SIHB180N60E-GE3

Mfr. #:: SIHB180N60E-GE3
製造商:: Vishay / Siliconix
描述:: MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
生命週期:: 製造商新產品
數據表:: SIHB180N60E-GE3 數據表
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更多信息:: SIHB180N60E-GE3 更多信息

產品屬性
屬性值

製造商：: 威世

產品分類：: MOSFET

RoHS：: Y

技術：: 矽

安裝方式：: 貼片/貼片

包裝/案例：: TO-263

通道數：: 1 Channel

晶體管極性：: N通道

Vds - 漏源擊穿電壓：: 600 V

Id - 連續漏極電流：: 19 A

Rds On - 漏源電阻：: 180 mOhms

Vgs th - 柵源閾值電壓：: 3 V

Vgs - 柵源電壓：: 30 V

Qg - 門電荷：: 33 nC

最低工作溫度：: - 55 C

最高工作溫度：: + 150 C

Pd - 功耗：: 156 W

配置：: 單身的

頻道模式：: 增強

系列：: E

晶體管類型：: 1 N-Channel E-Series Power MOSFET

品牌：: 威世 / Siliconix

正向跨導 - 最小值：: 5.3 S

秋季時間：: 23 ns

產品類別：: MOSFET

上升時間：: 49 ns

出廠包裝數量：: 1

子類別：: MOSFET

典型關斷延遲時間：: 22 ns

典型的開啟延遲時間：: 14 ns

Tags: SIHB1, SIHB, SIH

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHB180N60E-GE3 更多信息

4th Gen E Series MOSFETs: Vishay Semiconductors 4th Gen E Series MOSFETs are low Figure-Of-Merit (FOM) MOSFETs with E series technology. The 4th Gen E series MOSFETs feature low effective capacitance and reduced switching and conduction losses. These MOSFETs are avalanche energy rated (UIS). The 4th Gen MOSFETs are available in TO-220AB, PowerPAK® SO-8L, PowerPAK® 8 x 8, DPAK (TO-252), and Thin-Lead TO-220 FULLPAK packages. Typical applications include server and telecom power supplies, lighting, industrial, Switch Mode Power Supplies (SMPS), and Power Factor Correction (PFC) power supplies.

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

型號	製造商	描述	庫存	價格
SIHB180N60E-GE3 DISTI # V99:2348_22712077	Vishay Intertechnologies	E Series Power MOSFET D2PAK (TO-263), 180 m @ 10V	996	5000:$1.5870 2500:$1.6139 1000:$1.6990 500:$1.9150 250:$2.2040 100:$2.2720 10:$2.8430 1:$3.1980
SIHB180N60E-GE3 DISTI # SIHB180N60E-GE3-ND	Vishay Siliconix	MOSFET N-CH D2PAK TO-263 Min Qty: 1 Container: Bulk	1020In Stock	2500:$1.6159 1000:$1.7010 500:$2.0169 100:$2.3693 10:$2.8920 1:$3.2200
SIHB180N60E-GE3 DISTI # 33629188	Vishay Intertechnologies	E Series Power MOSFET D2PAK (TO-263), 180 m @ 10V	996	5000:$1.5870 2500:$1.6139 1000:$1.6990 500:$1.9150 250:$2.2040 100:$2.2720 10:$2.8430 4:$3.1980
SIHB180N60E-GE3 DISTI # SIHB180N60E-GE3	Vishay Intertechnologies	(Alt: SIHB180N60E-GE3) Min Qty: 1	Europe - 0	1000:€1.4048 500:€1.4423 100:€1.4798 50:€1.5547 25:€1.6483 10:€1.7420 1:€1.8731
SIHB180N60E-GE3 DISTI # SIHB180N60E-GE3	Vishay Intertechnologies	- Tape and Reel (Alt: SIHB180N60E-GE3) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$1.5577 6000:$1.6008 4000:$1.6463 2000:$1.7161 1000:$1.7686
SIHB180N60E-GE3 DISTI # 99AC9552	Vishay Intertechnologies	MOSFET, N-CH, 19A, 600V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:19A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power DissipationRoHS Compliant: Yes RoHS: Compliant	24	500:$2.0100 250:$2.2400 100:$2.3200 50:$2.4900 25:$2.6500 10:$2.8200 1:$3.4000
SIHB180N60E-GE3 DISTI # 78-SIHB180N60E-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant	964	1:$3.3800 10:$2.9000 100:$2.2900 250:$2.2300 500:$1.9700 1000:$1.7300 2500:$1.6400 5000:$1.5800
SIHB180N60E-GE3 DISTI # 3019077	Vishay Intertechnologies	MOSFET, N-CH, 19A, 600V, TO-263 RoHS: Compliant	24	5000:$2.4500 2500:$2.5400 1000:$2.6800 500:$3.1700 100:$3.7300 10:$4.5500 1:$5.0600
SIHB180N60E-GE3 DISTI # 3019077RL	Vishay Intertechnologies	MOSFET, N-CH, 19A, 600V, TO-263 RoHS: Compliant	0	1000:£1.3400 500:£1.6800 250:£1.8600 100:£1.9400 10:£2.3400 1:£3.1800
SIHB180N60E-GE3 DISTI # 3019077	Vishay Intertechnologies	MOSFET, N-CH, 19A, 600V, TO-263 RoHS: Compliant	24	1000:£1.3400 500:£1.6800 250:£1.8600 100:£1.9400 10:£2.3400 1:£3.1800