屬性
屬性值
製造商：
英飛凌
產品分類：
MOSFET
RoHS：
Y
技術：
矽
安裝方式：
貼片/貼片
包裝/案例：
TO-263-3
Vds - 漏源擊穿電壓：
600 V
商品名：
酷摩
打包：
捲軸
高度：
4.4 mm
長度：
10 mm
系列：
CoolMOS C7
寬度：
9.25 mm
品牌：
英飛凌科技
產品類別：
MOSFET
出廠包裝數量：
1000
子類別：
MOSFET
第 # 部分別名：
IPB60R040C7 SP001277610
單位重量：
0.139332 oz
Tags
IPB60R040, IPB60R04, IPB60R0, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IPB60R040 Series N-Channel 650 V 50 A Surface Mount Power MosFet - PG-TO263-3
***ark
Mosfet, N-Ch, 600V, 50A, 150Deg C, 227W; Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:50A; On Resistance Rds(On):0.034Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ineon
The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
型號 製造商 描述 庫存 價格
IPB60R040C7ATMA1
DISTI # 31022491		Infineon Technologies AGTrans MOSFET N-CH 600V 37.9A 3-Pin(2+Tab) D2PAK1000
  • 1000:$5.7792
IPB60R040C7ATMA1
DISTI # IPB60R040C7ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 650V 50A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 1000:$7.2169
IPB60R040C7ATMA1
DISTI # IPB60R040C7ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 650V 50A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 500:$7.9841
  • 100:$9.3607
  • 10:$11.0130
  • 1:$12.1100
IPB60R040C7ATMA1
DISTI # IPB60R040C7ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 650V 50A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 500:$7.9841
  • 100:$9.3607
  • 10:$11.0130
  • 1:$12.1100
IPB60R040C7ATMA1
DISTI # V36:1790_13989133		Infineon Technologies AGTrans MOSFET N-CH 600V 37.9A 3-Pin(2+Tab) D2PAK0
    IPB60R040C7ATMA1
    DISTI # SP001277610    		Infineon Technologies AGTrans MOSFET N 650V 50A 3-Pin TO-263 T/R (Alt: SP001277610)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel    		Europe - 1000
    • 1000:€6.6900
    • 2000:€6.3900
    • 4000:€6.1900
    • 6000:€5.6900
    • 10000:€5.2900
    IPB60R040C7ATMA1
    DISTI # IPB60R040C7ATMA1    		Infineon Technologies AGTrans MOSFET N 650V 50A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB60R040C7ATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 1000:$6.9900
    • 2000:$6.6900
    • 4000:$6.4900
    • 6000:$6.1900
    • 10000:$6.0900
    IPB60R040C7ATMA1
    DISTI # IPB60R040C7    		Infineon Technologies AGTrans MOSFET N 650V 50A 3-Pin TO-263 T/R (Alt: IPB60R040C7)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel    		Asia - 0
    • 1000:$6.9427
    • 2000:$6.7499
    • 3000:$6.5674
    • 5000:$6.3946
    • 10000:$6.3116
    • 25000:$6.2306
    • 50000:$6.1518
    IPB60R040C7ATMA1
    DISTI # 93AC7103    		Infineon Technologies AGMOSFET, N-CH, 600V, 50A, 227W, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.034ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes736
    • 500:$6.0200
    • 250:$6.6100
    • 100:$6.9200
    • 50:$7.4400
    • 25:$7.9700
    • 10:$8.3600
    • 1:$9.2500
    IPB60R040C7ATMA1
    DISTI # 726-IPB60R040C7ATMA1    		Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant    		0
    • 1:$11.5600
    • 10:$10.4500
    • 25:$9.9600
    • 100:$8.6500
    • 250:$8.2600
    • 500:$7.5300
    • 1000:$6.5600
    IPB60R040C7ATMA1
    DISTI # 2986461    		Infineon Technologies AGMOSFET, N-CH, 600V, 50A, 227W, TO-263
    RoHS: Compliant    		811
    • 10:£8.6100
    • 5:£10.0000
    • 1:£10.6200
    IPB60R040C7ATMA1
    DISTI # XSKDRABS0006507    		Infineon Technologies AG"PowerField-EffectTransistor,180AI(D),40V,0.0011ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET"
    RoHS: Compliant    		3000 in Stock0 on Order
    • 3000:$9.0480
    • 1000:$9.6840
    IPB60R040C7ATMA1
    DISTI # 2986461    		Infineon Technologies AGMOSFET, N-CH, 600V, 50A, 227W, TO-263
    RoHS: Compliant    		736
    • 100:$9.9900
    • 50:$10.6689
    • 25:$11.8950
    • 10:$13.1943
    • 5:$13.7067
    • 1:$14.2374
    圖片 型號 描述
    IPB60R045P7ATMA1

    Mfr.#: IPB60R045P7ATMA1

    OMO.#: OMO-IPB60R045P7ATMA1

    		 MOSFET
    IPB60R040CFD7ATMA1

    Mfr.#: IPB60R040CFD7ATMA1

    OMO.#: OMO-IPB60R040CFD7ATMA1

    		 MOSFET
    IPB60R040C7ATMA1

    Mfr.#: IPB60R040C7ATMA1

    OMO.#: OMO-IPB60R040C7ATMA1

    		 MOSFET HIGH POWER_NEW
    IPB60R040C7ATMA1

    Mfr.#: IPB60R040C7ATMA1

    OMO.#: OMO-IPB60R040C7ATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 650V 50A TO263-3
    IPB60R040C7 NPI

    Mfr.#: IPB60R040C7 NPI

    OMO.#: OMO-IPB60R040C7-NPI-1190

    		 N-CH 600V 50A 40mOhm D2PAK
    可用性
    庫存:
    Available
    訂購:
    2500
    輸入數量:
    IPB60R040C7ATMA1的當前價格僅供參考，如果您想獲得最優惠的價格，請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
    參考價格（美元）
    數量
    單價
    小計金額
    1
    US$11.56
    US$11.56
    10
    US$10.45
    US$104.50
    25
    US$9.96
    US$249.00
    100
    US$8.65
    US$865.00
    250
    US$8.26
    US$2 065.00
    500
    US$7.53
    US$3 765.00
    由於2021年半導體供不應求，低於2021年之前的正常價格，請發詢價確認。
    從...開始
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