IPD30N03S4L09ATMA1

Mfr. #:: IPD30N03S4L09ATMA1
製造商:: Infineon Technologies
描述:: MOSFET N-CH 30V 30A TO252-3
生命週期:: 製造商新產品
數據表:: IPD30N03S4L09ATMA1 數據表
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ECAD Model:

產品屬性
屬性值

Tags: IPD30N03S4, IPD30N03, IPD30N0, IPD30N, IPD30, IPD3, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD30N03S4L09ATMA1 描述

***Components: In a Pack of 50, N-Channel MOSFET, 30 A, 30 V, 3-Pin DPAK Infineon IPD30N03S4L09ATMA1

***p One Stop Japan: Trans MOSFET N-CH 30V 30A Automotive 3-Pin(2+Tab) DPAK T/R

***et Europe: Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252

***ronik: MOSFET 30V 9.0mOHM AECQ TO252

***ark: MOSFET, N-CH, 30V, 30A, TO-252-3

***i-Key: MOSFET N-CH 30V 30A TO252-3

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 30V, 30A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0073ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:42W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET CANALE N 30V 30A TO-252-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:30A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0073ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.5V; Dissipazione di Potenza Pd:42W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Package (RoHS compliant); 100% Avalanche tested | Benefits: Low switching and conduction power losses for highest thermal efficiency; Robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T 40V addresses to small loads control switching (3-phase and H-bridge motors, electric pumps, etc. especially in combination with PWM control).; Body applications

Market price

型號	製造商	描述	庫存	價格
IPD30N03S4L09ATMA1 DISTI # V72:2272_06391066	Infineon Technologies AG	Trans MOSFET N-CH 30V 30A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2345	1000:$0.3122 500:$0.3469 250:$0.3855 100:$0.5263 25:$0.6665 10:$0.8146 1:$0.8723
IPD30N03S4L09ATMA1 DISTI # V36:1790_06391066	Infineon Technologies AG	Trans MOSFET N-CH 30V 30A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	0
IPD30N03S4L09ATMA1 DISTI # IPD30N03S4L09ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 30A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	101443In Stock	1000:$0.3722 500:$0.4653 100:$0.5885 10:$0.7680 1:$0.8700
IPD30N03S4L09ATMA1 DISTI # IPD30N03S4L09ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 30A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	101443In Stock	1000:$0.3722 500:$0.4653 100:$0.5885 10:$0.7680 1:$0.8700
IPD30N03S4L09ATMA1 DISTI # IPD30N03S4L09ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 30A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	100000In Stock	12500:$0.3011 5000:$0.3049 2500:$0.3275
IPD30N03S4L09ATMA1 DISTI # 31440690	Infineon Technologies AG	Trans MOSFET N-CH 30V 30A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2345	1000:$0.3122 500:$0.3469 250:$0.3855 100:$0.5263 25:$0.6665 24:$0.8146
IPD30N03S4L09ATMA1 DISTI # IPD30N03S4L09ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD30N03S4L09ATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 2500	25000:$0.2649 15000:$0.2719 10000:$0.2789 5000:$0.2859 2500:$0.2939
IPD30N03S4L09ATMA1 DISTI # IPD30N03S4L09ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252 - Bulk (Alt: IPD30N03S4L09ATMA1) Min Qty: 1316 Container: Bulk	Americas - 0	13160:$0.2409 6580:$0.2449 3948:$0.2539 2632:$0.2629 1316:$0.2729
IPD30N03S4L09ATMA1 DISTI # 50Y2030	Infineon Technologies AG	MOSFET Transistor, N Channel, 30 A, 30 V, 0.0073 ohm, 10 V, 1.5 V RoHS Compliant: Yes	0	1000:$0.3480 500:$0.3770 250:$0.4060 100:$0.4350 50:$0.5150 25:$0.5940 10:$0.6740 1:$0.8080
IPD30N03S4L-09 DISTI # 726-IPD30N03S4L09	Infineon Technologies AG	MOSFET N-Ch 30V 30A DPAK-2 OptiMOS-T2 RoHS: Compliant	10855	1:$0.8000 10:$0.6670 100:$0.4310 1000:$0.3450 2500:$0.2910 10000:$0.2800 25000:$0.2690
IPD30N03S4L09ATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 30A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant	1844	1000:$0.2500 500:$0.2600 100:$0.2700 25:$0.2900 1:$0.3100
IPD30N03S4L09ATMA1 DISTI # 8269522P	Infineon Technologies AG	MOSFET N-CH 30A 30V OPTIMOS-T2 TO252, RL	1150	1000:£0.2280 500:£0.2650 250:£0.2740 100:£0.2830
IPD30N03S4L09ATMA1 DISTI # 2480825RL	Infineon Technologies AG	MOSFET, N-CH, 30V, 30A, TO-252-3 RoHS: Compliant	0	10000:$0.4310 2500:$0.4480 1000:$0.5310 100:$0.6630 10:$1.0400 1:$1.2400
IPD30N03S4L09ATMA1 DISTI # 2480825	Infineon Technologies AG	MOSFET, N-CH, 30V, 30A, TO-252-3 RoHS: Compliant	599	10000:$0.4310 2500:$0.4480 1000:$0.5310 100:$0.6630 10:$1.0400 1:$1.2400
IPD30N03S4L09ATMA1 DISTI # 2480825	Infineon Technologies AG	MOSFET, N-CH, 30V, 30A, TO-252-3	594	500:£0.3810 250:£0.4470 100:£0.5130 25:£0.6670 5:£0.7430

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