IRFS4010TRLPBF

IRFS4010TRLPBF
Mfr. #:
IRFS4010TRLPBF
製造商:
Infineon / IR
描述:
MOSFET MOSFT 100V 180A 4.7mOhm 143nC Qg
生命週期:
製造商新產品
數據表:
IRFS4010TRLPBF 數據表
交貨:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
IRFS4010TRLPBF DatasheetIRFS4010TRLPBF Datasheet (P4-P6)IRFS4010TRLPBF Datasheet (P7-P9)IRFS4010TRLPBF Datasheet (P10)
ECAD Model:
產品屬性
屬性值
製造商:
英飛凌
產品分類:
MOSFET
RoHS:
Y
技術:
安裝方式:
貼片/貼片
包裝/案例:
TO-252-3
通道數:
1 Channel
晶體管極性:
N通道
Vds - 漏源擊穿電壓:
100 V
Id - 連續漏極電流:
180 A
Rds On - 漏源電阻:
3.9 mOhms
Vgs th - 柵源閾值電壓:
4 V
Vgs - 柵源電壓:
20 V
Qg - 門電荷:
143 nC
最低工作溫度:
- 55 C
最高工作溫度:
+ 175 C
Pd - 功耗:
375 W
配置:
單身的
打包:
捲軸
高度:
2.3 mm
長度:
6.5 mm
晶體管類型:
1 N-Channel
寬度:
6.22 mm
品牌:
英飛凌/紅外
正向跨導 - 最小值:
189 S
秋季時間:
77 ns
產品類別:
MOSFET
上升時間:
86 ns
出廠包裝數量:
800
子類別:
MOSFET
典型關斷延遲時間:
100 ns
典型的開啟延遲時間:
21 ns
第 # 部分別名:
SP001550124
單位重量:
0.139332 oz
Tags
IRFS4010TRLP, IRFS4010TRL, IRFS4010T, IRFS401, IRFS40, IRFS4, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***-Tronics LLC (USA)
Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 180A D2PAK
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 100 V 4.7 mOhm 143 nC HEXFET® Power Mosfet - D2PAK
***Yang
Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R - Product that comes on tape, but is not reeled (
***ment14 APAC
MOSFET, N-CH, 100V, 180A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Source Voltage Vds:100V; On Resistance
***roFlash
Power Field-Effect Transistor, 180A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N-CH, 100V, 180A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0039ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***(Formerly Allied Electronics)
AUIRFS4010 N-channel MOSFET Transistor; 180 A; 100 V; 3-Pin D2PAK
***ical
Trans MOSFET N-CH Si 100V 180A Automotive 3-Pin(2+Tab) D2PAK Tube
***ernational Rectifier
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-PAK Package
***ment14 APAC
MOSFET, N-CH, 100V, 180A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***ineon SCT
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS
***ineon
Benefits: Advanced Process Technology; Ultra Low On-Resistance; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***et
Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK Tube
***(Formerly Allied Electronics)
MOSFET, 100V, 180A, 4.7MOHM, 143NC QG, D2PAK
***ment14 APAC
MOSFET, N-CH, 100V, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):3.9mohm; Rds(on) Test Voltage Vgs:20V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:9575pF; Current Id Max:180A; Package / Case:D2-PAK; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Pulse Current Idm:720A; Reverse Recovery Time trr Typ:72ns; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
***ure Electronics
FDB035N10 Series 100 V 214 A 3.5 mOhm N-Channel SuperFET® MOSFET - D2PAK-3
***Yang
Trans MOSFET N-CH 100V 214A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***emi
N-Channel PowerTrench® MOSFET 100V, 214A, 3.5mΩ
***hard Electronics
N CH MOSFET, POWERTRENCH, 100V, 120A, D2PAK - More Details
***ment14 APAC
MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:214A; Source Voltage Vds:100V; On Resistance
***r Electronics
Power Field-Effect Transistor, 120A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 214A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.003ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 333W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
*** Source Electronics
Trans MOSFET N-CH Si 100V 190A Automotive 7-Pin(6+Tab) D2PAK T/R / HEXFETPower MOSFET
***ernational Rectifier
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package
***el Electronic
Power Field-Effect Transistor, 190A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7
型號 製造商 描述 庫存 價格
IRFS4010TRLPBF
DISTI # 26992941
Infineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
800
  • 800:$1.6276
IRFS4010TRLPBF
DISTI # 31234198
Infineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
100
  • 100:$3.5063
  • 50:$4.0927
  • 10:$4.8450
  • 6:$4.9088
IRFS4010TRLPBF
DISTI # IRFS4010TRLPBFCT-ND
Infineon Technologies AGMOSFET N-CH 100V 180A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5163In Stock
  • 100:$3.4782
  • 10:$4.2420
  • 1:$4.7500
IRFS4010TRLPBF
DISTI # IRFS4010TRLPBFDKR-ND
Infineon Technologies AGMOSFET N-CH 100V 180A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5163In Stock
  • 100:$3.4782
  • 10:$4.2420
  • 1:$4.7500
IRFS4010TRLPBF
DISTI # IRFS4010TRLPBFTR-ND
Infineon Technologies AGMOSFET N-CH 100V 180A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
3200In Stock
  • 800:$2.4709
IRFS4010TRLPBF
DISTI # C1S322000495207
Infineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
100
  • 100:$2.7500
  • 50:$3.2100
  • 10:$3.8000
  • 1:$3.8500
IRFS4010TRLPBF
DISTI # IRFS4010TRLPBF
Infineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R - Cut TR (SOS) (Alt: IRFS4010TRLPBF)
RoHS: Compliant
Min Qty: 1
Container: Cut Tape
Americas - 21
  • 1:$2.8900
  • 8:$2.8900
  • 20:$2.8900
  • 40:$2.8900
  • 100:$2.7900
  • 200:$2.6900
  • 400:$2.3900
IRFS4010TRLPBF
DISTI # IRFS4010TRLPBF
Infineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFS4010TRLPBF)
RoHS: Compliant
Min Qty: 800
Container: Reel
Americas - 32000
  • 800:$1.6900
  • 1600:$1.5900
  • 3200:$1.5900
  • 4800:$1.4900
  • 8000:$1.4900
IRFS4010TRLPBF
DISTI # IRFS4010TRLPBF
Infineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R (Alt: IRFS4010TRLPBF)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel
Asia - 0
    IRFS4010TRLPBFInfineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
    RoHS: Compliant
    Container: Reel
    Americas - 0
      IRFS4010TRLPBF
      DISTI # 13AC9154
      Infineon Technologies AGMOSFET, N-CH, 100V, 180A, TO-263AB,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0039ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes145
      • 1:$3.9700
      • 10:$3.3700
      • 25:$3.2200
      • 50:$3.0800
      • 100:$2.9300
      • 250:$2.7800
      • 500:$2.4900
      IRFS4010TRLPBF.
      DISTI # 26AC0562
      Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0039ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:375W,No. of Pins:3Pins RoHS Compliant: Yes0
      • 1:$2.0900
      • 1600:$1.9900
      • 3200:$1.8900
      • 8000:$1.7900
      IRFS4010TRLPBF
      DISTI # 70019745
      Infineon Technologies AGMOSFET,100V,180A,4.7 MOHM,143 NC QG,D2-PAK
      RoHS: Compliant
      0
      • 2:$5.7800
      IRFS4010TRLPBF
      DISTI # 942-IRFS4010TRLPBF
      Infineon Technologies AGMOSFET MOSFT 100V 180A 4.7mOhm 143nC Qg
      RoHS: Compliant
      3485
      • 1:$3.9700
      • 10:$3.3700
      • 100:$2.9300
      • 250:$2.7800
      • 500:$2.4900
      IRFS4010TRLPBF
      DISTI # 1300999P
      Infineon Technologies AGMOSFET HEXFET N-CH 100V 180A D2PAK, RL914
      • 10:£2.2100
      • 100:£1.8950
      • 500:£1.5100
      • 1000:£1.4550
      IRFS4010TRLPBF
      DISTI # 2725983
      Infineon Technologies AGMOSFET, N-CH, 100V, 180A, TO-263AB
      RoHS: Compliant
      210
      • 1:£2.7000
      • 10:£2.2500
      • 100:£1.9400
      • 250:£1.8100
      • 500:£1.6900
      IRFS4010TRLPBF
      DISTI # 2725983
      Infineon Technologies AGMOSFET, N-CH, 100V, 180A, TO-263AB
      RoHS: Compliant
      295
      • 1:$7.5800
      • 10:$6.7700
      • 100:$5.5500
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      C1608X5R0J226M080AC

      Mfr.#: C1608X5R0J226M080AC

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      Mfr.#: RC0603FR-07100KL

      OMO.#: OMO-RC0603FR-07100KL-YAGEO

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      可用性
      庫存:
      Available
      訂購:
      1986
      輸入數量:
      IRFS4010TRLPBF的當前價格僅供參考,如果您想獲得最優惠的價格,請提交查詢或直接發送電子郵件至我們的銷售團隊[email protected]
      參考價格(美元)
      數量
      單價
      小計金額
      1
      US$2.97
      US$2.97
      10
      US$2.53
      US$25.30
      100
      US$2.19
      US$219.00
      250
      US$2.08
      US$520.00
      500
      US$1.86
      US$930.00
      由於2021年半導體供不應求,低於2021年之前的正常價格,請發詢價確認。
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